ES2154850T3 - Formacion de contactos en sustratos semiconductores para detectores de radiacion y dispositivos de creacion de imagenes. - Google Patents

Formacion de contactos en sustratos semiconductores para detectores de radiacion y dispositivos de creacion de imagenes.

Info

Publication number
ES2154850T3
ES2154850T3 ES96941641T ES96941641T ES2154850T3 ES 2154850 T3 ES2154850 T3 ES 2154850T3 ES 96941641 T ES96941641 T ES 96941641T ES 96941641 T ES96941641 T ES 96941641T ES 2154850 T3 ES2154850 T3 ES 2154850T3
Authority
ES
Spain
Prior art keywords
contacts
substrate surface
layer
formation
image creation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96941641T
Other languages
English (en)
Inventor
Risto Olavi Orava
Jouni Ilari Pyyhtia
Tom Gunnar Schulman
Miltiadis Evangelos Sarakinos
Konstantinos Evange Spartiotis
Panu Yrjaenae Jalas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Simage Oy
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Application granted granted Critical
Publication of ES2154850T3 publication Critical patent/ES2154850T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Apparatus For Radiation Diagnosis (AREA)

Abstract

LA INVENCION SE REFIERE A UN METODO QUE ES ADECUADO PARA FORMAR UNOS CONTACTOS METALICOS (31) EN UN SUSTRATO SEMICONDUCTOR (1) EN UNAS POSICIONES, PARA DEFINIR LAS CELULAS DETECTORAS DE RADIACION, E INCLUYE LOS PASOS PARA FORMAR UNA O MAS CAPAS DE MATERIAL (11, 12) SOBRE UNA SUPERFICIE DEL SUSTRATO, CON UNAS ABERTURAS (23) A LA SUPERFICIE DEL SUSTRATO EN LAS POSICIONES DE CONTACTO; FORMAR UNA CAPA DE METAL (24) SOBRE LA CAPA(S) DE MATERIAL Y DE LAS ABERTURAS; Y EXTRAER EL METAL, EN LA CAPA(S) SUBYACENTE DE MATERIAL (28) PARA SEPARAR LOS CONTACTOS INDIVIDUALES. OPCIONALMENTE, UNA CAPA DE PASIVACION (11) QUE SE DEJA ENTRE LOS CONTACTOS INDIVIDUALES EN LA SUPERFICIE DEL SUSTRATO, SE PUEDE APLICAR DURANTE EL METODO. UN METODO, DE ACUERDO CON LA INVENCION, PREVIENE QUE SE USEN REACTIVOS PARA EXTRAER EL ORO NO DESEADO (U OTRA MATERIA DE CONTACTO) Y QUE ENTREN EN CONTACTO CON LA SUPERFICIE DEL SUSTRATO (POR EJEMPLO, CDZNTE) Y CAUSEN UNA DEGRADACION DE LAS PROPIEDADES RESISTIVAS DEL SUSTRATO. SE DESCRIBE TAMBIEN EL PRODUCTO DEL METODO Y LOS USOS DEL MISMO.
ES96941641T 1995-11-29 1996-11-26 Formacion de contactos en sustratos semiconductores para detectores de radiacion y dispositivos de creacion de imagenes. Expired - Lifetime ES2154850T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9524387A GB2307785B (en) 1995-11-29 1995-11-29 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (1)

Publication Number Publication Date
ES2154850T3 true ES2154850T3 (es) 2001-04-16

Family

ID=10784628

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96941641T Expired - Lifetime ES2154850T3 (es) 1995-11-29 1996-11-26 Formacion de contactos en sustratos semiconductores para detectores de radiacion y dispositivos de creacion de imagenes.

Country Status (16)

Country Link
US (2) US6046068A (es)
EP (2) EP1001469A3 (es)
JP (2) JP3540325B2 (es)
CN (1) CN1113392C (es)
AT (1) ATE198679T1 (es)
AU (1) AU713954B2 (es)
CA (1) CA2238827C (es)
DE (1) DE69611540T2 (es)
DK (1) DK0864171T3 (es)
ES (1) ES2154850T3 (es)
GB (1) GB2307785B (es)
GR (1) GR3035628T3 (es)
IL (2) IL124656A0 (es)
NO (1) NO982444L (es)
PT (1) PT864171E (es)
WO (1) WO1997020342A1 (es)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
GB2352084B (en) * 1999-07-13 2002-11-13 Simage Oy Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US6410922B1 (en) * 1995-11-29 2002-06-25 Konstantinos Evangelos Spartiotis Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US20020158207A1 (en) * 1996-11-26 2002-10-31 Simage, Oy. Forming contacts on semiconductor substrates for radiation detectors and imaging devices
GB2325081B (en) * 1997-05-06 2000-01-26 Simage Oy Semiconductor imaging device
US7001849B2 (en) * 1998-07-16 2006-02-21 Sandia National Laboratories Surface treatment and protection method for cadmium zinc telluride crystals
US9029793B2 (en) 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
GB2344550A (en) * 1998-12-09 2000-06-14 Ibm Pad design for electronic package
US6284561B1 (en) * 1999-10-08 2001-09-04 United Microelectronics Corp. Method of forming a metal plate of a fingerprint sensor chip on a semiconductor wafer
FI120561B (fi) 2000-03-07 2009-11-30 Planmeca Oy Digitaalikamera, kuvantamislaite ja menetelmä digitaalisessa kuvantamisessa
JP2002246582A (ja) * 2000-10-26 2002-08-30 Canon Inc 放射線検出装置、その製造方法及びシステム
IL143853A0 (en) * 2001-06-19 2002-04-21 Real Time Radiography Ltd Laminated radiation detector and process for its fabrication
US6781132B2 (en) * 2001-08-10 2004-08-24 The Regents Of The University Of Michigan Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
GB0224689D0 (en) * 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
WO2004038810A2 (en) 2002-10-25 2004-05-06 Goldpower Limited Circuit substrate and method
US7223981B1 (en) 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7763820B1 (en) 2003-01-27 2010-07-27 Spectramet, Llc Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli
US20060033029A1 (en) * 2004-08-13 2006-02-16 V-Target Technologies Ltd. Low-voltage, solid-state, ionizing-radiation detector
CN1328598C (zh) * 2005-01-26 2007-07-25 上海大学 共面栅阳极碲锌镉探测器的制备方法
JP2008546177A (ja) * 2005-05-16 2008-12-18 Ｉｉ−Ｖｉ インコーポレイテッド 高性能のＣｄｘＺｎ１−ｘＴｅ（０≦ｘ≦１）のＸ線及びγ線の放射線検出器およびその製造方法
CA2541256A1 (en) * 2006-02-22 2007-08-22 Redlen Technologies Inc. Shielding electrode for monolithic radiation detector
GB0615452D0 (en) * 2006-08-03 2006-09-13 Radiation Watch Ltd Sensors
DE102006046314A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter
US7589324B2 (en) * 2006-12-21 2009-09-15 Redlen Technologies Use of solder mask as a protective coating for radiation detector
US7462833B2 (en) * 2007-04-17 2008-12-09 Redlen Technologies Multi-functional cathode packaging design for solid-state radiation detectors
EP2193533B1 (en) * 2007-06-29 2011-05-25 Koninklijke Philips Electronics N.V. Electrical contact for a cadmium tellurium component
US7955992B2 (en) * 2008-08-08 2011-06-07 Redlen Technologies, Inc. Method of passivating and encapsulating CdTe and CZT segmented detectors
US8614423B2 (en) * 2009-02-02 2013-12-24 Redlen Technologies, Inc. Solid-state radiation detector with improved sensitivity
US9202961B2 (en) 2009-02-02 2015-12-01 Redlen Technologies Imaging devices with solid-state radiation detector with improved sensitivity
JP2010210590A (ja) * 2009-03-12 2010-09-24 Fujifilm Corp 放射線検出器
WO2010132056A1 (en) 2009-05-14 2010-11-18 Neoprobe Corporation Stacked crystal array for detection of photon emissions
US8476101B2 (en) * 2009-12-28 2013-07-02 Redlen Technologies Method of fabricating patterned CZT and CdTe devices
US9000389B2 (en) * 2011-11-22 2015-04-07 General Electric Company Radiation detectors and methods of fabricating radiation detectors
WO2015157124A1 (en) 2014-04-07 2015-10-15 Flir Systems, Inc. Method and systems for coupling semiconductor substrates
DE102014211602B4 (de) * 2014-06-17 2018-10-25 Siemens Healthcare Gmbh Detektormodul für einen Röntgendetektor
WO2016132242A1 (en) 2015-02-17 2016-08-25 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof
KR101835089B1 (ko) * 2015-11-16 2018-03-08 주식회사 디알텍 방사선 검출장치와 이를 포함하는 방사선 촬영장치
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
US11733408B2 (en) 2020-04-28 2023-08-22 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677740A (en) * 1973-06-29 1987-07-07 Hughes Aircraft Company Forming monolithic planar opto-isolators by selective implantation and proton bombardment
JPS5623783A (en) * 1979-08-01 1981-03-06 Matsushita Electronics Corp Formation of electrode for semiconductor device
US4369458A (en) * 1980-07-01 1983-01-18 Westinghouse Electric Corp. Self-aligned, flip-chip focal plane array configuration
DE3278553D1 (en) * 1981-06-24 1988-06-30 Secr Defence Brit Photo diodes
JPS59227168A (ja) * 1983-06-08 1984-12-20 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出器
JPS604214A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 半導体装置の製造方法
JPS6226812A (ja) * 1985-07-26 1987-02-04 Mitsubishi Electric Corp 半導体装置の製造方法
US4670097A (en) * 1985-12-23 1987-06-02 Gte Products Corporation Method for patterning transparent layers on a transparent substrate
JPS62274715A (ja) * 1986-05-23 1987-11-28 Nec Corp 半導体装置の製造方法
JPS63181481A (ja) * 1987-01-23 1988-07-26 Matsushita Electric Ind Co Ltd 半導体放射線検出器
JPS63299120A (ja) * 1987-05-28 1988-12-06 Mitsubishi Electric Corp 半導体装置の電極形成方法
JPH0240968A (ja) * 1988-07-29 1990-02-09 Matsushita Electric Ind Co Ltd 半導体放射線検出器およびその製造方法
JPH02232978A (ja) * 1989-03-07 1990-09-14 Matsushita Electric Ind Co Ltd 半導体放射線検出器及びその製造方法
EP0415541B1 (en) * 1989-07-29 1994-10-05 Shimadzu Corporation Semiconductor-based radiation image detector and its manufacturing method
US5006488A (en) * 1989-10-06 1991-04-09 International Business Machines Corporation High temperature lift-off process
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
GB9015820D0 (en) * 1990-07-18 1990-09-05 Raychem Ltd Processing microchips
US5296407A (en) * 1990-08-30 1994-03-22 Seiko Epson Corporation Method of manufacturing a contact structure for integrated circuits
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
US5528495A (en) * 1993-09-01 1996-06-18 Schlumberger Technology Corporation Cadmium zinc telluride borehole detector
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
AU706101B2 (en) * 1994-12-23 1999-06-10 Digirad Semiconductor gamma-ray camera and medical imaging system

Also Published As

Publication number Publication date
GB2307785B (en) 1998-04-29
CN1203695A (zh) 1998-12-30
JP3540325B2 (ja) 2004-07-07
GB9524387D0 (en) 1996-01-31
JP2003229555A (ja) 2003-08-15
ATE198679T1 (de) 2001-01-15
GR3035628T3 (en) 2001-06-29
EP0864171B1 (en) 2001-01-10
HK1010282A1 (en) 1999-06-17
EP1001469A2 (en) 2000-05-17
IL124656A0 (en) 1998-12-06
IL124656A (en) 2001-10-31
US6046068A (en) 2000-04-04
EP1001469A3 (en) 2000-09-06
HK1004243A1 (en) 1998-11-20
AU1096797A (en) 1997-06-19
DE69611540D1 (de) 2001-02-15
WO1997020342A1 (en) 1997-06-05
NO982444D0 (no) 1998-05-28
GB2307785A (en) 1997-06-04
CA2238827A1 (en) 1997-06-05
AU713954B2 (en) 1999-12-16
CN1113392C (zh) 2003-07-02
DK0864171T3 (da) 2001-01-29
US6215123B1 (en) 2001-04-10
CA2238827C (en) 2002-10-29
DE69611540T2 (de) 2001-04-26
JP2000516392A (ja) 2000-12-05
NO982444L (no) 1998-07-29
EP0864171A1 (en) 1998-09-16
PT864171E (pt) 2001-05-31

Similar Documents

Publication Publication Date Title
NO982444L (no) Kontaktdannelse pö halvledersubstrater for strölingsdetektorer og billeddannende innretninger
MX9207523A (es) Celda solar y metodo para la fabricacion de la misma.
EP0308127A3 (en) Semi-conductor photo-detecting device
JPS5710992A (en) Semiconductor device and manufacture therefor
ES2143789T3 (es) Pelicula adhesiva.
ES2171757T3 (es) Procedimiento de dopado para producir homouniones en sustratos de semiconductores.
EP0390509A3 (en) Semi-conductor device and method of manufacturing the same
EP0612112A3 (en) Semiconductor layer with chalcopyrite structure and manufacturing method.
EP0087312A3 (en) Formation of regions of different conductivity types in a substrate
JPS5775442A (en) Semiconductor device
JPS58127333A (ja) 半導体チップ封止方法
ES2185588T3 (es) Dispositivo de circuito integrado asegurado contra ataques realizados por destrucciob controlada de una capa complementaria.
JPS5658269A (en) Mos type semiconductor device
KR970031759A (ko) 콘택 이미지 센서
EP0928021A4 (en) MANUFACTURING METHOD FOR A SEMICONDUCTOR COMPONENT
JPS57117255A (en) Semiconductor ic device
TW372331B (en) Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus
EP0590652A3 (en) Method for producing contacts between diffusion layers and conductor tracks of semiconductor components.
ES2150470T3 (es) Tratamiento de cuadros de conductores para disposiciones de paquetes moldeados.
JPS5299085A (en) Production of semiconductor device
WO2001004962A3 (en) Forming contacts on semiconductor substrates for radiation detectors and imaging devices
KR950003894A (ko) 액정 표시장치의 제조방법
JPS5739540A (en) Semiconductor device
ES2156185T3 (es) Procedimiento para el revestimiento de materiales transparentes por medio de deposiciones interferenciales.
KR940022810A (ko) 반도체 칩 패키지 제조방법 및 접착 향상 방법

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 864171

Country of ref document: ES