ES2094968T3 - Procedimiento para preparar un blindaje para reducir las particulas dentro de una camara de deposicion fisica por vapor. - Google Patents
Procedimiento para preparar un blindaje para reducir las particulas dentro de una camara de deposicion fisica por vapor.Info
- Publication number
- ES2094968T3 ES2094968T3 ES93109942T ES93109942T ES2094968T3 ES 2094968 T3 ES2094968 T3 ES 2094968T3 ES 93109942 T ES93109942 T ES 93109942T ES 93109942 T ES93109942 T ES 93109942T ES 2094968 T3 ES2094968 T3 ES 2094968T3
- Authority
- ES
- Spain
- Prior art keywords
- screen
- tightening ring
- deposition chamber
- tightening
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0007—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by explosions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
EN UN METODO PARA PREPARA UNA PANTALLA (17) Y/O ANILLO DE APRIETE (16) PREVIO AL USO EN UN PROCESO DE DEPOSICION DE VAPOR FISICO, LA PANTALLA (17) Y/O ANILLO DE APRIETE (16) SE INYECTA PRIMERO EN ESCORIA UTILIZANDO UN POLVO ABRASIVO, A CONTINUACION SE TRATA EN UNA CAMARA DE LIMPIEZA ULTRASONICA PARA ELIMINAR PARTICULAS SUELTAS Y DESPUES UN CHISPORROTEADO CON ACIDO O TRATATO CON UN PLASMA. EL CHISPORROTEO O EL TRATAMIENTO DE PLASMA SIRVE A SOLTAR CONTAMINACION QUE PUEDE FORMAR UNA BARRERA DE DIFUSION Y PREVENIR LOS DEPOSITOS A PARTIR DE EL ENLACE DE LA PANTALLA (17) Y TAMBIEN SIRVE PARA HACER ASPERA LA SUPERFICIE DE LA PANTALLA (17) Y/O EL ANILLO DE APRIETE (16), PARA REDUCIR LOS VACIOS DE INTERFASE Y MEJORAR LA ADHESION DE MATERIA CHISPORROTEADO SOBRE LA PANTALLA (17) Y/O ANILLO DE APRIETE (16). LOS PROCESOS DE LA INVENCION DA COMO RESULTADO UNA LIMPIEZA MEJORADA DE LA PANTALLA (17) Y/O EL ANILLO DE APRIETE (16) Y UNA ADHESION MEJORADA MATERIAL CHISPORROTEADO SOBRE ESTOS, CON LO QUE SE INCREMENTA EL TIEMPO ANTES DE QUE LA PANTALLA/ANILLO DE APRIETE DEBEN SER LIMPIADO Y SE REDUCE EL TIEMPO DE LA CAMARA DE DEPOSICION DE VAPOR FISICO (14).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/928,566 US5391275A (en) | 1990-03-02 | 1992-08-11 | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2094968T3 true ES2094968T3 (es) | 1997-02-01 |
Family
ID=25456439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES93109942T Expired - Lifetime ES2094968T3 (es) | 1992-08-11 | 1993-06-22 | Procedimiento para preparar un blindaje para reducir las particulas dentro de una camara de deposicion fisica por vapor. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5391275A (es) |
| EP (1) | EP0584483B1 (es) |
| JP (1) | JP3133196B2 (es) |
| KR (1) | KR100272111B1 (es) |
| DE (1) | DE69305291T2 (es) |
| ES (1) | ES2094968T3 (es) |
Families Citing this family (90)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5518593A (en) * | 1994-04-29 | 1996-05-21 | Applied Komatsu Technology, Inc. | Shield configuration for vacuum chamber |
| US6073830A (en) * | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
| US5916454A (en) * | 1996-08-30 | 1999-06-29 | Lam Research Corporation | Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber |
| US5942041A (en) * | 1996-09-16 | 1999-08-24 | Mosel-Vitelic, Inc. | Non-sticking semi-conductor wafer clamp and method of making same |
| US5763895A (en) * | 1997-01-13 | 1998-06-09 | Taiwan Semiconductor Manufacturing Company Ltd. | Source inner shield for eaton NV-10 high current implanter |
| SG54602A1 (en) * | 1996-11-26 | 1998-11-16 | Applied Materials Inc | Coated deposition chamber equipment |
| US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
| WO1998031845A1 (en) * | 1997-01-16 | 1998-07-23 | Bottomfield, Layne, F. | Vapor deposition components and corresponding methods |
| US5945354A (en) * | 1997-02-03 | 1999-08-31 | Motorola, Inc. | Method for reducing particles deposited onto a semiconductor wafer during plasma processing |
| US6599399B2 (en) * | 1997-03-07 | 2003-07-29 | Applied Materials, Inc. | Sputtering method to generate ionized metal plasma using electron beams and magnetic field |
| US6589407B1 (en) * | 1997-05-23 | 2003-07-08 | Applied Materials, Inc. | Aluminum deposition shield |
| USD403337S (en) | 1997-08-05 | 1998-12-29 | Applied Materials, Inc. | High conductance low wall deposition upper shield |
| US6287436B1 (en) | 1998-02-27 | 2001-09-11 | Innovent, Inc. | Brazed honeycomb collimator |
| KR100319716B1 (ko) * | 1998-04-07 | 2002-01-09 | 손정하 | 상압 기상 증착 장치의 쉴드 세정 장치 및 그 세정방법 |
| KR100293450B1 (ko) * | 1998-05-25 | 2001-11-30 | 김영환 | 반도체소자제조를위한식각용챔버의쉴드링 |
| US6013984A (en) * | 1998-06-10 | 2000-01-11 | Lam Research Corporation | Ion energy attenuation method by determining the required number of ion collisions |
| US6245668B1 (en) * | 1998-09-18 | 2001-06-12 | International Business Machines Corporation | Sputtered tungsten diffusion barrier for improved interconnect robustness |
| US6258228B1 (en) * | 1999-01-08 | 2001-07-10 | Tokyo Electron Limited | Wafer holder and clamping ring therefor for use in a deposition chamber |
| JP4101966B2 (ja) * | 1999-03-24 | 2008-06-18 | 三菱電機株式会社 | 薄膜の成膜装置 |
| US6083360A (en) * | 1999-04-08 | 2000-07-04 | Sandia Corporation | Supplemental heating of deposition tooling shields |
| US6164519A (en) * | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of bonding a sputtering target to a backing plate |
| US6168696B1 (en) | 1999-09-01 | 2001-01-02 | Micron Technology, Inc. | Non-knurled induction coil for ionized metal deposition, sputtering apparatus including same, and method of constructing the apparatus |
| US6176931B1 (en) | 1999-10-29 | 2001-01-23 | International Business Machines Corporation | Wafer clamp ring for use in an ionized physical vapor deposition apparatus |
| JP5058242B2 (ja) * | 2000-03-21 | 2012-10-24 | シャープ株式会社 | 表面処理方法 |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6428663B1 (en) | 2000-07-03 | 2002-08-06 | Applied Materials, Inc. | Preventing defect generation from targets through applying metal spray coatings on sidewalls |
| US6841008B1 (en) * | 2000-07-17 | 2005-01-11 | Cypress Semiconductor Corporation | Method for cleaning plasma etch chamber structures |
| US6439244B1 (en) * | 2000-10-13 | 2002-08-27 | Promos Technologies, Inc. | Pedestal design for a sputter clean chamber to improve aluminum gap filling ability |
| US6395151B1 (en) * | 2000-10-26 | 2002-05-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Vacuum ARC vapor deposition method and apparatus for applying identification symbols to substrates |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| US20020142612A1 (en) * | 2001-03-30 | 2002-10-03 | Han-Ming Wu | Shielding plate in plasma for uniformity improvement |
| DE10122070B4 (de) * | 2001-05-07 | 2005-07-07 | Texas Instruments Deutschland Gmbh | Kathodenzerstäubungskammer zum Aufbringen von Material auf der Oberfläche einer in der Kammer befindlichen Halbleiterscheibe |
| JP2003031535A (ja) * | 2001-07-11 | 2003-01-31 | Mitsubishi Electric Corp | 半導体製造装置の超音波洗浄方法 |
| KR100427842B1 (ko) * | 2001-09-21 | 2004-04-30 | 장건 | 진공증착박막코팅챔버용 실드 및 그 제조방법 |
| US6656535B2 (en) * | 2001-12-21 | 2003-12-02 | Applied Materials, Inc | Method of fabricating a coated process chamber component |
| JP3958080B2 (ja) * | 2002-03-18 | 2007-08-15 | 東京エレクトロン株式会社 | プラズマ処理装置内の被洗浄部材の洗浄方法 |
| US7026009B2 (en) * | 2002-03-27 | 2006-04-11 | Applied Materials, Inc. | Evaluation of chamber components having textured coatings |
| US20040206804A1 (en) * | 2002-07-16 | 2004-10-21 | Jaeyeon Kim | Traps for particle entrapment in deposition chambers |
| KR100465877B1 (ko) * | 2002-08-23 | 2005-01-13 | 삼성전자주식회사 | 반도체 식각 장치 |
| US7250220B1 (en) | 2002-10-03 | 2007-07-31 | Tosoh Set, Inc. | Bond strength of coatings to ceramic components |
| US6902628B2 (en) * | 2002-11-25 | 2005-06-07 | Applied Materials, Inc. | Method of cleaning a coated process chamber component |
| US7964085B1 (en) | 2002-11-25 | 2011-06-21 | Applied Materials, Inc. | Electrochemical removal of tantalum-containing materials |
| US20060226003A1 (en) * | 2003-01-22 | 2006-10-12 | John Mize | Apparatus and methods for ionized deposition of a film or thin layer |
| US20060105182A1 (en) * | 2004-11-16 | 2006-05-18 | Applied Materials, Inc. | Erosion resistant textured chamber surface |
| US20050048876A1 (en) * | 2003-09-02 | 2005-03-03 | Applied Materials, Inc. | Fabricating and cleaning chamber components having textured surfaces |
| KR20060057571A (ko) * | 2003-09-25 | 2006-05-26 | 허니웰 인터내셔널 인코포레이티드 | Pvd 부재 및 코일의 리퍼비싱 방법 |
| US7910218B2 (en) * | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
| DE10358275A1 (de) * | 2003-12-11 | 2005-07-21 | Wiessner Gmbh | Vorrichtung und Verfahren zum Reinigen wenigstens einer Prozesskammer zum Beschichten wenigstens eines Substrats |
| US7264679B2 (en) * | 2004-02-11 | 2007-09-04 | Applied Materials, Inc. | Cleaning of chamber components |
| US20050215059A1 (en) * | 2004-03-24 | 2005-09-29 | Davis Ian M | Process for producing semi-conductor coated substrate |
| US20050238807A1 (en) * | 2004-04-27 | 2005-10-27 | Applied Materials, Inc. | Refurbishment of a coated chamber component |
| US7618769B2 (en) * | 2004-06-07 | 2009-11-17 | Applied Materials, Inc. | Textured chamber surface |
| US20060005767A1 (en) * | 2004-06-28 | 2006-01-12 | Applied Materials, Inc. | Chamber component having knurled surface |
| US20060188742A1 (en) * | 2005-01-18 | 2006-08-24 | Applied Materials, Inc. | Chamber component having grooved surface |
| TWI240328B (en) * | 2004-08-27 | 2005-09-21 | Univ Nat Cheng Kung | Pretreatment process of substrate in micro-nano imprinting technology |
| US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
| US7579067B2 (en) * | 2004-11-24 | 2009-08-25 | Applied Materials, Inc. | Process chamber component with layered coating and method |
| US7959984B2 (en) * | 2004-12-22 | 2011-06-14 | Lam Research Corporation | Methods and arrangement for the reduction of byproduct deposition in a plasma processing system |
| US9659758B2 (en) * | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
| US20060218680A1 (en) * | 2005-03-28 | 2006-09-28 | Bailey Andrew D Iii | Apparatus for servicing a plasma processing system with a robot |
| US20060254613A1 (en) * | 2005-05-16 | 2006-11-16 | Dingjun Wu | Method and process for reactive gas cleaning of tool parts |
| US20060278520A1 (en) * | 2005-06-13 | 2006-12-14 | Lee Eal H | Use of DC magnetron sputtering systems |
| US7319316B2 (en) | 2005-06-29 | 2008-01-15 | Lam Research Corporation | Apparatus for measuring a set of electrical characteristics in a plasma |
| US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
| US7762114B2 (en) * | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
| US7462845B2 (en) * | 2005-12-09 | 2008-12-09 | International Business Machines Corporation | Removable liners for charged particle beam systems |
| US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
| US20080092806A1 (en) * | 2006-10-19 | 2008-04-24 | Applied Materials, Inc. | Removing residues from substrate processing components |
| US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| US7942969B2 (en) * | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| US20090084317A1 (en) * | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Atomic layer deposition chamber and components |
| WO2009086023A2 (en) * | 2007-12-19 | 2009-07-09 | Applied Materials, Inc. | Methods for cleaning process kits and chambers, and for ruthenium recovery |
| JP4591722B2 (ja) * | 2008-01-24 | 2010-12-01 | 信越化学工業株式会社 | セラミックス溶射部材の製造方法 |
| US20090194414A1 (en) * | 2008-01-31 | 2009-08-06 | Nolander Ira G | Modified sputtering target and deposition components, methods of production and uses thereof |
| US8109190B2 (en) * | 2008-08-23 | 2012-02-07 | George Arthur Proulx | Railgun system |
| TWI490051B (zh) * | 2011-02-18 | 2015-07-01 | Kim Mun Hwan | 物理氣相沉積之反應室腔體零件之清潔方法 |
| US8701639B2 (en) | 2011-04-14 | 2014-04-22 | George Arthur Proulx | Open railgun with steel barrel sections |
| DE102011081136A1 (de) | 2011-08-17 | 2013-02-21 | Robert Bosch Gmbh | Ultraschallreinigungsanlage mit mindestens einem Ultraschallreiniger |
| US9101954B2 (en) | 2013-09-17 | 2015-08-11 | Applied Materials, Inc. | Geometries and patterns for surface texturing to increase deposition retention |
| US20160168687A1 (en) * | 2014-12-14 | 2016-06-16 | Applied Materials, Inc. | Particle reduction in a deposition chamber using thermal expansion coefficient compatible coating |
| WO2016191621A1 (en) * | 2015-05-27 | 2016-12-01 | Applied Materials, Inc. | Methods and apparatus for a microwave batch curing process |
| ITUB20154187A1 (it) | 2015-10-06 | 2016-01-06 | Fameccanica Data Spa | Procedimento ed apparecchiatura per la produzione di una struttura assorbente |
| US9773665B1 (en) * | 2016-12-06 | 2017-09-26 | Applied Materials, Inc. | Particle reduction in a physical vapor deposition chamber |
| US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
| CN111334842B (zh) * | 2020-04-09 | 2021-06-18 | 厦门科瑞声科技有限公司 | 一种pvd电镀悬挂工装结构 |
| CN114226327A (zh) * | 2021-12-17 | 2022-03-25 | 富乐德科技发展(天津)有限公司 | 一种去除陶瓷基材表面沉积的复合沉积物的清洗方法 |
| CN117551978A (zh) * | 2023-11-09 | 2024-02-13 | 湖南普照信息材料有限公司 | 一种改善膜层颗粒的方法 |
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| US3649502A (en) * | 1969-08-14 | 1972-03-14 | Precision Instr Co | Apparatus for supported discharge sputter-coating of a substrate |
| FR2088659A5 (es) * | 1970-04-21 | 1972-01-07 | Progil | |
| US3699034A (en) * | 1971-03-15 | 1972-10-17 | Sperry Rand Corp | Method for sputter depositing dielectric materials |
| BE786708A (fr) * | 1971-07-29 | 1973-01-25 | Uss Eng & Consult | Application d'un revetement de chrome brillant sous un vide modere |
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-
1992
- 1992-08-11 US US07/928,566 patent/US5391275A/en not_active Expired - Fee Related
-
1993
- 1993-06-22 ES ES93109942T patent/ES2094968T3/es not_active Expired - Lifetime
- 1993-06-22 DE DE69305291T patent/DE69305291T2/de not_active Expired - Fee Related
- 1993-06-22 EP EP93109942A patent/EP0584483B1/en not_active Expired - Lifetime
- 1993-07-29 JP JP05188278A patent/JP3133196B2/ja not_active Expired - Fee Related
- 1993-08-11 KR KR1019930015524A patent/KR100272111B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69305291T2 (de) | 1997-05-28 |
| KR100272111B1 (ko) | 2000-11-15 |
| DE69305291D1 (de) | 1996-11-14 |
| EP0584483A1 (en) | 1994-03-02 |
| US5391275A (en) | 1995-02-21 |
| JPH06192859A (ja) | 1994-07-12 |
| EP0584483B1 (en) | 1996-10-09 |
| JP3133196B2 (ja) | 2001-02-05 |
| KR940004712A (ko) | 1994-03-15 |
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