|
US6045610A
(en)
*
|
1997-02-13 |
2000-04-04 |
Samsung Electronics Co., Ltd. |
Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
|
|
SG64470A1
(en)
|
1997-02-13 |
1999-04-27 |
Samsung Electronics Co Ltd |
Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
|
|
US6503594B2
(en)
|
1997-02-13 |
2003-01-07 |
Samsung Electronics Co., Ltd. |
Silicon wafers having controlled distribution of defects and slip
|
|
US6485807B1
(en)
|
1997-02-13 |
2002-11-26 |
Samsung Electronics Co., Ltd. |
Silicon wafers having controlled distribution of defects, and methods of preparing the same
|
|
US5994761A
(en)
*
|
1997-02-26 |
1999-11-30 |
Memc Electronic Materials Spa |
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
|
|
US6190631B1
(en)
|
1997-04-09 |
2001-02-20 |
Memc Electronic Materials, Inc. |
Low defect density, ideal oxygen precipitating silicon
|
|
EP0973963B1
(en)
|
1997-04-09 |
2002-06-19 |
MEMC Electronic Materials, Inc. |
Low defect density silicon
|
|
US6379642B1
(en)
*
|
1997-04-09 |
2002-04-30 |
Memc Electronic Materials, Inc. |
Vacancy dominated, defect-free silicon
|
|
JPH1179889A
(ja)
*
|
1997-07-09 |
1999-03-23 |
Shin Etsu Handotai Co Ltd |
結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
|
|
KR100395181B1
(ko)
*
|
1997-08-26 |
2003-08-21 |
미츠비시 스미토모 실리콘 주식회사 |
고품질 실리콘 단결정 및 그 제조방법
|
|
US6340392B1
(en)
|
1997-10-24 |
2002-01-22 |
Samsung Electronics Co., Ltd. |
Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
|
|
JP3346249B2
(ja)
*
|
1997-10-30 |
2002-11-18 |
信越半導体株式会社 |
シリコンウエーハの熱処理方法及びシリコンウエーハ
|
|
JP3407629B2
(ja)
*
|
1997-12-17 |
2003-05-19 |
信越半導体株式会社 |
シリコン単結晶ウエーハの熱処理方法ならびにシリコン単結晶ウエーハ
|
|
JP3955375B2
(ja)
*
|
1998-01-19 |
2007-08-08 |
信越半導体株式会社 |
シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
|
|
JPH11349393A
(ja)
*
|
1998-06-03 |
1999-12-21 |
Shin Etsu Handotai Co Ltd |
シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
|
|
JP3943717B2
(ja)
*
|
1998-06-11 |
2007-07-11 |
信越半導体株式会社 |
シリコン単結晶ウエーハ及びその製造方法
|
|
DE69901115T2
(de)
|
1998-06-26 |
2002-12-19 |
Memc Electronic Materials, Inc. |
Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
|
|
EP1114454A2
(en)
*
|
1998-09-02 |
2001-07-11 |
MEMC Electronic Materials, Inc. |
Silicon on insulator structure from low defect density single crystal silicon
|
|
JP4405082B2
(ja)
*
|
1998-09-02 |
2010-01-27 |
エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド |
内部ゲッタリング性の改良された熱アニーリングされたウエハ
|
|
US6191010B1
(en)
|
1998-09-02 |
2001-02-20 |
Memc Electronic Materials, Inc. |
Process for preparing an ideal oxygen precipitating silicon wafer
|
|
US6312516B2
(en)
*
|
1998-10-14 |
2001-11-06 |
Memc Electronic Materials, Inc. |
Process for preparing defect free silicon crystals which allows for variability in process conditions
|
|
WO2000022197A1
(en)
*
|
1998-10-14 |
2000-04-20 |
Memc Electronic Materials, Inc. |
Epitaxial silicon wafers substantially free of grown-in defects
|
|
US6416836B1
(en)
|
1998-10-14 |
2002-07-09 |
Memc Electronic Materials, Inc. |
Thermally annealed, low defect density single crystal silicon
|
|
JP4233651B2
(ja)
*
|
1998-10-29 |
2009-03-04 |
信越半導体株式会社 |
シリコン単結晶ウエーハ
|
|
JP2000154070A
(ja)
*
|
1998-11-16 |
2000-06-06 |
Suminoe Textile Co Ltd |
セラミックス三次元構造体及びその製造方法
|
|
TW505710B
(en)
*
|
1998-11-20 |
2002-10-11 |
Komatsu Denshi Kinzoku Kk |
Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
|
|
US6284384B1
(en)
*
|
1998-12-09 |
2001-09-04 |
Memc Electronic Materials, Inc. |
Epitaxial silicon wafer with intrinsic gettering
|
|
KR20010083771A
(ko)
*
|
1998-12-28 |
2001-09-01 |
와다 다다시 |
실리콘 웨이퍼의 열처리 방법 및 실리콘 웨이퍼
|
|
JP3601340B2
(ja)
*
|
1999-02-01 |
2004-12-15 |
信越半導体株式会社 |
エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板
|
|
US6458202B1
(en)
*
|
1999-09-02 |
2002-10-01 |
Memc Electronic Materials, Inc. |
Process for preparing single crystal silicon having uniform thermal history
|
|
US6635587B1
(en)
*
|
1999-09-23 |
2003-10-21 |
Memc Electronic Materials, Inc. |
Method for producing czochralski silicon free of agglomerated self-interstitial defects
|
|
WO2001021861A1
(en)
*
|
1999-09-23 |
2001-03-29 |
Memc Electronic Materials, Inc. |
Czochralski process for growing single crystal silicon by controlling the cooling rate
|
|
US6391662B1
(en)
*
|
1999-09-23 |
2002-05-21 |
Memc Electronic Materials, Inc. |
Process for detecting agglomerated intrinsic point defects by metal decoration
|
|
KR100730806B1
(ko)
*
|
1999-10-14 |
2007-06-20 |
신에쯔 한도타이 가부시키가이샤 |
Soi웨이퍼의 제조방법 및 soi 웨이퍼
|
|
JP2001118801A
(ja)
*
|
1999-10-18 |
2001-04-27 |
Mitsubishi Materials Silicon Corp |
エピタキシャルウェーハ用基板およびこれを用いた半導体装置
|
|
JP3901092B2
(ja)
*
|
2000-06-30 |
2007-04-04 |
信越半導体株式会社 |
シリコン単結晶の製造方法
|
|
UA49103C2
(uk)
*
|
2000-08-21 |
2002-09-16 |
Закрите Акціонерне Товариство "Піллар" |
Спосіб виділення частини зливка вирощеного монокристала кремнію з заданою концентрацією домішки вуглецю
|
|
KR100374703B1
(ko)
*
|
2000-09-04 |
2003-03-04 |
주식회사 실트론 |
단결정 실리콘 웨이퍼,잉곳 및 그 제조방법
|
|
EP1669478B1
(en)
*
|
2000-09-19 |
2010-03-17 |
MEMC Electronic Materials, Inc. |
Nitrogen-doped silicon substantially free of oxidation induced stacking faults
|
|
EP1325178B1
(en)
*
|
2000-09-19 |
2005-11-16 |
MEMC Electronic Materials, Inc. |
Nitrogen-doped silicon substantially free of oxidation induced stacking faults
|
|
US6663708B1
(en)
*
|
2000-09-22 |
2003-12-16 |
Mitsubishi Materials Silicon Corporation |
Silicon wafer, and manufacturing method and heat treatment method of the same
|
|
KR20020024368A
(ko)
*
|
2000-09-25 |
2002-03-30 |
가와이 겐이찌 |
실리콘 웨이퍼
|
|
DE10066099B4
(de)
*
|
2000-09-25 |
2008-11-20 |
Mitsubishi Materials Silicon Corp. |
Wärmebehandlungsverfahren für einen Siliciumwafer
|
|
US6689209B2
(en)
*
|
2000-11-03 |
2004-02-10 |
Memc Electronic Materials, Inc. |
Process for preparing low defect density silicon using high growth rates
|
|
CN1280456C
(zh)
*
|
2000-11-03 |
2006-10-18 |
Memc电子材料有限公司 |
生产低缺陷密度硅的方法
|
|
US7105050B2
(en)
|
2000-11-03 |
2006-09-12 |
Memc Electronic Materials, Inc. |
Method for the production of low defect density silicon
|
|
US6858307B2
(en)
|
2000-11-03 |
2005-02-22 |
Memc Electronic Materials, Inc. |
Method for the production of low defect density silicon
|
|
US20110263126A1
(en)
|
2000-11-22 |
2011-10-27 |
Sumco Corporation |
Method for manufacturing a silicon wafer
|
|
CN1478156A
(zh)
*
|
2000-11-30 |
2004-02-25 |
Memc电子材料有限公司 |
用于控制空位为主的单晶硅热过程的方法
|
|
US20040055527A1
(en)
*
|
2000-11-30 |
2004-03-25 |
Makoto Kojima |
Process for controlling thermal history of vacancy-dominated, single crystal silicon
|
|
US7008874B2
(en)
*
|
2000-12-19 |
2006-03-07 |
Memc Electronics Materials, Inc. |
Process for reclaiming semiconductor wafers and reclaimed wafers
|
|
JP3624827B2
(ja)
|
2000-12-20 |
2005-03-02 |
三菱住友シリコン株式会社 |
シリコン単結晶の製造方法
|
|
JP3994665B2
(ja)
*
|
2000-12-28 |
2007-10-24 |
信越半導体株式会社 |
シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
|
|
US20020084451A1
(en)
*
|
2000-12-29 |
2002-07-04 |
Mohr Thomas C. |
Silicon wafers substantially free of oxidation induced stacking faults
|
|
KR100708789B1
(ko)
|
2001-01-02 |
2007-04-19 |
엠이엠씨 일렉트로닉 머티리얼즈, 인크. |
향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정
|
|
CN100348782C
(zh)
*
|
2001-01-26 |
2007-11-14 |
Memc电子材料有限公司 |
具有基本上没有氧化诱生堆垛层错的空位为主的芯的低缺陷密度硅
|
|
US6743495B2
(en)
|
2001-03-30 |
2004-06-01 |
Memc Electronic Materials, Inc. |
Thermal annealing process for producing silicon wafers with improved surface characteristics
|
|
US6649883B2
(en)
*
|
2001-04-12 |
2003-11-18 |
Memc Electronic Materials, Inc. |
Method of calibrating a semiconductor wafer drying apparatus
|
|
EP1710830A3
(en)
*
|
2001-06-22 |
2007-11-28 |
MEMC Electronic Materials, Inc. |
Silicon on insulator structure having intrinsic gettering
|
|
TW550681B
(en)
*
|
2001-06-22 |
2003-09-01 |
Memc Electronic Materials |
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
|
|
US20030033972A1
(en)
*
|
2001-08-15 |
2003-02-20 |
Memc Electronic Materials, Inc. |
Controlled crown growth process for czochralski single crystal silicon
|
|
US20030047130A1
(en)
*
|
2001-08-29 |
2003-03-13 |
Memc Electronic Materials, Inc. |
Process for eliminating neck dislocations during czochralski crystal growth
|
|
JP4567251B2
(ja)
*
|
2001-09-14 |
2010-10-20 |
シルトロニック・ジャパン株式会社 |
シリコン半導体基板およびその製造方法
|
|
US6866713B2
(en)
*
|
2001-10-26 |
2005-03-15 |
Memc Electronic Materials, Inc. |
Seed crystals for pulling single crystal silicon
|
|
US6669775B2
(en)
|
2001-12-06 |
2003-12-30 |
Seh America, Inc. |
High resistivity silicon wafer produced by a controlled pull rate czochralski method
|
|
JP4092946B2
(ja)
*
|
2002-05-09 |
2008-05-28 |
信越半導体株式会社 |
シリコン単結晶ウエーハ及びエピタキシャルウエーハ並びにシリコン単結晶の製造方法
|
|
TWI231357B
(en)
*
|
2002-10-18 |
2005-04-21 |
Sumitomo Mitsubishi Silicon |
Method for measuring defect-distribution in silicon monocrystal ingot
|
|
US8147613B2
(en)
*
|
2002-11-12 |
2012-04-03 |
Memc Electronic Materials, Inc. |
Crystal puller and method for growing a monocrystalline ingot
|
|
KR100764394B1
(ko)
|
2002-11-12 |
2007-10-05 |
엠이엠씨 일렉트로닉 머티리얼즈, 인크. |
도가니 회전을 이용하여 온도 구배를 제어하는 단결정 실리콘의 제조 방법
|
|
JP4382438B2
(ja)
*
|
2002-11-14 |
2009-12-16 |
株式会社東芝 |
半導体ウェーハの検査方法、半導体装置の開発方法、半導体装置の製造方法、および半導体ウェーハ処理装置
|
|
JP2004172391A
(ja)
*
|
2002-11-20 |
2004-06-17 |
Sumitomo Mitsubishi Silicon Corp |
シリコンウェーハおよびその製造方法
|
|
US6916324B2
(en)
*
|
2003-02-04 |
2005-07-12 |
Zimmer Technology, Inc. |
Provisional orthopedic prosthesis for partially resected bone
|
|
US7704318B2
(en)
*
|
2003-02-25 |
2010-04-27 |
Sumco Corporation |
Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate
|
|
JP4151474B2
(ja)
*
|
2003-05-13 |
2008-09-17 |
信越半導体株式会社 |
単結晶の製造方法及び単結晶
|
|
US7559326B2
(en)
|
2003-06-18 |
2009-07-14 |
Resmed Limited |
Vent and/or diverter assembly for use in breathing apparatus
|
|
JP2005015313A
(ja)
*
|
2003-06-27 |
2005-01-20 |
Shin Etsu Handotai Co Ltd |
単結晶の製造方法及び単結晶
|
|
US6955718B2
(en)
*
|
2003-07-08 |
2005-10-18 |
Memc Electronic Materials, Inc. |
Process for preparing a stabilized ideal oxygen precipitating silicon wafer
|
|
KR100531552B1
(ko)
|
2003-09-05 |
2005-11-28 |
주식회사 하이닉스반도체 |
실리콘 웨이퍼 및 그 제조방법
|
|
JP4432458B2
(ja)
*
|
2003-10-30 |
2010-03-17 |
信越半導体株式会社 |
単結晶の製造方法
|
|
US7074271B2
(en)
*
|
2004-02-23 |
2006-07-11 |
Sumitomo Mitsubishi Silicon Corporation |
Method of identifying defect distribution in silicon single crystal ingot
|
|
KR100788018B1
(ko)
|
2004-11-29 |
2007-12-21 |
주식회사 실트론 |
실리콘 단결정 잉곳 및 그로부터 제조된 실리콘 웨이퍼
|
|
KR100709798B1
(ko)
*
|
2004-10-19 |
2007-04-23 |
주식회사 실트론 |
고품질 단결정 성장 방법
|
|
US7416603B2
(en)
*
|
2004-10-19 |
2008-08-26 |
Siltron Inc. |
High quality single crystal and method of growing the same
|
|
GB0424505D0
(en)
*
|
2004-11-05 |
2004-12-08 |
Gr Advanced Materials Ltd |
Emulsion ink
|
|
US7371283B2
(en)
*
|
2004-11-23 |
2008-05-13 |
Siltron Inc. |
Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
|
|
KR100714215B1
(ko)
|
2004-11-23 |
2007-05-02 |
주식회사 실트론 |
고품질 실리콘 단결정 잉곳 및 그로부터 제조된 고 품질 실리콘 웨이퍼
|
|
US20060138601A1
(en)
*
|
2004-12-27 |
2006-06-29 |
Memc Electronic Materials, Inc. |
Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafers
|
|
KR100840751B1
(ko)
*
|
2005-07-26 |
2008-06-24 |
주식회사 실트론 |
고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼
|
|
JP4743010B2
(ja)
*
|
2005-08-26 |
2011-08-10 |
株式会社Sumco |
シリコンウェーハの表面欠陥評価方法
|
|
KR100831044B1
(ko)
*
|
2005-09-21 |
2008-05-21 |
주식회사 실트론 |
고품질 실리콘 단결정 잉곳의 성장장치, 그 장치를 이용한성장방법
|
|
US7633307B2
(en)
*
|
2005-12-16 |
2009-12-15 |
Freescale Semiconductor, Inc. |
Method for determining temperature profile in semiconductor manufacturing test
|
|
US7427325B2
(en)
|
2005-12-30 |
2008-09-23 |
Siltron, Inc. |
Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
|
|
JP2007194232A
(ja)
*
|
2006-01-17 |
2007-08-02 |
Shin Etsu Handotai Co Ltd |
シリコン単結晶ウエーハの製造方法
|
|
JP4853027B2
(ja)
*
|
2006-01-17 |
2012-01-11 |
信越半導体株式会社 |
シリコン単結晶ウエーハの製造方法
|
|
US8673248B2
(en)
*
|
2006-05-19 |
2014-03-18 |
Memc Electronic Materials, Inc. |
Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface
|
|
DE102006034786B4
(de)
|
2006-07-27 |
2011-01-20 |
Siltronic Ag |
Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zur Ausheilung GOI-relevanter Defekte in einer monokristallinen Halbleiterscheibe
|
|
US7560355B2
(en)
*
|
2006-10-24 |
2009-07-14 |
Vishay General Semiconductor Llc |
Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same
|
|
JP2009292662A
(ja)
*
|
2008-06-03 |
2009-12-17 |
Sumco Corp |
シリコン単結晶育成における肩形成方法
|
|
JP2009292663A
(ja)
*
|
2008-06-03 |
2009-12-17 |
Sumco Corp |
シリコン単結晶の育成方法
|
|
JP2010040587A
(ja)
*
|
2008-07-31 |
2010-02-18 |
Covalent Materials Corp |
シリコンウェーハの製造方法
|
|
IL204034A
(en)
*
|
2009-02-24 |
2015-05-31 |
Schott Ag |
Photovoltaic device with central optics
|
|
KR101275418B1
(ko)
*
|
2010-03-16 |
2013-06-14 |
주식회사 엘지실트론 |
단결정 잉곳 제조방법 및 이에 의해 제조된 웨이퍼
|
|
CN101824649A
(zh)
*
|
2010-04-30 |
2010-09-08 |
中山大学 |
自动化光电晶体炉的生长前阶段控制方法
|
|
JP2012166979A
(ja)
*
|
2011-02-14 |
2012-09-06 |
Sumco Corp |
多結晶シリコンの電磁鋳造方法および電磁鋳造装置
|
|
JP5733245B2
(ja)
*
|
2012-03-16 |
2015-06-10 |
信越半導体株式会社 |
シリコン単結晶ウェーハの製造方法
|
|
CN102978688B
(zh)
*
|
2012-11-16 |
2015-07-08 |
晶科能源有限公司 |
一种直拉单晶法的冷却工艺
|
|
FR3005966B1
(fr)
*
|
2013-05-27 |
2016-12-30 |
Commissariat Energie Atomique |
Procede de fabrication d'un lingot de silicium par reprise sur germes en four de solidification dirigee
|
|
FR3005967B1
(fr)
*
|
2013-05-27 |
2017-06-02 |
Commissariat Energie Atomique |
Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques
|
|
US9634098B2
(en)
|
2013-06-11 |
2017-04-25 |
SunEdison Semiconductor Ltd. (UEN201334164H) |
Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
|
|
US20150243494A1
(en)
*
|
2014-02-25 |
2015-08-27 |
Texas Instruments Incorporated |
Mechanically robust silicon substrate having group iiia-n epitaxial layer thereon
|
|
US11111602B2
(en)
|
2014-07-31 |
2021-09-07 |
Globalwafers Co., Ltd. |
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
|
|
DE102015224983B4
(de)
|
2015-12-11 |
2019-01-24 |
Siltronic Ag |
Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung
|
|
DE102015226399A1
(de)
|
2015-12-22 |
2017-06-22 |
Siltronic Ag |
Siliciumscheibe mit homogener radialer Sauerstoffvariation
|
|
CN109346433B
(zh)
|
2018-09-26 |
2020-10-23 |
上海新傲科技股份有限公司 |
半导体衬底的键合方法以及键合后的半导体衬底
|
|
CN113825862B
(zh)
|
2019-04-11 |
2024-12-10 |
环球晶圆股份有限公司 |
后段主体长度具有减小变形的锭的制备工艺
|
|
SG11202111451WA
(en)
|
2019-04-18 |
2021-11-29 |
Globalwafers Co Ltd |
Methods for growing a single crystal silicon ingot using continuous czochralski method
|
|
EP4245895A3
(en)
|
2019-09-13 |
2023-11-15 |
GlobalWafers Co., Ltd. |
Method for growing a nitrogen doped single crystal silicon ingot using continuous czochralski method and a single crystal silicon ingot grown by this method
|
|
EP3929334A1
(de)
|
2020-06-23 |
2021-12-29 |
Siltronic AG |
Verfahren zur herstellung von halbleiterscheiben
|
|
FI3940124T3
(fi)
|
2020-07-14 |
2024-04-03 |
Siltronic Ag |
Kidekappale yksikiteisestä piistä
|
|
EP4018019B1
(de)
*
|
2020-07-21 |
2022-12-21 |
Wacker Chemie AG |
Verfahren zur bestimmung von spurenmetallen in silicium
|
|
KR102255421B1
(ko)
*
|
2020-08-11 |
2021-05-24 |
충남대학교산학협력단 |
단결정 산화갈륨의 결함 평가방법
|
|
CN113138195A
(zh)
*
|
2021-04-16 |
2021-07-20 |
上海新昇半导体科技有限公司 |
晶体缺陷的监控方法及晶棒生长方法
|
|
US20220359195A1
(en)
*
|
2021-05-05 |
2022-11-10 |
Globalwafers Co., Ltd. |
Methods for forming an epitaxial wafer
|
|
CN113703411B
(zh)
*
|
2021-08-31 |
2022-08-30 |
亚洲硅业(青海)股份有限公司 |
多晶硅生长过程监测系统、方法及多晶硅生产系统
|
|
EP4459013A4
(en)
*
|
2021-12-27 |
2026-03-18 |
Zhonghuan Advanced Semiconductor Tech Co Ltd |
METHOD FOR PREPARING SINGLE CRYSTALS AND SILICON CRYSTALS
|
|
CN114318500B
(zh)
*
|
2022-01-05 |
2023-08-22 |
西安奕斯伟材料科技股份有限公司 |
一种用于拉制单晶硅棒的拉晶炉、方法及单晶硅棒
|
|
CN115233296A
(zh)
*
|
2022-07-25 |
2022-10-25 |
北京麦竹吉科技有限公司 |
一种加热器、拉晶炉和消除大直径单晶硅自我间隙缺陷的方法
|
|
EP4321656A1
(de)
|
2022-08-09 |
2024-02-14 |
Siltronic AG |
Verfahren zum herstellen eines monokristallinen kristalls aus silizium
|
|
CN116145240A
(zh)
*
|
2022-12-30 |
2023-05-23 |
上海新昇半导体科技有限公司 |
一种晶体生长的控制方法、装置、系统及计算机存储介质
|
|
CN117089923A
(zh)
*
|
2023-09-26 |
2023-11-21 |
宁夏中欣晶圆半导体科技有限公司 |
改善半导体硅单晶棒微缺陷的拉晶方法及单晶晶棒
|
|
CN117418301A
(zh)
*
|
2023-10-26 |
2024-01-19 |
宁夏中欣晶圆半导体科技有限公司 |
降低晶棒中点缺陷的拉晶方法及单晶晶棒
|
|
US20250293073A1
(en)
|
2024-03-18 |
2025-09-18 |
Globalwafers Co., Ltd. |
Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structures
|