HK5195A - Removal of surface contaminants by irradiation from a high-energy source - Google Patents

Removal of surface contaminants by irradiation from a high-energy source Download PDF

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Publication number
HK5195A
HK5195A HK5195A HK5195A HK5195A HK 5195 A HK5195 A HK 5195A HK 5195 A HK5195 A HK 5195A HK 5195 A HK5195 A HK 5195A HK 5195 A HK5195 A HK 5195A
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Hong Kong
Prior art keywords
treatment surface
gas
substrate
substrate treatment
laser
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HK5195A
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English (en)
French (fr)
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Audrey C Engelsberg
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Cauldron Limited Partnership
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Publication of HK5195A publication Critical patent/HK5195A/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/091—Laser beam processing of fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Cleaning In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Paper (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Calculators And Similar Devices (AREA)

Claims (20)

  1. Verfahren zum Entfernen von Oberflächenverunreinigungen von der Oberfläche eines Substrats, wobei die molekulare Struktur der Substratoberfläche erhalten bleibt, dadurch gekennzeichnet, daß :
    - dauernd ein Gas über die Substratoberfläche strömt, das bezüglich der Substratoberfläche inert ist; und
    - dieses Substrat mit energiereicher Strahlung bestrahlt wird, wobei die Energiedichte der Strahlung und die Bestrahlungsdauer ausreichen, um Oberflächenverunreinigen von der Substratoberfläche abzulösen, aber nicht ausreichen, um die molekulare Struktur der Substratoberfläche zu verändern.
  2. Verfahren gemäß Anspruch 1, dadurch gekennzeichnet, daß bei der Bestrahlung des Substrats mit energiereicher Strahlung das Substrat mit einer von einem Laser erzeugten Strahlung bestrahlt wird.
  3. Verfahren gemäß Anspruch 1, dadurch gekennzeichnet, daß die energiereiche Strahlung eine von einem Laser erzeugte Strahlung ist.
  4. Verfahren gemäß Anspruch 3, dadurch gekennzeichnet, daß :
    - das Gas, das während der Laserbehandlung über die Substratoberfläche geströmt ist, analysiert wird, um die Zusammensetzung der entfernten Verunreinigungen zu bestimmen; und
    - die Energiedichte der Laserimpulsstrahlung und die Bestrahlungsdauer so eingestellt werden, daß das Energieniveau der Substratoberfläche über das Energieniveau angehoben wird, das erforderlich ist, um die Bindungen zwischen den analysierten Oberflächenverunreinigungen und der Substratoberfläche auf zubrechen.
  5. Verfahren gemäß Anspruch 4, dadurch gekennzeichnet, daß bei der Einstellung der Energiedichte der Laserimpulsstrahlung und der Bestrahlungsdauer das Energieniveau der Substratoberfläche auf ein Energieniveau angehoben wird, das zwei- bis fünfmal so hoch ist wie das Energieniveau, das erforderlich ist, um die Bindungen zwischen den analysierten Oberflächenverunreinigungen und der Substratoberfläche aufzubrechen.
  6. Verfahren zum Entfernen von chemisorbierten molekularen Verunreinigungen von der Oberfläche eines Halbleitersubstrats, wobei die Substratoberfläche erhalten bleibt, dadurch gekennzeichnet, daß :
    - dauernd ein Gas über die Substratoberfläche strömt, das bezüglich der Substratoberfläche inert ist; und
    - das Substrat mit einer Reihe von mit einem Laser erzeugten Impulsen bestrahlt wird, die eine Dauer von mindestens 6000 Impulsen hat, wobei jeder Impuls eine Energiedichte im Bereich von 35 bis 75 mJ/cm² hat.
  7. Verfahren gemäß Anspruch 6, dadurch gekennzeichnet, daß die Halbleiter-Substratoberfläche im wesentlichen aus Silizium besteht.
  8. Verfahren gemäß Anspruch 6, dadurch gekennzeichnet, daß die Halbleiter-Substratoberfläche im wesentlichen aus Silizium mit einer darauf aufgebrachten Halbleiterschaltung besteht.
  9. Verfahren gemäß Anspruch 8, dadurch gekennzeichnet, daß die von einem Laser erzeugte Strahlung eine Dauer von ungefähr 6000 Impulsen und eine Energiedichte von ungefähr 35 mJ/cm² hat.
  10. Verfahren gemäß Anspruch 1 zum Entfernen von molekularen Verunreinigungen von der Oberfläche eines Halbleitersubstrats während der Herstellung des Halbleiters, wobei die Substratoberfläche erhalten bleibt, dadurch gekennzeichnet, daß :
    - ein Gas über die Halbleiter-Substratoberfläche strömt, wobei dieses Gas bezüglich der Substratoberfläche inert ist;
    - während das bezüglich der Substratoberfläche interte Gas strömt, das Substrat mit einer von einem Laser erzeugten Strahlung bestrahlt wird, bevor die Schaltung auf der Halbleiter-Substratoberfläche abgeschieden wird, wobei die Energiedichte dieser Strahlung und die Bestrahlungsdauer ausreichen, um die Oberflächenverunreinigungen von der Substratoberfläche abzulösen, aber nicht ausreichen, um die molekulare Struktur der Substratoberfläche zu verändern;
    - eine Schaltungsschicht auf der Halbleiter-Substratoberfläche abgeschieden wird;
    - ein Gas über die abgeschiedene Schicht strömt, das bezüglich der Substratoberfläche und der abgeschiedenen Schicht inert ist;
    - während das bezüglich der Substratoberfläche und der abgeschiedenen Schicht inerte Gas strömt, die Substratoberfläche, nachdem die Schaltung darauf abgeschieden wurde, mit einer von einem Laser erzeugten Strahlung bestrahlt wird, wobei die Energiedichte dieser Strahlung und die Bestrahlungsdauer ausreichen, um die Oberflächenverunreinigungen von der Substratoberfläche abzulösen, aber nicht ausreichen, um die molekulare Struktur der Substratoberfläche zu verändern.
  11. Verfahren gemäß Anspruch 10, dadurch gekennzeichnet, daß die Substratoberfläche im wesentlichen aus Silizium besteht.
  12. Verfahren gemäß Anspruch 10, dadurch gekennzeichnet, daß die von einem Laser erzeugte Strahlung eine Dauer von ungefähr 6000 Impulsen und eine Energiedichte von ungefähr 35 mJ/cm² hat.
  13. Vorrichtung zum Entfernen von adsorbierten Oberflächenverunreinigungen von der Oberfläche eines Substrats (12), wobei die Substratoberfläche erhalten bleibt, aus :
    - einem Gas (18), das bezüglich der Substratoberfläche inert ist;
    - einem Gasströmungsmittel, um das Gas dauernd über die Substratoberfläche strömen zu lassen;
    - einem Laserimpuls-Erzeugungsmittel (14), um Laserimpulse (11) zu erzeugen, die auf die Substratoberfläche auftreffen, über die das Gas (18) strömt, und die eine Energiedichte haben, die ausreicht, um die Bindungen zwischen den adsorbierten Oberflächenverunreinigungen und der Substratoberfläche aufzubrechen, aber nicht ausreicht, um die molekulare Struktur der Substratoberfläche zu verändern.
  14. Vorrichtung gemäß Anspruch 13, dadurch gekennzeichnet, daß das Laserimpuls-Erzeugungsmittel (14) eine Energiequelle für ultraviolette Energie aufweist.
  15. Vorrichtung gemäß Anspruch 13, dadurch gekennzeichnet, daß das Laserimpuls-Erzeugungsmittel (14) ein KrF-Excimerlaser ist.
  16. Vorrichtung gemäß Anspruch 13, dadurch gekennzeichnet, daß das Gasströmungsmittel besteht aus :
    - einem Gehäuse (15), in dem das zu behandelnde Substrat (12) angeordnet werden kann, wobei dieses Gehäuse eine Einlaßöffnung (23) und eine Auslaßöffnung (25) aufweist, und
    - einem Mittel zum Einleiten des Gases in das Gehäuse (15) über die Einlaßöffnung (23).
  17. Vorrichtung gemäß Anspruch 13, dadurch gekennzeichnet, daß das bezüglich der Oberfläche des Substrats (12) inerte Gas ein chemisch inertes Gas ist.
  18. Vorrichtung gemäß Anspruch 17, dadurch gekennzeichnet, daß das chemisch inerte Gas Argon ist.
  19. Vorrichtung gemäß Anspruch 13, dadurch gekennzeichnet, daß sie außerdem ein Gasanalysiermittel (27) zum Analysieren des Gases aufweist, das während der Bestrahlung der Substratoberfläche mit der von einem Laser erzeugten Strahlung über die Substratoberfläche strömte, wobei dieses Gasanalysiermittel (27) vorgesehen ist, um die Zusammensetzung der von der Substratoberfläche entfernten Verunreinigungen zu bestimmen.
  20. Vorrichtung gemäß Anspruch 16, dadurch gekennzeichnet, daß sie außerdem ein Gasanalysiermittel (27) zum Analysieren des Gases aufweist, das während der Bestrahlung der Substratoberfläche mit der von einem Laser erzeugten Strahlung über die Substratoberfläche strömte, wobei dieses Gasanalysiermittel (27) vorgesehen ist, um die Zusammensetzung der von der Substratoberfläche entfernten Verunreinigungen zu bestimmen, und das Gasanalysiermittel (27) an die Gehäuse-Auslaßöffnung (25) angeschlossen ist.
HK5195A 1988-07-08 1995-01-12 Removal of surface contaminants by irradiation from a high-energy source HK5195A (en)

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US (1) US5024968A (de)
EP (1) EP0350021B1 (de)
JP (1) JP2634245B2 (de)
KR (1) KR0157608B1 (de)
AT (1) ATE88923T1 (de)
AU (1) AU620766B2 (de)
BR (1) BR8907529A (de)
CA (1) CA1328908C (de)
DE (1) DE68906318T2 (de)
DK (1) DK303490A (de)
ES (1) ES2041374T3 (de)
FI (1) FI910075A0 (de)
HK (1) HK5195A (de)
LV (1) LV11116B (de)
NO (1) NO180739C (de)
WO (1) WO1990000812A1 (de)

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BR8907529A (pt) 1991-06-11
EP0350021A3 (en) 1990-05-23
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LV11116B (en) 1996-10-20
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EP0350021B1 (de) 1993-05-05
CA1328908C (en) 1994-04-26
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DE68906318D1 (de) 1993-06-09
ATE88923T1 (de) 1993-05-15
ES2041374T3 (es) 1993-11-16
KR0157608B1 (ko) 1998-12-01
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AU3867689A (en) 1990-02-05
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EP0350021A2 (de) 1990-01-10

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