JPH01177276U - - Google Patents

Info

Publication number
JPH01177276U
JPH01177276U JP7472288U JP7472288U JPH01177276U JP H01177276 U JPH01177276 U JP H01177276U JP 7472288 U JP7472288 U JP 7472288U JP 7472288 U JP7472288 U JP 7472288U JP H01177276 U JPH01177276 U JP H01177276U
Authority
JP
Japan
Prior art keywords
substrate
growth
dummy
substrate holder
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7472288U
Other languages
English (en)
Other versions
JPH0527500Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7472288U priority Critical patent/JPH0527500Y2/ja
Publication of JPH01177276U publication Critical patent/JPH01177276U/ja
Application granted granted Critical
Publication of JPH0527500Y2 publication Critical patent/JPH0527500Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】
第１図は本考案の１具体例である基板ホルダー
の概念図であり、同図ａは正面図、ｂはａの―
断面図、ｃはａの―断面図である。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 垂直に装着した成長用基板を原料融液に浸
    漬して、液相エピタキシヤル成長させるときに用
    いる基板ホルダーにおいて、基板ホルダー内に成
    長用基板を収納可能とし、成長用基板を原料融液
    と接触させるための窓を設け、成長用基板の前面
    にダミー基板を昇降可能に保持することにより、
    該窓を開閉するようにしたことを特徴とする液相
    エピタキシヤル成長用基板ホルダー。 (2) ＣｄＴｅ系成長用基板の上にＨｇＴｅ系エ
    ピタキシヤル成長層を液相成長させるときに用い
    る基板ホルダーにおいて、該成長用基板と同一組
    成のダミー基板を、僅かの間隙を残して成長用基
    板に対向させ、縦溝を基板ホルダーに設けて、縦
    溝内をダミー基板の浮力と重力で昇降可能とした
    ことを特徴とする請求項(1)記載の基板ホルダー
    。
JP7472288U 1988-06-07 1988-06-07 Expired - Lifetime JPH0527500Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7472288U JPH0527500Y2 (ja) 1988-06-07 1988-06-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7472288U JPH0527500Y2 (ja) 1988-06-07 1988-06-07

Publications (2)

Publication Number Publication Date
JPH01177276U true JPH01177276U (ja) 1989-12-18
JPH0527500Y2 JPH0527500Y2 (ja) 1993-07-13

Family

ID=31299822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7472288U Expired - Lifetime JPH0527500Y2 (ja) 1988-06-07 1988-06-07

Country Status (1)

Country Link
JP (1) JPH0527500Y2 (ja)

Also Published As

Publication number Publication date
JPH0527500Y2 (ja) 1993-07-13

Similar Documents

Publication Publication Date Title
JPS5423517A (en) Floating head slider
EP0276961A3 (en) Solar battery and process for preparing same
AU561637B2 (en) Coating
DE2966902D1 (en) Unit for culture sampling by contact
JPH0189965U (ja)
JPS5747576A (en) Crucible supporting device
JPS5777095A (en) Liquid phase epitaxial growing apparatus
JPS538375A (en) Method and apparatus for pulling up single crystal
AU8670782A (en) Semicrystalline silicon sheets
JPS6476995A (en) Apparatus for growing liquid phase
JPS61142451U (ja)
JPS5337184A (en) Epitaxially growing method in liquid phase
JPS5991729U (ja) 液相エピタキシヤル成長装置
JPS57183043A (en) Mounting of semiconductor pellet
JPS59104121A (ja) ３−５族化合物半導体液相エピタキシヤル成長方法およびこれに用いられる半導体基板支持装置
JPS53144690A (en) Production of semiconductor device
Csokan Effect of Structure on the Anodic Oxidation of Aluminum--Epitaxy in Oxide Films
JPS55160426A (en) Manufacture of semiconductor device
JPS5783027A (en) Liquid phase epitaxially growing device
JPH03112931U (ja)
JPS5335699A (en) Growing method for heteroepitaxial membrane
JPH0289825U (ja)
JPS6428814A (en) Liquid epitaxial growth device
JPS632776U (ja)
JPS57197823A (en) Liquid phase epitaxial growing method