JPH01128588A - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPH01128588A JPH01128588A JP62287883A JP28788387A JPH01128588A JP H01128588 A JPH01128588 A JP H01128588A JP 62287883 A JP62287883 A JP 62287883A JP 28788387 A JP28788387 A JP 28788387A JP H01128588 A JPH01128588 A JP H01128588A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- printed
- insulating layer
- layer
- titanium silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はテレビ、VTR,オーディオ機器等の電子通信
機器の゛シ気回路に使用することのできる混成集積回路
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a hybrid integrated circuit device that can be used in the circuitry of electronic communication equipment such as televisions, VTRs, and audio equipment.
従来の技術
従来より、混成集積回路装置の実装密度を高める手段と
して印刷抵抗を用いている。この場合、印刷抵抗は単層
又は多層の層毎に形成している。BACKGROUND OF THE INVENTION Printed resistors have traditionally been used as a means of increasing the packaging density of hybrid integrated circuit devices. In this case, the printed resistor is formed for each single layer or multiple layers.
従来例を第6図、第6図に示す。第5図は従来の混成集
積回路装置の単層の場合の例で、同図(&)は抵抗体部
分の断面図、同図(b)は同斜視図を表わし、第6薗は
従来の混成集積回路装置の多層の場合の例で抵抗体部分
の断面図を表わす。Conventional examples are shown in FIGS. Figure 5 shows an example of a conventional single-layer hybrid integrated circuit device, where (&) is a cross-sectional view of the resistor part, Figure (b) is a perspective view, and the sixth column is a conventional hybrid integrated circuit device. FIG. 4 shows a cross-sectional view of a resistor portion in an example of a multilayer hybrid integrated circuit device.
第5図および第6図において、21.22は単層の印刷
抵抗体、23は導体、24は基板、25は多層の下層印
刷抵抗体、26は絶縁層、27は多層の上層印刷抵抗体
、28はトリミング溝である。5 and 6, 21 and 22 are single-layer printed resistors, 23 is a conductor, 24 is a substrate, 25 is a multilayer lower layer printed resistor, 26 is an insulating layer, and 27 is a multilayer upper layer printed resistor. , 28 are trimming grooves.
発明が解決しようとする問題点
しかしながら上記従来例では、
(1)印刷抵抗の占有面積は各本体の面積及びトリミン
グ等のためのプツトスペースの合計だけ必要で実装密度
を高める上での障害となる。Problems to be Solved by the Invention However, in the above conventional example, (1) the area occupied by the printed resistor is the sum of the area of each main body and the put space for trimming, etc., which is an obstacle to increasing the packaging density.
(2)多層の場合に限シ、
(a))!Jミング時に絶縁層26が破壊して抵抗値に
悪影響を及ぼす。(2) Only in the case of multiple layers, (a))! The insulating layer 26 is destroyed during J-mining, which adversely affects the resistance value.
Φ)絶縁層26は数10μmと薄く、その下に導体等が
あるとトリミング時に損傷を与える恐れがある。Φ) The insulating layer 26 is as thin as several tens of micrometers, and if there is a conductor or the like underneath it, there is a risk of damage during trimming.
(C) 各層毎に抵抗トリミング工程があり工数が多
くなる。(C) There is a resistor trimming process for each layer, which increases the number of man-hours.
(d) 下層の抵抗をトリミングした後に絶縁層形成
等の熱処理があシ最終的な抵抗値の制御が難しい等の問
題点がある。(d) After trimming the resistance of the lower layer, heat treatment such as forming an insulating layer is performed, resulting in problems such as difficulty in controlling the final resistance value.
本発明は前記問題点に鑑み、実装密度を高め、印刷抵抗
を精度良く作シ、工数を削減する混成集積回路装置を提
供することを目的とするものである。SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide a hybrid integrated circuit device that can increase packaging density, accurately manufacture printed resistors, and reduce man-hours.
問題点を解決するだめの手段
上記の問題点を解決するため本発明の混成集積回路装置
は、セラミックス基板上に、珪化チタン系印刷抵抗を形
成し、前記印刷抵抗体の一部分上に無機ガラス系又は有
機系絶縁層を形成し、前記絶縁層上に前記印刷抵抗とク
ロスオーバーして、珪化チタンあるいは有機系の印刷抵
抗体を形成したものである。Means for Solving the Problems In order to solve the above problems, the hybrid integrated circuit device of the present invention includes a titanium silicide printed resistor formed on a ceramic substrate, and an inorganic glass based printed resistor formed on a portion of the printed resistor. Alternatively, an organic insulating layer is formed, and a titanium silicide or organic printed resistor is formed on the insulating layer by crossing over with the printed resistor.
作用
本発明は上記の構成によバ印刷抵抗の占有面積を減らし
、実装密度を高めることができる。また印刷抵抗のトリ
ミングは全てセラミックス基板上で行ない、且つ、最後
に一括して行なえるため、抵抗値の精度が従来例では6
%〜10%のバラツキがあるのに対し本発明では1%以
下にすることが可能である。さらに、トリミングの工数
を減らすことができるものである。Operation The present invention can reduce the area occupied by the printed resistor and increase the packaging density by using the above-described configuration. In addition, all the trimming of printed resistors is done on the ceramic substrate and can be done all at once at the end, so the precision of the resistance value is 6.
While there is a variation of % to 10%, in the present invention it is possible to reduce the variation to 1% or less. Furthermore, the number of man-hours for trimming can be reduced.
実施例
以下、本発明の一実施例の混成集積回路装置について図
面を参照しながら説明する。第1図は本発明の第1の実
施例における混成集積回路装置の印刷抵抗部分の断面図
、第2図は同じく印刷抵抗部分の斜視図を示す。Embodiment Hereinafter, a hybrid integrated circuit device according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of a printed resistor portion of a hybrid integrated circuit device according to a first embodiment of the present invention, and FIG. 2 is a perspective view of the same printed resistor portion.
第1図、第2図において、1は下層の珪化チタン系の印
刷抵抗体、2は硼珪酸ガラス等の無機ガラス系絶縁層、
3は珪化チタン系印刷抵抗1とクロスオーバーする珪化
チタン系印刷抵抗体、4はCU等の導体、5は92%〜
99%ナルミナ等のセラミックス基板、6はトリミング
溝である。In FIGS. 1 and 2, 1 is a lower layer printed resistor made of titanium silicide, 2 is an insulating layer made of inorganic glass such as borosilicate glass,
3 is a titanium silicide printed resistor that crosses over with the printed titanium silicide resistor 1, 4 is a conductor such as CU, and 5 is 92%~
A ceramic substrate made of 99% Narumina or the like, and 6 are trimming grooves.
上記の構成要素を有する混成集積回路装置の形成方法に
ついて以下に説明する。珪化チタンを主成分とする印刷
抵抗体1’i基板6上に印刷、乾燥後926℃前後の温
度でN2中で焼成する。その後、無機ガラス系の絶縁層
2を印刷抵抗体1の上に印刷、乾燥し、そして925℃
前後の温度でN2中で焼成する。その後、印刷抵抗体1
とは絶縁層2で電気的に絶縁され、印刷抵抗体1とクロ
スオーバーする珪化チタン系の印刷抵抗体3全印刷。A method for forming a hybrid integrated circuit device having the above-mentioned components will be described below. A printed resistor 1'i whose main component is titanium silicide is printed on a substrate 6, dried, and then fired in N2 at a temperature of about 926°C. After that, an inorganic glass-based insulating layer 2 is printed on the printed resistor 1, dried, and heated to 925°C.
Calcinate in N2 at around temperature. After that, printed resistor 1
is a printed resistor 3 made of titanium silicide that is electrically insulated by an insulating layer 2 and crosses over with the printed resistor 1.
乾燥したのち925℃前後の温度でN2中で焼成し形成
する。このようにして絶縁層2で電気的に絶縁された重
な9合う印刷抵抗体1,3を形成する。抵抗のトリミン
グはその後−括して行なう。After drying, it is formed by firing in N2 at a temperature of around 925°C. In this way, nine overlapping printed resistors 1 and 3 electrically insulated by the insulating layer 2 are formed. Trimming of the resistors is then done collectively.
ちなみにCU等の導体4は下層印刷抵抗体1の形成前に
形成しておく。Incidentally, the conductor 4 such as CU is formed before the lower printed resistor 1 is formed.
以上のように実施例によれば、下層抵抗体1の一部分を
絶縁層2で覆い、その絶縁層2上で上層抵抗体3を下層
抵抗体1にクロスオーバーし形成することにより、実装
密度を高め、抵抗を精度良くトリミングしトリミング工
数を減らすことができる。As described above, according to the embodiment, a part of the lower resistor 1 is covered with the insulating layer 2, and the upper resistor 3 is formed by crossing over to the lower resistor 1 on the insulating layer 2, thereby increasing the packaging density. It is possible to trim the resistor with high accuracy and reduce the number of trimming steps.
第3図は本発明の第2の実施例における混成集積回路装
置の印刷抵抗部分の断面図、第4図は同じく印刷抵抗部
分の斜視図を示す。FIG. 3 is a sectional view of a printed resistor portion of a hybrid integrated circuit device according to a second embodiment of the present invention, and FIG. 4 is a perspective view of the same printed resistor portion.
第3図、第4図において1,4〜6は第1図。In FIGS. 3 and 4, 1, 4 to 6 refer to FIG. 1.
第2図と同様て、各々、1は下層の珪化チタン系印刷抵
抗体、4はCU等の導体、5は92%〜99%アルミナ
等のセラミックス基板、6はトリミング溝を表わす。1
1はエポキシ樹脂等の有機系絶縁層、12はカーボン等
を主成分とする有機系印刷抵抗体である。Similarly to FIG. 2, 1 represents a lower layer titanium silicide printed resistor, 4 a conductor such as CU, 5 a ceramic substrate made of 92% to 99% alumina, etc., and 6 a trimming groove. 1
1 is an organic insulating layer made of epoxy resin or the like, and 12 is an organic printed resistor whose main component is carbon or the like.
珪化チタン系の印刷抵抗体1全印刷、乾燥後926℃前
後の温度で空気中にて焼成した後に、有機系絶縁層11
f、印刷抵抗体1の上に印刷する。After printing the entire titanium silicide printed resistor 1 and drying it, the organic insulating layer 11 is baked in air at a temperature of around 926°C.
f, printing on printed resistor 1;
そしてその後、50℃〜200℃程度の温度で硬化させ
、その後印刷抵抗体1と絶縁層11で電気的に絶縁され
、印刷抵抗体1とクロスオーバーする有機系印刷抵抗体
12全印刷し、150℃〜200℃程度の温度で硬化さ
せる。このようにして絶縁層11で電気的に絶縁された
量なり合う印刷抵抗体1.12を形成する。After that, it is cured at a temperature of about 50° C. to 200° C., and then the printed resistor 1 is electrically insulated by the insulating layer 11, and the organic printed resistor 12 that crosses over the printed resistor 1 is completely printed. It is cured at a temperature of about 200°C to 200°C. In this way, printed resistors 1.12 are formed which are electrically insulated by the insulating layer 11.
以上のように本実施例によれば第1の実施例と同様の効
果を奏するとともに、絶縁層を第1の実施例よりも低温
で形成することができる。As described above, according to the present example, the same effects as the first example can be achieved, and the insulating layer can be formed at a lower temperature than the first example.
発明の効果
以上のように本発明によれば、下層抵抗体の一部分を絶
縁層で覆い、その絶縁層上で上層抵抗体を下層抵抗体に
クロスオーバーして形成することにより、実装密度を高
め、抵抗を精度良クトリミングし、トリミングの工数を
減らすことができる。Effects of the Invention As described above, according to the present invention, a part of the lower layer resistor is covered with an insulating layer, and the upper layer resistor is formed by crossing over to the lower layer resistor on the insulating layer, thereby increasing the packaging density. , the resistor can be trimmed with high precision and the number of trimming steps can be reduced.
第1図は本発明の第1の実施例における混成集積回路装
置の印刷抵抗体部分の断面図、第2図は同抵抗体部分の
斜視図、第3図は本発明の第2の実施例における混成集
積回路装置の印刷抵抗体部分の断面図、第4図は同抵抗
体部分の斜視図、第6図(&)は従来例における単層混
成集積回路装置の抵抗体部分の断面図、同図(b)は同
抵抗体部分の斜視図、第6図は従来例における多層混成
集積回路装置の印刷抵抗体部分の断面図である。
1・・・・・・下層印刷抵抗体(珪化チタン系)、2・
・・・・・絶縁層(無機ガラス系)、3・・・・・・上
層印刷抵抗体(珪化チタン系)、4・・・・・・CU等
の導体、6・・・・・・セラミックス基板、6・・・・
・・抵抗トリミング溝、11・・・・・・絶縁層(有機
系)、12・・・・・・上層印刷抵抗体(有機系)。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名f−
−−下層目IJ+1才人抗俸(珪化チタン系)2−−一
絶球/IJ(黒1玖ガラス斤、)第 12 6
− トリミング之鼻第 2 [F]
11−一儂色謳シ眉(有機系つ
/、Z−一一上漫印J’IP−抗体(肩機爬第3図
第4図FIG. 1 is a sectional view of a printed resistor portion of a hybrid integrated circuit device according to a first embodiment of the present invention, FIG. 2 is a perspective view of the same resistor portion, and FIG. 3 is a second embodiment of the present invention. 4 is a perspective view of the resistor portion, and FIG. 6 (&) is a sectional view of the resistor portion of the conventional single-layer hybrid integrated circuit device. FIG. 6B is a perspective view of the resistor portion, and FIG. 6 is a sectional view of the printed resistor portion of a conventional multilayer hybrid integrated circuit device. 1... lower layer printed resistor (titanium silicide system), 2.
... Insulating layer (inorganic glass type), 3 ... Upper layer printed resistor (titanium silicide system), 4 ... Conductor such as CU, 6 ... Ceramics Board, 6...
...Resistance trimming groove, 11... Insulating layer (organic type), 12... Upper layer printed resistor (organic type). Name of agent: Patent attorney Toshio Nakao and one other person f-
--Lower grade IJ + 1-year-old anti-salary (titanium silicide) 2--Issei ball/IJ (black 1 quart glass loaf) No. 12 6
- Trimming nose No. 2 [F] 11-One color expression eyebrow (organic type), Z-11 upper man seal J'IP-Antibody (shoulder machine, Figure 3, Figure 4)
Claims (1)
する抵抗体と、前記抵抗体の一部分上に形成した無機ガ
ラスと有機系絶縁物の少なくとも一方からなる絶縁層と
、前記抵抗体上に前記絶縁層を介して形成した珪化チタ
ンを主成分とする抵抗体又は有機系抵抗体とを備えるこ
とを特徴とする混成集積回路装置。a resistor mainly composed of titanium silicide formed on a ceramic substrate; an insulating layer made of at least one of inorganic glass and organic insulator formed on a portion of the resistor; and the insulating layer on the resistor. 1. A hybrid integrated circuit device comprising: a resistor whose main component is titanium silicide or an organic resistor which is formed through the use of titanium silicide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287883A JPH01128588A (en) | 1987-11-13 | 1987-11-13 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62287883A JPH01128588A (en) | 1987-11-13 | 1987-11-13 | Hybrid integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01128588A true JPH01128588A (en) | 1989-05-22 |
Family
ID=17722960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62287883A Pending JPH01128588A (en) | 1987-11-13 | 1987-11-13 | Hybrid integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01128588A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH034584A (en) * | 1989-06-01 | 1991-01-10 | Matsushita Electric Ind Co Ltd | Hybrid integrated circuit device |
| JPH034585A (en) * | 1989-06-01 | 1991-01-10 | Matsushita Electric Ind Co Ltd | Hybrid integrated circuit device |
-
1987
- 1987-11-13 JP JP62287883A patent/JPH01128588A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH034584A (en) * | 1989-06-01 | 1991-01-10 | Matsushita Electric Ind Co Ltd | Hybrid integrated circuit device |
| JPH034585A (en) * | 1989-06-01 | 1991-01-10 | Matsushita Electric Ind Co Ltd | Hybrid integrated circuit device |
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