JPH01164757U - - Google Patents
Info
- Publication number
- JPH01164757U JPH01164757U JP5993188U JP5993188U JPH01164757U JP H01164757 U JPH01164757 U JP H01164757U JP 5993188 U JP5993188 U JP 5993188U JP 5993188 U JP5993188 U JP 5993188U JP H01164757 U JPH01164757 U JP H01164757U
- Authority
- JP
- Japan
- Prior art keywords
- metal
- sputtering device
- electrodes
- deposited
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案の一実施例のスパツタリング装
置の断面図、第２図は第１図に示した装置を用い
てシリコン基板上にガリウムを堆積した場合の基
板厚さ方向のガリウム濃度分布図である。
１……真空容器、２１……下部電極、２２……
上部電極、３……真空排気系、４……不活性ガス
ボンベ、６……下部電極凹部、７……基板。
Fig. 1 is a cross-sectional view of a sputtering apparatus according to an embodiment of the present invention, and Fig. 2 is a gallium concentration distribution diagram in the substrate thickness direction when gallium is deposited on a silicon substrate using the apparatus shown in Fig. 1. It is. 1... Vacuum container, 21... Lower electrode, 22...
Upper electrode, 3... Vacuum exhaust system, 4... Inert gas cylinder, 6... Lower electrode recess, 7... Substrate.
Claims (1)
グすべき金属を充填可能の凹部を上面に有する下
部電極と下面に金属を被着すべき素体を支持可能
の上部電極が対向配置され、両電極がスイツチを
介して電極間にグロー放電を発生させるための電
源に接続されたことを特徴とするスパツタリング
装置。 A lower electrode having a recess on the upper surface into which metal to be sputtered can be filled into a vacuum container having a gas inlet, and an upper electrode capable of supporting an element body to which metal is to be deposited on the lower surface are arranged facing each other, and both electrodes are connected to each other by a switch. A sputtering device characterized in that it is connected to a power source for generating a glow discharge between electrodes via a sputtering device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988059931U JPH0745562Y2 (en) | 1988-05-06 | 1988-05-06 | Sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988059931U JPH0745562Y2 (en) | 1988-05-06 | 1988-05-06 | Sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01164757U true JPH01164757U (en) | 1989-11-17 |
| JPH0745562Y2 JPH0745562Y2 (en) | 1995-10-18 |
Family
ID=31285665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988059931U Expired - Lifetime JPH0745562Y2 (en) | 1988-05-06 | 1988-05-06 | Sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0745562Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008260974A (en) * | 2007-04-10 | 2008-10-30 | Showa Denko Kk | Method for producing Ga sputter target |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323881A (en) * | 1976-08-18 | 1978-03-04 | Ulvac Corp | High speed sputtering apparatus |
| JPS54143780A (en) * | 1978-05-01 | 1979-11-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor sputtering target |
| JPS61257472A (en) * | 1985-05-07 | 1986-11-14 | Mitsubishi Electric Corp | Sputtering device |
| JPS6357763A (en) * | 1986-08-27 | 1988-03-12 | Mitsui Eng & Shipbuild Co Ltd | Target and its production |
-
1988
- 1988-05-06 JP JP1988059931U patent/JPH0745562Y2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323881A (en) * | 1976-08-18 | 1978-03-04 | Ulvac Corp | High speed sputtering apparatus |
| JPS54143780A (en) * | 1978-05-01 | 1979-11-09 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor sputtering target |
| JPS61257472A (en) * | 1985-05-07 | 1986-11-14 | Mitsubishi Electric Corp | Sputtering device |
| JPS6357763A (en) * | 1986-08-27 | 1988-03-12 | Mitsui Eng & Shipbuild Co Ltd | Target and its production |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008260974A (en) * | 2007-04-10 | 2008-10-30 | Showa Denko Kk | Method for producing Ga sputter target |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0745562Y2 (en) | 1995-10-18 |