HK5195A - Removal of surface contaminants by irradiation from a high-energy source - Google Patents

Removal of surface contaminants by irradiation from a high-energy source Download PDF

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Publication number
HK5195A
HK5195A HK5195A HK5195A HK5195A HK 5195 A HK5195 A HK 5195A HK 5195 A HK5195 A HK 5195A HK 5195 A HK5195 A HK 5195A HK 5195 A HK5195 A HK 5195A
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HK
Hong Kong
Prior art keywords
treatment surface
gas
substrate
substrate treatment
laser
Prior art date
Application number
HK5195A
Other languages
German (de)
English (en)
Inventor
Audrey C Engelsberg
Original Assignee
Cauldron Limited Partnership
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Filing date
Publication date
Application filed by Cauldron Limited Partnership filed Critical Cauldron Limited Partnership
Publication of HK5195A publication Critical patent/HK5195A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/091—Laser beam processing of fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Cleaning In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Paper (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Calculators And Similar Devices (AREA)

Claims (20)

  1. Procédé pour éliminer les contaminants de surface de la surface d'un substrat tout en préservant la structure moléculaire de la surface traitée, ledit procédé comprenant les étapes suivantes :    faire passer continuellement un gaz sur la surface du substrat traité, ledit gaz étant inerte vis-à-vis de la surface du substrat traité; et    irradier ledit substrat par un rayonnement à haute énergie, ladite irradiation ayant une densité énergétique et une durée comprises entre celle requise pour éliminer les contaminants de surface de la surface du substrat traité et celle requise pour modifier la structure moléculaire de la surface du substrat traité.
  2. Procédé selon la revendication 1, dans lequel ladite étape d'irradiation dudit substrat à rayonnement à haute énergie comprend l'irradiation dudit substrat par un rayonnement produit par laser.
  3. Procédé selon la revendication 1, dans lequel ledit rayonnement à haute énergie est un rayonnement produit par laser.
  4. Procédé selon la revendication 1, comprenant en outre les étapes suivantes :    analyse du gaz qui est passé sur la surface du substrat traité pendant le traitement par laser, afin de déterminer la composition des contaminants éliminés;et    réglage de la densité énergétique et de la durée dudit rayonnement à impulsions laser afin d'augmenter le niveau énergétique du traitement de la surface au-dessus de celui requis pour rompre les liaisons entre les contaminants de la surface analysée et la surface traitée.
  5. Procédé selon la revendication 4, dans lequel ladite étape de réglage de la densité énergétique et de la durée dudit rayonnement à impulsions laser comprend le réglage de la densité énergétique et de la durée dudit rayonnement à impulsions laser afin d'augmenter le niveau énergétique de la surface à traiter entre deux et cinq fois celui requis pour rompre les liaisons entre les contaminants de la surface analysée et la surface traitée.
  6. Procédé pour éliminer les contaminants dont les molécules sont chémisorbées de la surface d'un substrat semi-conducteur tout en préservant la surface du substrat traité, ledit procédé comprenant les étapes suivantes :    faire passer continuellement un gaz sur la surface du substrat traité, ledit gaz étant inerte vis-à-vis de la surface du substrat traité; et    irradier ledit substrat avec une série d'impulsions produites par laser, ladite série d'impulsions laser ayant une durée d'au moins 6000 impulsions et chaque impulsion ayant une densité énergétique comprise dans la gamme de 35 à 75 mJ/cm².
  7. Procédé selon la revendication 6, dans lequel ladite surface de substrat semi-conducteur traité est constituée essentiellement de silicium.
  8. Procédé selon la revendication 6, dans lequel ladite surface du substrat semi-conducteur traité est constituée essentiellement de silicium, sur lequel des circuits semi-conducteurs ont été déposés.
  9. Procédé selon la revendication 8, dans lequel ledit rayonnement produit par laser a une durée d'environ 6000 impulsions et une densité énergétique d'environ 35 mJ/cm².
  10. Procédé selon la revendication 1, pour éliminer les contaminants moléculaires de la surface d'un substrat semi-conducteur pendant la fabrication du semi-conducteur tout en préservant la surface du substrat traité, ledit procédé comprenant les étapes suivantes :    faire passer un gaz sur la surface du substrat semiconducteur traité, ledit gaz étant inerte vis-à-vis de la surface du substrat traité;    pendant le passage dudit gaz inerte sur la surface du substrat traité, irradier ledit substrat avant le dépôt des circuits sur la surface de substrat semi-conducteur traité avec un rayonnement produit par laser, ledit rayonnement ayant une densité énergétique et une durée comprises entre celle requise pour éliminer les contaminants de surface de la surface de substrat traité et celle requise pour modifier la structure moléculaire de la surface de substrat traité.    déposer une couche de circuit sur ladite surface de substrat semi-conducteur traité;    faire passer un gaz sur ladite couche déposée, ledit gaz étant inerte vis-à-vis de la surface de substrat traité et vis-à-vis de ladite couche déposée;    pendant le passage dudit gaz inerte sur la surface de substrat traité et sur la couche déposée, irradier ladite surface de substrat traité après dépôt des circuits sur celle-ci par un rayonnement produit par laser, ledit rayonnement ayant une densité énergétique et une durée comprises entre celle requise pour éliminer les contaminants de surface de la surface de substrat traité et celle requise pour modifier la structure moléculaire de la surface de substrat traité.
  11. Procédé selon la revendication 10, dans lequel ladite surface de substrat traité est constituée essentiellement de silicium.
  12. Procédé selon la revendication 12, dans lequel ledit rayonnement produit par laser a une durée d'environ 6000 impulsions et une densité énergétique d'environ 35 mJ/cm².
  13. Appareil pour éliminer les contaminants adsorbés en surface de la surface d'un substrat (12) tout en préservant la surface du substrat traité, ledit appareil comprenant :    un gaz (18) inerte vis-à-vis de la surface du substrat traité;    un moyen pour débiter du gaz afin de faire passer continuellement ledit gaz sur la surface du substrat traité;    un moyen (14) de production d'impulsions laser pour envoyer sur la surface du substrat traité sur laquelle passe ledit gaz (18) des impulsions laser (11) ayant une capacité énergétique comprise entre l'énergie requise pour rompre les liaisons entre les contaminants adsorbés en surface et la surface traitée et l'énergie requise pour modifier la structure moléculaire de la surface du substrat traité.
  14. Appareil selon la revendication 13, dans lequel ledit moyen (14) pour produire des impulsions laser a une source d'énergie ultraviolette.
  15. Appareil selon la revendication 13, dans lequel ledit moyen (14) pour produire des impulsions laser est un excimer KrF.
  16. Appareil selon la revendication 13, dans lequel ledit moyen pour débiter du gaz comprend :    une enceinte (15) dans laquelle peut être placé le substrat (12) traité, ladite enceinte (15) ayant un orifice d'entrée (23) et un orifice de sortie (25); et    un moyen pour introduire ledit gaz dans ladite enceinte (23) par ledit orifice d'entrée.
  17. Appareil selon la revendication 13, dans lequel ledit gaz inerte vis-à-vis de la surface dudit substrat (12) est un gaz chimiquement inerte.
  18. Appareil selon la revendication 17, dans lequel ledit gaz chimiquement inerte est de l'argon.
  19. Appareil selon la revendication 13, comprenant en outre un analyseur de gaz (27) pour analyser le gaz qui est passé sur la surface de substrat traité pendant la production d'énergie laser sur ladite surface traitée, ledit analyseur de gaz (27) servant à déterminer la composition des contaminants éliminés de ladite surface.
  20. Appareil selon la revendication 16, comprenant en outre un analyseur de gaz (27) pour analyser le gaz qui est passé sur la surface du substrat traité pendant la production d'énergie laser sur ladite surface traitée, ledit analyseur de gaz (27) servant à déterminer la composition des contaminants éliminés de ladite surface, ledit analyseur de gaz (27) étant connecté audit orifice de sortie de l'enceinte.
HK5195A 1988-07-08 1995-01-12 Removal of surface contaminants by irradiation from a high-energy source HK5195A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/216,903 US5024968A (en) 1988-07-08 1988-07-08 Removal of surface contaminants by irradiation from a high-energy source

Publications (1)

Publication Number Publication Date
HK5195A true HK5195A (en) 1995-01-20

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Country Status (16)

Country Link
US (1) US5024968A (fr)
EP (1) EP0350021B1 (fr)
JP (1) JP2634245B2 (fr)
KR (1) KR0157608B1 (fr)
AT (1) ATE88923T1 (fr)
AU (1) AU620766B2 (fr)
BR (1) BR8907529A (fr)
CA (1) CA1328908C (fr)
DE (1) DE68906318T2 (fr)
DK (1) DK303490A (fr)
ES (1) ES2041374T3 (fr)
FI (1) FI910075A0 (fr)
HK (1) HK5195A (fr)
LV (1) LV11116B (fr)
NO (1) NO180739C (fr)
WO (1) WO1990000812A1 (fr)

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JPH0286128A (ja) 1990-03-27
BR8907529A (pt) 1991-06-11
EP0350021A3 (en) 1990-05-23
NO180739B (no) 1997-02-24
DE68906318T2 (de) 1993-10-07
FI910075A7 (fi) 1991-01-07
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LV11116B (en) 1996-10-20
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FI910075A0 (fi) 1991-01-07
EP0350021B1 (fr) 1993-05-05
CA1328908C (fr) 1994-04-26
NO910067L (no) 1991-01-07
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DE68906318D1 (de) 1993-06-09
ATE88923T1 (de) 1993-05-15
ES2041374T3 (es) 1993-11-16
KR0157608B1 (ko) 1998-12-01
LV11116A (lv) 1996-04-20
AU3867689A (en) 1990-02-05
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NO180739C (no) 1997-06-04
EP0350021A2 (fr) 1990-01-10

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