IT9048323A0 - Condensatore impilato di una cella dram e procedimento per questo. - Google Patents
Condensatore impilato di una cella dram e procedimento per questo.Info
- Publication number
- IT9048323A0 IT9048323A0 IT9048323A IT4832390A IT9048323A0 IT 9048323 A0 IT9048323 A0 IT 9048323A0 IT 9048323 A IT9048323 A IT 9048323A IT 4832390 A IT4832390 A IT 4832390A IT 9048323 A0 IT9048323 A0 IT 9048323A0
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- dram cell
- stacked capacitor
- capacitor
- stacked
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900009726A KR930007192B1 (ko) | 1990-06-29 | 1990-06-29 | 디램셀의 적층형캐패시터 및 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9048323A0 true IT9048323A0 (it) | 1990-09-28 |
| IT9048323A1 IT9048323A1 (it) | 1992-03-28 |
| IT1242357B IT1242357B (it) | 1994-03-04 |
Family
ID=19300626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT48323A IT1242357B (it) | 1990-06-29 | 1990-09-28 | Condensatore impilato di una cella dram e procedimento per questo. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5187548A (it) |
| JP (1) | JP2538119B2 (it) |
| KR (1) | KR930007192B1 (it) |
| DE (1) | DE4029256C2 (it) |
| FR (1) | FR2664098B1 (it) |
| GB (1) | GB2245761B (it) |
| IT (1) | IT1242357B (it) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04147669A (ja) * | 1990-10-09 | 1992-05-21 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
| US5223083A (en) * | 1992-01-23 | 1993-06-29 | Micron Technology, Inc. | Process for etching a semiconductor device using an improved protective etching mask |
| US5525534A (en) * | 1992-03-13 | 1996-06-11 | Fujitsu Limited | Method of producing a semiconductor device using a reticle having a polygonal shaped hole |
| KR960016486B1 (ko) * | 1993-08-31 | 1996-12-12 | 현대전자산업 주식회사 | 디램 캐패시터 및 그 제조방법 |
| JPH07161832A (ja) * | 1993-12-08 | 1995-06-23 | Oki Electric Ind Co Ltd | 半導体記憶装置およびその製造方法 |
| US5436186A (en) * | 1994-04-22 | 1995-07-25 | United Microelectronics Corporation | Process for fabricating a stacked capacitor |
| US5460999A (en) * | 1994-06-06 | 1995-10-24 | United Microelectronics Corporation | Method for making fin-shaped stack capacitors on DRAM chips |
| US5981992A (en) * | 1995-06-07 | 1999-11-09 | International Business Machines Corporation | Mechanical supports for very thin stacked capacitor plates |
| US5946566A (en) * | 1996-03-01 | 1999-08-31 | Ace Memory, Inc. | Method of making a smaller geometry high capacity stacked DRAM device |
| US5926718A (en) * | 1996-08-20 | 1999-07-20 | Micron Technology, Inc. | Method for forming a capacitor |
| DE19640271C1 (de) | 1996-09-30 | 1998-03-05 | Siemens Ag | Verfahren zur Herstellung einer integrierten Halbleiterspeicheranordnung |
| US5712813A (en) * | 1996-10-17 | 1998-01-27 | Zhang; Guobiao | Multi-level storage capacitor structure with improved memory density |
| DE19705530C2 (de) * | 1997-02-13 | 1999-03-11 | Siemens Ag | Verfahren zur Erzeugung eines Kontaktes und eines Kondensators in einem Halblieterbauelement |
| KR19990038862A (ko) * | 1997-11-07 | 1999-06-05 | 성재갑 | 안료를 함유한 수중실리콘 유화형 화장료 조성물 |
| KR100334575B1 (ko) * | 1999-07-05 | 2002-05-03 | 윤종용 | 반도체 메모리 제조 방법 |
| KR100327709B1 (ko) * | 1999-12-23 | 2002-03-09 | 성재갑 | 왁스를 함유하지 않는 오일-프리형 실리콘중수 유화형화장료 조성물 |
| US6800890B1 (en) * | 2002-12-30 | 2004-10-05 | Infineon Technologies Aktiengesellschaft | Memory architecture with series grouped by cells |
| US8169014B2 (en) * | 2006-01-09 | 2012-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitive structure for an integrated circuit |
| KR101934426B1 (ko) * | 2012-11-26 | 2019-01-03 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| US9959974B2 (en) * | 2015-02-27 | 2018-05-01 | The United States Of America As Represented By The Secretary Of The Army | Method for making a structural capacitor |
| US10622318B2 (en) * | 2017-04-26 | 2020-04-14 | Advanced Semiconductor Engineering Korea, Inc. | Semiconductor package device and method of manufacturing the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59231851A (ja) * | 1983-06-14 | 1984-12-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリセル |
| JPH0682783B2 (ja) * | 1985-03-29 | 1994-10-19 | 三菱電機株式会社 | 容量およびその製造方法 |
| DE3856143T2 (de) * | 1987-06-17 | 1998-10-29 | Fujitsu Ltd | Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff |
| KR910009805B1 (ko) * | 1987-11-25 | 1991-11-30 | 후지쓰 가부시끼가이샤 | 다이나믹 랜덤 액세스 메모리 장치와 그의 제조방법 |
| JPH01265556A (ja) * | 1988-04-15 | 1989-10-23 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| KR910010167B1 (ko) * | 1988-06-07 | 1991-12-17 | 삼성전자 주식회사 | 스택 캐패시터 dram셀 및 그의 제조방법 |
| JPH0240949A (ja) * | 1988-07-30 | 1990-02-09 | Sony Corp | メモリ装置 |
| EP0370407A1 (en) * | 1988-11-18 | 1990-05-30 | Nec Corporation | Semiconductor memory device of one transistor - one capacitor memory cell type |
| US5006481A (en) * | 1989-11-30 | 1991-04-09 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked capacitor DRAM cell |
| JPH03173176A (ja) * | 1989-11-30 | 1991-07-26 | Sharp Corp | 半導体記憶装置 |
-
1990
- 1990-06-29 KR KR1019900009726A patent/KR930007192B1/ko not_active Expired - Lifetime
- 1990-09-14 DE DE4029256A patent/DE4029256C2/de not_active Expired - Lifetime
- 1990-09-20 FR FR9011609A patent/FR2664098B1/fr not_active Expired - Lifetime
- 1990-09-28 IT IT48323A patent/IT1242357B/it active IP Right Grant
- 1990-09-28 JP JP2257565A patent/JP2538119B2/ja not_active Expired - Lifetime
- 1990-09-28 GB GB9021200A patent/GB2245761B/en not_active Expired - Lifetime
- 1990-09-28 US US07/589,621 patent/US5187548A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5187548A (en) | 1993-02-16 |
| DE4029256C2 (de) | 1994-02-03 |
| KR930007192B1 (ko) | 1993-07-31 |
| KR920001761A (ko) | 1992-01-30 |
| FR2664098B1 (fr) | 1997-07-04 |
| FR2664098A1 (fr) | 1992-01-03 |
| JP2538119B2 (ja) | 1996-09-25 |
| IT9048323A1 (it) | 1992-03-28 |
| IT1242357B (it) | 1994-03-04 |
| GB2245761B (en) | 1994-11-23 |
| GB9021200D0 (en) | 1990-11-14 |
| DE4029256A1 (de) | 1992-01-09 |
| JPH0461159A (ja) | 1992-02-27 |
| GB2245761A (en) | 1992-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970829 |