ATE198679T1 - Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen - Google Patents

Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen

Info

Publication number
ATE198679T1
ATE198679T1 AT96941641T AT96941641T ATE198679T1 AT E198679 T1 ATE198679 T1 AT E198679T1 AT 96941641 T AT96941641 T AT 96941641T AT 96941641 T AT96941641 T AT 96941641T AT E198679 T1 ATE198679 T1 AT E198679T1
Authority
AT
Austria
Prior art keywords
substrate
contacts
layer
generation
forming
Prior art date
Application number
AT96941641T
Other languages
English (en)
Inventor
Risto Olavi Orava
Jouni Ilari Pyyhtia
Tom Gunnar Schulman
Miltiadis Evangelos Sarakinos
Konstantinos Evange Spartiotis
Panu Yrjaenae Jalas
Original Assignee
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simage Oy filed Critical Simage Oy
Application granted granted Critical
Publication of ATE198679T1 publication Critical patent/ATE198679T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
AT96941641T 1995-11-29 1996-11-26 Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen ATE198679T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9524387A GB2307785B (en) 1995-11-29 1995-11-29 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
PCT/EP1996/005348 WO1997020342A1 (en) 1995-11-29 1996-11-26 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (1)

Publication Number Publication Date
ATE198679T1 true ATE198679T1 (de) 2001-01-15

Family

ID=10784628

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96941641T ATE198679T1 (de) 1995-11-29 1996-11-26 Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen

Country Status (16)

Country Link
US (2) US6046068A (de)
EP (2) EP0864171B1 (de)
JP (2) JP3540325B2 (de)
CN (1) CN1113392C (de)
AT (1) ATE198679T1 (de)
AU (1) AU713954B2 (de)
CA (1) CA2238827C (de)
DE (1) DE69611540T2 (de)
DK (1) DK0864171T3 (de)
ES (1) ES2154850T3 (de)
GB (1) GB2307785B (de)
GR (1) GR3035628T3 (de)
IL (2) IL124656A0 (de)
NO (1) NO982444L (de)
PT (1) PT864171E (de)
WO (1) WO1997020342A1 (de)

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GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
US6410922B1 (en) 1995-11-29 2002-06-25 Konstantinos Evangelos Spartiotis Forming contacts on semiconductor substrates for radiation detectors and imaging devices
GB2352084B (en) * 1999-07-13 2002-11-13 Simage Oy Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US20020158207A1 (en) * 1996-11-26 2002-10-31 Simage, Oy. Forming contacts on semiconductor substrates for radiation detectors and imaging devices
GB2325081B (en) * 1997-05-06 2000-01-26 Simage Oy Semiconductor imaging device
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US9029793B2 (en) 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
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US6781132B2 (en) * 2001-08-10 2004-08-24 The Regents Of The University Of Michigan Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
GB0224689D0 (en) * 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
EP1554760B1 (de) 2002-10-25 2009-08-19 Ipl Intellectual Property Licensing Limited Schaltungssubstrat und verfahren
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7763820B1 (en) 2003-01-27 2010-07-27 Spectramet, Llc Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli
US20060033029A1 (en) * 2004-08-13 2006-02-16 V-Target Technologies Ltd. Low-voltage, solid-state, ionizing-radiation detector
CN1328598C (zh) * 2005-01-26 2007-07-25 上海大学 共面栅阳极碲锌镉探测器的制备方法
CN101208617A (zh) * 2005-05-16 2008-06-25 Ⅱ-Ⅵ有限公司 高性能CdxZn1－xTe X射线和γ射线辐射检测器及其制造方法
CA2541256A1 (en) * 2006-02-22 2007-08-22 Redlen Technologies Inc. Shielding electrode for monolithic radiation detector
GB0615452D0 (en) * 2006-08-03 2006-09-13 Radiation Watch Ltd Sensors
DE102006046314A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter
US7589324B2 (en) * 2006-12-21 2009-09-15 Redlen Technologies Use of solder mask as a protective coating for radiation detector
US7462833B2 (en) * 2007-04-17 2008-12-09 Redlen Technologies Multi-functional cathode packaging design for solid-state radiation detectors
EP2193533B1 (de) * 2007-06-29 2011-05-25 Koninklijke Philips Electronics N.V. Elektrischer kontakt für eine cadmium-tellur-komponente
US7955992B2 (en) * 2008-08-08 2011-06-07 Redlen Technologies, Inc. Method of passivating and encapsulating CdTe and CZT segmented detectors
US9202961B2 (en) 2009-02-02 2015-12-01 Redlen Technologies Imaging devices with solid-state radiation detector with improved sensitivity
US8614423B2 (en) * 2009-02-02 2013-12-24 Redlen Technologies, Inc. Solid-state radiation detector with improved sensitivity
JP2010210590A (ja) * 2009-03-12 2010-09-24 Fujifilm Corp 放射線検出器
EP2430475A1 (de) 2009-05-14 2012-03-21 Devicor Medical Products, Inc. Stacked crystal array for detection of photon emissions
US8476101B2 (en) * 2009-12-28 2013-07-02 Redlen Technologies Method of fabricating patterned CZT and CdTe devices
US9000389B2 (en) * 2011-11-22 2015-04-07 General Electric Company Radiation detectors and methods of fabricating radiation detectors
CN106415788B (zh) 2014-04-07 2020-10-16 菲力尔系统公司 用于联接半导体基板的方法和系统
DE102014211602B4 (de) * 2014-06-17 2018-10-25 Siemens Healthcare Gmbh Detektormodul für einen Röntgendetektor
US9847369B2 (en) 2015-02-17 2017-12-19 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof
KR101835089B1 (ko) * 2015-11-16 2018-03-08 주식회사 디알텍 방사선 검출장치와 이를 포함하는 방사선 촬영장치
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
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Also Published As

Publication number Publication date
US6215123B1 (en) 2001-04-10
AU713954B2 (en) 1999-12-16
GB9524387D0 (en) 1996-01-31
JP2000516392A (ja) 2000-12-05
DE69611540D1 (de) 2001-02-15
GB2307785B (en) 1998-04-29
IL124656A (en) 2001-10-31
EP0864171A1 (de) 1998-09-16
PT864171E (pt) 2001-05-31
IL124656A0 (en) 1998-12-06
DE69611540T2 (de) 2001-04-26
NO982444L (no) 1998-07-29
EP1001469A2 (de) 2000-05-17
GR3035628T3 (en) 2001-06-29
CN1113392C (zh) 2003-07-02
US6046068A (en) 2000-04-04
ES2154850T3 (es) 2001-04-16
HK1004243A1 (en) 1998-11-20
GB2307785A (en) 1997-06-04
HK1010282A1 (en) 1999-06-17
CA2238827C (en) 2002-10-29
DK0864171T3 (da) 2001-01-29
NO982444D0 (no) 1998-05-28
CN1203695A (zh) 1998-12-30
AU1096797A (en) 1997-06-19
EP0864171B1 (de) 2001-01-10
JP3540325B2 (ja) 2004-07-07
EP1001469A3 (de) 2000-09-06
JP2003229555A (ja) 2003-08-15
WO1997020342A1 (en) 1997-06-05
CA2238827A1 (en) 1997-06-05

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee