IT1205941B - Procedimento e struttura di masche ramento per ricavare strette aperture nella superficie di un materiale mediante attacco chimico particolarmente nella fabbricazione di dispositivi semiconduttori - Google Patents

Procedimento e struttura di masche ramento per ricavare strette aperture nella superficie di un materiale mediante attacco chimico particolarmente nella fabbricazione di dispositivi semiconduttori

Info

Publication number
IT1205941B
IT1205941B IT6823676A IT6823676A IT1205941B IT 1205941 B IT1205941 B IT 1205941B IT 6823676 A IT6823676 A IT 6823676A IT 6823676 A IT6823676 A IT 6823676A IT 1205941 B IT1205941 B IT 1205941B
Authority
IT
Italy
Prior art keywords
etching
group
lateral edge
prodn
openings
Prior art date
Application number
IT6823676A
Other languages
English (en)
Original Assignee
Fairchild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/619,735 external-priority patent/US4063992A/en
Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co
Application granted granted Critical
Publication of IT1205941B publication Critical patent/IT1205941B/it

Links

Landscapes

  • Drying Of Semiconductors (AREA)
IT6823676A 1975-10-06 1976-05-20 Procedimento e struttura di masche ramento per ricavare strette aperture nella superficie di un materiale mediante attacco chimico particolarmente nella fabbricazione di dispositivi semiconduttori IT1205941B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/619,735 US4063992A (en) 1975-05-27 1975-10-06 Edge etch method for producing narrow openings to the surface of materials

Publications (1)

Publication Number Publication Date
IT1205941B true IT1205941B (it) 1989-03-31

Family

ID=24483087

Family Applications (1)

Application Number Title Priority Date Filing Date
IT6823676A IT1205941B (it) 1975-10-06 1976-05-20 Procedimento e struttura di masche ramento per ricavare strette aperture nella superficie di un materiale mediante attacco chimico particolarmente nella fabbricazione di dispositivi semiconduttori

Country Status (1)

Country Link
IT (1) IT1205941B (it)

Similar Documents

Publication Publication Date Title
GB1534475A (en) Etching of polymeric materials
GB1096484A (en) Improvements in or relating to semiconductor circuits
GB1537306A (en) Processing epitaxial layers
GB1487201A (en) Method of manufacturing semi-conductor devices
IT1205941B (it) Procedimento e struttura di masche ramento per ricavare strette aperture nella superficie di un materiale mediante attacco chimico particolarmente nella fabbricazione di dispositivi semiconduttori
JPS5331964A (en) Production of semiconductor substrates
GB1388535A (en) Electrical solid-state devices
JPS5325350A (en) Dicing method of semiconductor substrates
JPS5793545A (en) Manufacture of semiconductor device
JPS5451383A (en) Production of semiconductor element
JPS51112277A (en) Semiconductor device and its production method
JPS5745256A (en) Manufacture of semiconductor device
JPS51147963A (en) Method of manufacturing a semiconductor device
JPS5211862A (en) Semiconductor device
JPS5353988A (en) Semiconductor integrated circuit
JPS5362990A (en) Production of semiconductor device
JPS5455379A (en) Production of mesa type semiconductor device
JPS5381095A (en) Thin film formation method of semiconductor integrated circuit
FR2149384A1 (en) Semiconductor component prodn - with automatic precision mask location esp for fets
JPS5226162A (en) Manufacturing method of semi-conductor crystal
JPS5648151A (en) Wiring formation of semiconductor device
JPS5380167A (en) Manufacture of semiconductor device
JPS53119669A (en) Production of semiconductor device
JPS5779633A (en) Manufacture of semiconductor device
JPS5265680A (en) Mesa type semiconductor device