FR1541432A - Dispositif semiconducteur comportant un transistor à effet de champ, à électrode de porte isolée et circuit renfermant un dispositif semiconducteur de ce genre - Google Patents

Dispositif semiconducteur comportant un transistor à effet de champ, à électrode de porte isolée et circuit renfermant un dispositif semiconducteur de ce genre

Info

Publication number
FR1541432A
FR1541432A FR125043A FR125043A FR1541432A FR 1541432 A FR1541432 A FR 1541432A FR 125043 A FR125043 A FR 125043A FR 125043 A FR125043 A FR 125043A FR 1541432 A FR1541432 A FR 1541432A
Authority
FR
France
Prior art keywords
semiconductor device
gate electrode
field effect
effect transistor
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR125043A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL6614857A external-priority patent/NL6614857A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to FR125043A priority Critical patent/FR1541432A/fr
Application granted granted Critical
Publication of FR1541432A publication Critical patent/FR1541432A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
FR125043A 1966-10-21 1967-10-19 Dispositif semiconducteur comportant un transistor à effet de champ, à électrode de porte isolée et circuit renfermant un dispositif semiconducteur de ce genre Expired FR1541432A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR125043A FR1541432A (fr) 1966-10-21 1967-10-19 Dispositif semiconducteur comportant un transistor à effet de champ, à électrode de porte isolée et circuit renfermant un dispositif semiconducteur de ce genre

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6614857A NL6614857A (fr) 1966-10-21 1966-10-21
FR125043A FR1541432A (fr) 1966-10-21 1967-10-19 Dispositif semiconducteur comportant un transistor à effet de champ, à électrode de porte isolée et circuit renfermant un dispositif semiconducteur de ce genre

Publications (1)

Publication Number Publication Date
FR1541432A true FR1541432A (fr) 1968-10-04

Family

ID=26180135

Family Applications (1)

Application Number Title Priority Date Filing Date
FR125043A Expired FR1541432A (fr) 1966-10-21 1967-10-19 Dispositif semiconducteur comportant un transistor à effet de champ, à électrode de porte isolée et circuit renfermant un dispositif semiconducteur de ce genre

Country Status (1)

Country Link
FR (1) FR1541432A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621347A (en) * 1968-06-14 1971-11-16 Philips Corp Semiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3621347A (en) * 1968-06-14 1971-11-16 Philips Corp Semiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device

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