JP2004363443A5 - - Google Patents

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Publication number: JP2004363443A5
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2003162019A

Other versions

JP2004363443A (ja

Filing date

2003-06-06

Publication date

2005-11-24

2003-06-06 Application filed filed Critical

2003-06-06 Priority to JP2003162019A priority Critical patent/JP2004363443A/ja

2003-06-06 Priority claimed from JP2003162019A external-priority patent/JP2004363443A/ja

2004-06-04 Priority to US10/860,014 priority patent/US7238975B2/en

2004-12-24 Publication of JP2004363443A publication Critical patent/JP2004363443A/ja

2005-11-24 Publication of JP2004363443A5 publication Critical patent/JP2004363443A5/ja

2007-04-09 Priority to US11/783,368 priority patent/US20070190727A1/en

Status Pending legal-status Critical Current

Links

JP2003162019A 2003-06-06 2003-06-06 不揮発性半導体記憶装置及びその製造方法 Pending JP2004363443A (ja)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
JP2003162019A JP2004363443A (ja)	2003-06-06	2003-06-06	不揮発性半導体記憶装置及びその製造方法
US10/860,014 US7238975B2 (en)	2003-06-06	2004-06-04	Nonvolatile semiconductor memory device and manufacturing method therefor
US11/783,368 US20070190727A1 (en)	2003-06-06	2007-04-09	Nonvolatile semiconductor memory device and manufacturing method therefor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2003162019A JP2004363443A (ja)	2003-06-06	2003-06-06	不揮発性半導体記憶装置及びその製造方法

Publications (2)

Publication Number	Publication Date
JP2004363443A JP2004363443A (ja)	2004-12-24
JP2004363443A5 true JP2004363443A5 (ja)	2005-11-24

Family

ID=34054281

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2003162019A Pending JP2004363443A (ja)	2003-06-06	2003-06-06	不揮発性半導体記憶装置及びその製造方法

Country Status (2)

Country	Link
US (2)	US7238975B2 (ja)
JP (1)	JP2004363443A (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100843244B1 (ko) *	2007-04-19	2008-07-02	삼성전자주식회사	반도체 소자 및 그 제조 방법
US7812375B2 (en)	2003-05-28	2010-10-12	Samsung Electronics Co., Ltd.	Non-volatile memory device and method of fabricating the same
KR100577225B1 (ko) *	2004-12-29	2006-05-26	동부일렉트로닉스 주식회사	이이피롬(ｅｅｐｒｏｍ), 이의 제조 방법 및 이의프로그램/소거 방법
US20070085129A1 (en) *	2005-10-14	2007-04-19	Macronix International Co., Ltd.	Nitride read only memory device with buried diffusion spacers and method for making the same
JP4791799B2 (ja)	2005-11-07	2011-10-12	株式会社東芝	半導体記憶装置及びその製造方法
KR100953049B1 (ko) *	2007-12-28	2010-04-14	주식회사 하이닉스반도체	플래시 메모리 소자 및 그의 제조 방법
KR20090078165A (ko) *	2008-01-14	2009-07-17	주식회사 하이닉스반도체	플래시 메모리 소자의 형성 방법
JP2010045175A (ja) *	2008-08-12	2010-02-25	Toshiba Corp	不揮発性半導体記憶装置
JP5356005B2 (ja) *	2008-12-10	2013-12-04	株式会社東芝	不揮発性半導体記憶装置及びその製造方法
JP2010147241A (ja) *	2008-12-18	2010-07-01	Toshiba Corp	不揮発性半導体記憶装置
JP2010219099A (ja) *	2009-03-13	2010-09-30	Toshiba Corp	不揮発性半導体記憶装置及びその製造方法
US20150050788A1 (en) *	2011-02-15	2015-02-19	Contour Semiconductor, Inc.	Current steering element formation for memory arrays

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US5104819A (en) *	1989-08-07	1992-04-14	Intel Corporation	Fabrication of interpoly dielctric for EPROM-related technologies
JPH07115144A (ja)	1993-10-15	1995-05-02	Sony Corp	半導体不揮発性記憶装置
JP2924622B2 (ja) *	1993-12-28	1999-07-26	日本電気株式会社	半導体装置の製造方法
US5446299A (en) *	1994-04-29	1995-08-29	International Business Machines Corporation	Semiconductor random access memory cell on silicon-on-insulator with dual control gates
JP2590746B2 (ja)	1994-07-29	1997-03-12	日本電気株式会社	半導体装置の製造方法
JPH08316348A (ja) *	1995-03-14	1996-11-29	Toshiba Corp	半導体装置およびその製造方法
JPH0936263A (ja)	1995-07-21	1997-02-07	Sony Corp	浮遊ゲート型不揮発性半導体記憶装置
JPH0964209A (ja) *	1995-08-25	1997-03-07	Toshiba Corp	半導体装置およびその製造方法
DE69631879D1 (de) *	1996-04-30	2004-04-22	St Microelectronics Srl	Herstellungsverfahren für einen integrierten Dickoxydtransistor
JP3598197B2 (ja)	1997-03-19	2004-12-08	株式会社ルネサステクノロジ	半導体装置
US6222769B1 (en) *	1997-06-06	2001-04-24	Kabushiki Kaisha Toshiba	Nonvolatile semiconductor storage device having buried electrode within shallow trench
JP2000156502A (ja) *	1998-09-21	2000-06-06	Texas Instr Inc <Ti>	集積回路及び方法
JP2000311956A (ja)	1999-04-27	2000-11-07	Toshiba Corp	不揮発性半導体記憶装置とその製造方法
TW484228B (en)	1999-08-31	2002-04-21	Toshiba Corp	Non-volatile semiconductor memory device and the manufacturing method thereof
US6329704B1 (en) *	1999-12-09	2001-12-11	International Business Machines Corporation	Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer
JP2002009173A (ja) *	2000-06-26	2002-01-11	Toshiba Corp	半導体装置の製造方法
US20020155665A1 (en) *	2001-04-24	2002-10-24	International Business Machines Corporation,	Formation of notched gate using a multi-layer stack
US6586289B1 (en) *	2001-06-15	2003-07-01	International Business Machines Corporation	Anti-spacer structure for improved gate activation
US6531365B2 (en) *	2001-06-22	2003-03-11	International Business Machines Corporation	Anti-spacer structure for self-aligned independent gate implantation
US6512266B1 (en) *	2001-07-11	2003-01-28	International Business Machines Corporation	Method of fabricating SiO2 spacers and annealing caps
US6509221B1 (en) *	2001-11-15	2003-01-21	International Business Machines Corporation	Method for forming high performance CMOS devices with elevated sidewall spacers
US6562713B1 (en) *	2002-02-19	2003-05-13	International Business Machines Corporation	Method of protecting semiconductor areas while exposing a gate
US6583016B1 (en) *	2002-03-26	2003-06-24	Advanced Micro Devices, Inc.	Doped spacer liner for improved transistor performance
US6991987B1 (en) *	2002-11-27	2006-01-31	Advanced Micro Devices, Inc.	Method for producing a low defect homogeneous oxynitride
JP2005235987A (ja) *	2004-02-19	2005-09-02	Toshiba Corp	半導体記憶装置及び半導体記憶装置の製造方法

2003
- 2003-06-06 JP JP2003162019A patent/JP2004363443A/ja active Pending
2004
- 2004-06-04 US US10/860,014 patent/US7238975B2/en not_active Expired - Fee Related
2007
- 2007-04-09 US US11/783,368 patent/US20070190727A1/en not_active Abandoned

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