FR2176998A1 - - Google Patents

Info

Publication number
FR2176998A1
FR2176998A1 FR7310133A FR7310133A FR2176998A1 FR 2176998 A1 FR2176998 A1 FR 2176998A1 FR 7310133 A FR7310133 A FR 7310133A FR 7310133 A FR7310133 A FR 7310133A FR 2176998 A1 FR2176998 A1 FR 2176998A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7310133A
Other languages
French (fr)
Other versions
FR2176998B1 (cs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00237060A external-priority patent/US3808072A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2176998A1 publication Critical patent/FR2176998A1/fr
Application granted granted Critical
Publication of FR2176998B1 publication Critical patent/FR2176998B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
FR7310133A 1972-03-22 1973-03-21 Expired FR2176998B1 (cs)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US00237060A US3808072A (en) 1972-03-22 1972-03-22 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide
US24931172A 1972-05-01 1972-05-01

Publications (2)

Publication Number Publication Date
FR2176998A1 true FR2176998A1 (cs) 1973-11-02
FR2176998B1 FR2176998B1 (cs) 1976-11-05

Family

ID=26930348

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7310134A Expired FR2176999B1 (cs) 1972-03-22 1973-03-21
FR7310133A Expired FR2176998B1 (cs) 1972-03-22 1973-03-21

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7310134A Expired FR2176999B1 (cs) 1972-03-22 1973-03-21

Country Status (6)

Country Link
JP (2) JPS5232831B2 (cs)
FR (2) FR2176999B1 (cs)
GB (2) GB1425101A (cs)
IT (2) IT982897B (cs)
NL (2) NL160989C (cs)
SE (2) SE388972B (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244582A (en) * 1975-10-06 1977-04-07 New Japan Radio Co Ltd Semiconductor device and process for production of the same
JPS55114620A (en) * 1979-02-22 1980-09-04 Yoshio Kaneda Driver's cab on tractor or the like
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor
JPS5770810A (en) * 1980-10-17 1982-05-01 Lion Corp Cosmetic for hair
JPS60222410A (ja) * 1984-04-20 1985-11-07 Asahi Denka Kogyo Kk シヤンプ−組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (cs) * 1972-06-06 1974-02-13

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DEVICE QUALITY GALLIUM ARSENIDE LAYERS', A. BRADSHAW ET AL, PAGES 45-50.) *
REVUE BRITANNIQUE 'SOLID STATE TECHNOLOGY', VOL 13,N 10, OCTOBRE 1970 'EPITAXIAL GROUTH OF *

Also Published As

Publication number Publication date
GB1425101A (en) 1976-02-18
FR2176999B1 (cs) 1978-03-03
FR2176998B1 (cs) 1976-11-05
NL7303954A (cs) 1973-09-25
DE2313768A1 (de) 1973-10-04
NL7303958A (cs) 1973-09-25
IT979892B (it) 1974-09-30
JPS5232831B2 (cs) 1977-08-24
JPS4948281A (cs) 1974-05-10
SE375557B (cs) 1975-04-21
DE2313768B2 (de) 1975-11-20
GB1425102A (en) 1976-02-18
JPS5019367A (cs) 1975-02-28
JPS5433711B2 (cs) 1979-10-22
NL160989B (nl) 1979-07-16
NL160989C (nl) 1979-12-17
IT982897B (it) 1974-10-21
FR2176999A1 (cs) 1973-11-02
NL162313C (nl) 1980-05-16
SE388972B (sv) 1976-10-18
NL162313B (nl) 1979-12-17

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Legal Events

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ST Notification of lapse