ES2193992T3 - Aparato para localizar defectos de fabricacion en un elemento fotovoltaico. - Google Patents

Aparato para localizar defectos de fabricacion en un elemento fotovoltaico.

Info

Publication number
ES2193992T3
ES2193992T3 ES00970312T ES00970312T ES2193992T3 ES 2193992 T3 ES2193992 T3 ES 2193992T3 ES 00970312 T ES00970312 T ES 00970312T ES 00970312 T ES00970312 T ES 00970312T ES 2193992 T3 ES2193992 T3 ES 2193992T3
Authority
ES
Spain
Prior art keywords
electrode
main surface
substrate
photovoltaic element
manufacturing defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES00970312T
Other languages
English (en)
Inventor
Der Heide Arvid Sven Hjalm Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Research Centre of the Netherlands
Original Assignee
Energy Research Centre of the Netherlands
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Research Centre of the Netherlands filed Critical Energy Research Centre of the Netherlands
Application granted granted Critical
Publication of ES2193992T3 publication Critical patent/ES2193992T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Light Receiving Elements (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Aparato para la localización de defectos de fabricación en un elemento (1) fotovoltaico, el cual está formado sustancialmente mediante un substrato (5, 6, 7) semiconductor en forma de oblea, sobre cuyas superficies principales opuestas se han dispuesto conductores (2, 3, 8) eléctricos para el transporte de portadores de carga eléctrica, que comprende: al menos un primer electrodo (23) en contacto eléctrico con una primera superficie principal de dicho substrato, y que es desplazable sobre el citado substrato, un segundo electrodo (31), que se dispone en contacto eléctrico con un conductor (8) sobre la segunda superficie principal, y medios (27) de ajuste para ajustar una polarización entre los conductores (2, 3, 8) eléctricos de las superficies principales opuestas de dicho substrato, que se caracteriza por: medios (24) de desplazamiento para desplazar el primer electrodo (23) sobre dicha primera superficie principal en dos dirección mutuamente perpendiculares, y medios (25) de medición detensión, para medir la tensión existente entre al menos un primer (23) y un segundo (31) electrodos, en función de la posición del primer electrodo (23) sobre la citada primera superficie principal.
ES00970312T 1999-10-04 2000-09-27 Aparato para localizar defectos de fabricacion en un elemento fotovoltaico. Expired - Lifetime ES2193992T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1013204A NL1013204C2 (nl) 1999-10-04 1999-10-04 Inrichting voor het lokaliseren van productiefouten in een fotovolta´sch element.

Publications (1)

Publication Number Publication Date
ES2193992T3 true ES2193992T3 (es) 2003-11-16

Family

ID=19769986

Family Applications (1)

Application Number Title Priority Date Filing Date
ES00970312T Expired - Lifetime ES2193992T3 (es) 1999-10-04 2000-09-27 Aparato para localizar defectos de fabricacion en un elemento fotovoltaico.

Country Status (9)

Country Link
US (1) US6750662B1 (es)
EP (1) EP1218946B1 (es)
JP (1) JP4628628B2 (es)
AT (1) ATE232016T1 (es)
AU (1) AU772404B2 (es)
DE (1) DE60001333T2 (es)
ES (1) ES2193992T3 (es)
NL (1) NL1013204C2 (es)
WO (1) WO2001026163A1 (es)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7507903B2 (en) 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8076568B2 (en) * 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US8138413B2 (en) 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898054B2 (en) 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898053B2 (en) 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US7276724B2 (en) * 2005-01-20 2007-10-02 Nanosolar, Inc. Series interconnected optoelectronic device module assembly
US7838868B2 (en) * 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
DE102005040010A1 (de) * 2005-08-23 2007-03-15 Rwe Schott Solar Gmbh Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
EP2137543B1 (en) 2007-04-19 2012-02-08 Oerlikon Solar AG, Trübbach Test equipment for automated quality control of thin film solar modules
US20090223511A1 (en) * 2008-03-04 2009-09-10 Cox Edwin B Unglazed photovoltaic and thermal apparatus and method
EP2159583A1 (en) * 2008-08-29 2010-03-03 ODERSUN Aktiengesellschaft System and method for localizing and passivating defects in a photovoltaic element
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
US8247243B2 (en) * 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
JP4866954B2 (ja) * 2009-11-05 2012-02-01 共進電機株式会社 太陽電池セル測定用試料台
WO2011073971A2 (en) * 2009-12-16 2011-06-23 Shenkar College Of Engineering And Design Photovoltaic device and method of its fabrication
US8164818B2 (en) 2010-11-08 2012-04-24 Soladigm, Inc. Electrochromic window fabrication methods
US9306491B2 (en) * 2011-05-16 2016-04-05 First Solar, Inc. Electrical test apparatus for a photovoltaic component
US9507232B2 (en) 2011-09-14 2016-11-29 View, Inc. Portable defect mitigator for electrochromic windows
US9885934B2 (en) 2011-09-14 2018-02-06 View, Inc. Portable defect mitigators for electrochromic windows
WO2013038780A1 (ja) * 2011-09-15 2013-03-21 三洋電機株式会社 太陽電池及び太陽電池モジュール
WO2013138535A1 (en) 2012-03-13 2013-09-19 View, Inc. Pinhole mitigation for optical devices
US9341912B2 (en) 2012-03-13 2016-05-17 View, Inc. Multi-zone EC windows
EP2849915B1 (en) 2012-05-18 2023-11-01 View, Inc. Circumscribing defects in optical devices
CN207135068U (zh) * 2017-08-30 2018-03-23 米亚索乐装备集成（福建）有限公司 可变角度光伏组件户外测试装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301409A (en) * 1978-06-06 1981-11-17 California Institute Of Technology Solar cell anomaly detection method and apparatus
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
JPS58158977A (ja) * 1982-02-25 1983-09-21 ユニバ−シテイ・オブ・デラウエア 薄膜太陽電池を製造する方法及び装置
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
US4599558A (en) * 1983-12-14 1986-07-08 Ibm Photovoltaic imaging for large area semiconductors
JPS6154681A (ja) * 1984-08-25 1986-03-18 Fuji Electric Corp Res & Dev Ltd 薄膜光起電力素子の製造方法
JPS6358274A (ja) * 1986-08-29 1988-03-14 Nec Corp 半導体受光素子測定装置
JPH02216844A (ja) * 1989-02-17 1990-08-29 Toshiba Corp 半導体の光電特性測定方法
JP2633953B2 (ja) * 1989-03-28 1997-07-23 シャープ株式会社 積層型太陽電池の特性測定方法
US5521519A (en) * 1992-07-30 1996-05-28 International Business Machines Corporation Spring probe with piloted and headed contact and method of tip formation
US5517128A (en) * 1993-01-05 1996-05-14 Sentech Instruments Gmbh Method and arrangement for charge carrier profiling in semiconductor structure by means of AFM scanning

Also Published As

Publication number Publication date
DE60001333D1 (de) 2003-03-06
DE60001333T2 (de) 2004-01-15
JP2003511861A (ja) 2003-03-25
EP1218946B1 (en) 2003-01-29
NL1013204C2 (nl) 2001-04-05
ATE232016T1 (de) 2003-02-15
AU772404B2 (en) 2004-04-29
WO2001026163A1 (en) 2001-04-12
US6750662B1 (en) 2004-06-15
JP4628628B2 (ja) 2011-02-09
EP1218946A1 (en) 2002-07-03
AU7971100A (en) 2001-05-10

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