ES2076030T3 - Procedimiento de programacion para memoria integrada, en particular para tarjeta de memoria. - Google Patents

Procedimiento de programacion para memoria integrada, en particular para tarjeta de memoria.

Info

Publication number
ES2076030T3
ES2076030T3 ES92907920T ES92907920T ES2076030T3 ES 2076030 T3 ES2076030 T3 ES 2076030T3 ES 92907920 T ES92907920 T ES 92907920T ES 92907920 T ES92907920 T ES 92907920T ES 2076030 T3 ES2076030 T3 ES 2076030T3
Authority
ES
Spain
Prior art keywords
memory
programming procedure
memory card
fuse
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92907920T
Other languages
English (en)
Inventor
Michel Berthozat
Paul Morgavi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gemplus SA
Original Assignee
Gemplus Card International SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gemplus Card International SA filed Critical Gemplus Card International SA
Application granted granted Critical
Publication of ES2076030T3 publication Critical patent/ES2076030T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Read Only Memory (AREA)
  • Storage Device Security (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

LA INVENCION CONCIERNE A LOS PROCESOS DE PROGRAMACION DE LAS MEMORIAS DEL TIPO CON PROTECCION POR FUSIBLE EN PARTICULAR DE LAS UTILIZADAS EN LAS TERJETAS "ELECTRONICAS". CONSISTE EN APLICAR LA TENSION DE PERFORACION DURANTE UNA DURACION (204) MUY SUPERIOR A LA CORRIENTEMENTE UTILIZADA Y EN LIMITAR LA CORRIENTE (206) A UN VALOR TAMBIEN MUY SUPERIOR AL HABITUAL, TIPICAMENTE, SE COGE 100 MS Y 2 A. UNOS MEDIOS INFORMATICOS PROGRAMABLES (102) PERMITEN REGULAR ESTOS VALORES Y PROCEDER A UNOS TESTS PREVIOS. PERMITE EVITAR LA RECONSTITUCION DEL FUSIBLE PERFORADO Y LOS ERRORES QUE SE DERIVAN.
ES92907920T 1991-03-14 1992-03-10 Procedimiento de programacion para memoria integrada, en particular para tarjeta de memoria. Expired - Lifetime ES2076030T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9103106A FR2674060B1 (fr) 1991-03-14 1991-03-14 Procede de programmation pour memoire integree, notamment pour carte a memoire.

Publications (1)

Publication Number Publication Date
ES2076030T3 true ES2076030T3 (es) 1995-10-16

Family

ID=9410732

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92907920T Expired - Lifetime ES2076030T3 (es) 1991-03-14 1992-03-10 Procedimiento de programacion para memoria integrada, en particular para tarjeta de memoria.

Country Status (8)

Country Link
US (1) US5544111A (es)
EP (1) EP0575480B1 (es)
JP (1) JP2741635B2 (es)
CA (1) CA2105857A1 (es)
DE (1) DE69202338T2 (es)
ES (1) ES2076030T3 (es)
FR (1) FR2674060B1 (es)
WO (1) WO1992016947A1 (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2669267B1 (fr) * 1990-11-16 1993-01-22 Supermag Machine de personnalisation pour cartes a puces.
FR2698222B1 (fr) * 1992-11-18 1994-12-16 Gemplus Card Int Procédé et circuit de claquage de fusible dans un circuit intégré.
US6486862B1 (en) 1996-10-31 2002-11-26 Kopin Corporation Card reader display system
US6909419B2 (en) 1997-10-31 2005-06-21 Kopin Corporation Portable microdisplay system
US6476784B2 (en) 1997-10-31 2002-11-05 Kopin Corporation Portable display system with memory card reader
US6552704B2 (en) 1997-10-31 2003-04-22 Kopin Corporation Color display with thin gap liquid crystal
US6442286B1 (en) * 1998-12-22 2002-08-27 Stmicroelectronics, Inc. High security flash memory and method
US6641050B2 (en) 2001-11-06 2003-11-04 International Business Machines Corporation Secure credit card
US7076663B2 (en) 2001-11-06 2006-07-11 International Business Machines Corporation Integrated system security method
DE10162308A1 (de) * 2001-12-19 2003-07-03 Philips Intellectual Property Verfahren und Anordnung zur Zugriffssteuerung auf EEPROMs sowie ein entsprechendes Computerprogrammprodukt und eine entsprechendes computerlesbares Speichermedium
USD486054S1 (en) 2002-08-05 2004-02-03 Masco Corporation Integral non-metallic electronic key
US8511558B2 (en) * 2005-04-12 2013-08-20 Sandisk Il Ltd. Smartcard power management
CN106156827B (zh) * 2016-07-29 2019-01-18 福州瑞芯微电子股份有限公司 一种芯片信息保护装置及方法
CN111158280B (zh) * 2019-12-26 2021-09-21 北京时代民芯科技有限公司 一种高精度模数转换器熔丝自动烧录系统及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3835458A (en) * 1973-12-03 1974-09-10 D Mrazek Die temperature controlled programming of ic memory device
DE2505186C3 (de) * 1974-02-15 1979-07-12 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Programmierbarer Lesespeicher
JPS524747A (en) * 1975-06-30 1977-01-14 Pilot Pen Co Ltd:The Memory element
JPS58133699A (ja) * 1982-02-02 1983-08-09 Omron Tateisi Electronics Co 固定デ−タ記憶カ−ド
US4480318A (en) * 1982-02-18 1984-10-30 Fairchild Camera & Instrument Corp. Method of programming of junction-programmable read-only memories
JPS60103594A (ja) * 1983-11-10 1985-06-07 Fujitsu Ltd 情報記憶回路
JPS60143500A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd プログラマブル半導体記憶装置
JPS61140000A (ja) * 1984-12-10 1986-06-27 Nec Corp プログラマブル読出し専用メモリ
JPH0734313B2 (ja) * 1985-08-09 1995-04-12 株式会社日立製作所 Ｉｃメモリ装置
US4937465A (en) * 1988-12-08 1990-06-26 Micron Technology, Inc. Semiconductor fuse blowing and verifying method and apparatus
US4933898A (en) * 1989-01-12 1990-06-12 General Instrument Corporation Secure integrated circuit chip with conductive shield
FR2649823B1 (fr) * 1989-07-13 1993-10-22 Gemplus Card International Fusible mos a claquage d'oxyde et son application aux cartes a memoire

Also Published As

Publication number Publication date
WO1992016947A1 (fr) 1992-10-01
US5544111A (en) 1996-08-06
DE69202338D1 (de) 1995-06-08
JPH06500195A (ja) 1994-01-06
FR2674060B1 (fr) 1993-05-28
DE69202338T2 (de) 1995-10-12
CA2105857A1 (fr) 1992-09-15
EP0575480A1 (fr) 1993-12-29
FR2674060A1 (fr) 1992-09-18
EP0575480B1 (fr) 1995-05-03
JP2741635B2 (ja) 1998-04-22

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