JPH0133380B2 - - Google Patents

Info

Publication number
JPH0133380B2
JPH0133380B2 JP58166647A JP16664783A JPH0133380B2 JP H0133380 B2 JPH0133380 B2 JP H0133380B2 JP 58166647 A JP58166647 A JP 58166647A JP 16664783 A JP16664783 A JP 16664783A JP H0133380 B2 JPH0133380 B2 JP H0133380B2
Authority
JP
Japan
Prior art keywords
door
opening
closing
doors
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58166647A
Other languages
English (en)
Other versions
JPS6060060A (ja
Inventor
Koichi Kai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58166647A priority Critical patent/JPS6060060A/ja
Priority to US06/675,863 priority patent/US4565601A/en
Publication of JPS6060060A publication Critical patent/JPS6060060A/ja
Publication of JPH0133380B2 publication Critical patent/JPH0133380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Analytical Chemistry (AREA)
  • Power-Operated Mechanisms For Wings (AREA)
  • Lock And Its Accessories (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、鉄道車両の扉開閉装置に係り、特に
乗降客の多い通勤車両等において好適な鉄道車両
の扉開閉装置に関するものである。
〔発明の背景〕
従来の鉄道車両に設けられた扉開閉装置は、運
転室等に設けられた開閉スイツチでいつせいに開
閉を行なう構成となつている。したがつて、扉を
閉める際に乗客等が該扉に挾まれた場合、それを
乗務員が発見して前記開閉スイツチを操作して列
車の全扉を一旦開き、再度閉める操作を行なつて
いた。すなわち、前述のように扉に乗客等が挾ま
れた場合には、その挾まれた物とは無関係な扉ま
で再度開閉する動作を行なつており、不要な扉開
閉による動力消費および事故の発生等の欠点があ
るとともに、乗務員は列車前後の運転室で前記扉
開閉操作を行なうため、該乗務員は前記扉に挾ま
れた乗客あるいは他の物が徐去されたか否かを十
分確認しないまま操作しているのが現状であり、
乗客の安全性確保の点から問題があるという欠点
があつた。
〔発明の目的〕
上記の点に鑑み本発明は、扉に乗客あるいは物
が挾まつた場合に、その扉のみを開閉できるよう
にすることにより、動力消費の低減および乗客の
安全を確保することを目的としたものである。
〔発明の概要〕
本発明は、列車の各扉に該扉を開けるための機
構を設け、乗客あるいは他の物が挾まつた場合
に、その扉のみを再度開閉して挾まつた乗客ある
いは物を除去できるようにしたことを特徴とする
ものである。
〔発明の実施例〕
以下、本発明の一実施例を第１図ないし第３図
により説明する。第１図は本発明による扉開閉接
置の一実施例を示す回路図、第２図は第１図の扉
開閉装置を備えた扉の正面図、第３図は第２図Ａ
部の拡大斜視図である。同図において１は乗務員
が扱う扉開閉用の指令スイツチ、２は該指令スイ
ツチ１の信号を列車中の各種に伝える引通し線で
ある。３はリミツトスイツチ、４はリミツトスイ
ツチ３によつて作用するリレーで４ａおよび４ｂ
はその各接点、５は電磁弁で前記リレー４の接点
４ａ，４ｂの開閉により空気だめ６の圧縮空気を
空気管７または８を介して戸閉器９のピストン１
０の左側または右側に供給する。１１はピストン
棒で、その左端は連結腕１２によつてラツク軸１
３と連結されるとともに扉１７にも連結されてい
る。前記ラツク軸１３とかみ合つてピニオン１４
があり、更にこの下方にラツク軸１５がピニオン
１４とかみ合つて設けられている。該ラツク軸１
５の右端は連結腕１６により扉１８に連結されて
いる。次に第２図に示すように、前記扉１７，１
８はレール１９ａおよび１９ｂに各々滑動可能に
懸架されている。更に、各扉１７および１８には
把手２０，２１が点線で示す把手２０ａ，２１ａ
の如く回動可能に設けられ、これに連結されたリ
ンク２２，２３の上下運動をさせる。そして、こ
の上下運動は第３図に示す如く、連動棒２７，２
８を介して連動板２５に伝えられる。該連運板２
５は、中央部でヒンジ２６によつて車体（図示省
略）に支持されその上方にはリミツトスイツチ箱
２４が設けられており、上下に揺動可能であるた
めに、連動棒２７，２８の上下運動はリミツトス
イツチ箱２４の作用軸２９に伝わる。ところで、
該連動板２５は常時においては支持板３０により
水平に支持されている。
このような構成において、列車が停車して乗務
員が第１図の指令スイツチを閉路すると、引通線
２に電流が流れる。この時、乗客が把手２０また
は２１を把手２０ａまたは２０ａの如く回転させ
る。例えば把手２０を回転させると、第３図に示
したリンク２２は引下げられ、その上端に連結さ
れた連結棒２７の上端は押上げられる。そして、
連動板２５を介してリミツトスイツチ箱２４の作
用軸２９を押込むので第１図のリミツトスイツチ
３は閉じる。したがつて、リレー４は励磁され、
接点４ａによりその状態を自己保持するととも
に、接点４ｂにより電磁弁５を励磁するので、空
気だめ６の圧縮空気は第１図とは逆に空気管８に
供給される。そしてピストン１０を方向に移動さ
せ扉１７を左に動かすとともに、ラツク軸１３に
よりピニオン１４を駆動してラツク軸１５を右方
向に送り、その右端に連結された扉１８は右方向
に移動し、左右の扉１７，１８は開いた状態とな
る。
次に、扉１７，１８が開いた状態で指令スイツ
チ１を閉路すると、リミツトスイツチ３の開閉に
関係なくリレー４は消磁し接点４ａ，４ｂは開路
する。したがつて、電磁弁５が切終わつて戸閉器
９へ供給されていた圧縮空気が排出される。これ
に伴い扉１７，１８はそれぞれに取付けられてい
るばね装置（図示省略）によつて閉じる。この扉
１７，１８の閉動作中において、該扉１７，１８
間に乗客の腕や足を挾まれた場合、乗務員がま
ず、指令スイツチ１を閉路し、かつ、乗客等が前
記把手２０あるいは２１を回動して連動棒２７あ
るいは２８を介し連動板２５を揺動させ、リミツ
トスイツチ３を閉路すれば、該扉１７、あるいは
１８のみが開く。したがつて、乗客は脱出でき
る。
このような構成によれば、扉１７，１８に乗客
あるいは他の物が挾まれた場合、該扉１７，１８
のみ再度開閉動作を行なうため、消費動力すなわ
ち本実施例においては圧縮空気の消費を低減でき
る。また、乗客あるいは物が挾まれた扉１７，１
８の位置でその開閉を操作するため、確認作業も
確実に行なえる。
〔発明の効果〕
以上説明したように本発明によれば、扉に乗客
あるいは他の物が挾まれた場合、その扉のみを開
閉できるため、無駄な動力消費を防止できるとと
もに、乗客の安全も確保できる。
【図面の簡単な説明】
第１図は本発明による扉開閉装置の一実施例を
示す回路図、第２図は第１図の扉開閉装置を備え
た扉の正面図、第３図は第２図Ａ部の拡大斜視図
である。 １……指令スイツチ、３……リミツトスイツ
チ、４……リレー、５……電磁弁、６……空気だ
め、９……戸閉器、１２，１６……連結腕、１
７，１８……扉、２０，２１……把手、２５……
連動板、２７，２８……連動棒。

Claims (1)

    【特許請求の範囲】
  1. １ 車体出入口に開閉可能に設けられた扉と、該
    扉に連結されすくなくとも閉動作のみを行なう戸
    閉器と、閉指令によつて前記戸閉器を動作させる
    制御器とから成る鉄道車両の扉開閉装置におい
    て、前記扉に対応して設けられ、かつ、該扉の開
    指令を出力する開指令手段と、該開指令手段から
    の出力によつて前記制御器より扉閉器へ開動指令
    を出力させる制御手段とから成ることを特徴とす
    る鉄道車両の扉開閉装置。
JP58166647A 1983-09-12 1983-09-12 鉄道車両の扉開閉装置 Granted JPS6060060A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58166647A JPS6060060A (ja) 1983-09-12 1983-09-12 鉄道車両の扉開閉装置
US06/675,863 US4565601A (en) 1983-09-12 1984-11-28 Method and apparatus for controlling sample temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58166647A JPS6060060A (ja) 1983-09-12 1983-09-12 鉄道車両の扉開閉装置

Publications (2)

Publication Number Publication Date
JPS6060060A JPS6060060A (ja) 1985-04-06
JPH0133380B2 true JPH0133380B2 (ja) 1989-07-13

Family

ID=15835144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58166647A Granted JPS6060060A (ja) 1983-09-12 1983-09-12 鉄道車両の扉開閉装置

Country Status (2)

Country Link
US (1) US4565601A (ja)
JP (1) JPS6060060A (ja)

Families Citing this family (279)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239624A (ja) * 1985-04-16 1986-10-24 Toshiba Mach Co Ltd ロ−デイング装置およびロ−デイング方法
JPS6218028A (ja) * 1985-07-16 1987-01-27 Toshiba Corp デイスカム装置
US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
JPH0773104B2 (ja) * 1986-02-14 1995-08-02 富士通株式会社 レジスト剥離方法
US4724621A (en) * 1986-04-17 1988-02-16 Varian Associates, Inc. Wafer processing chuck using slanted clamping pins
JPH0698292B2 (ja) * 1986-07-03 1994-12-07 忠弘 大見 超高純度ガスの供給方法及び供給系
EP0258698B1 (en) * 1986-09-05 1997-11-12 Hitachi, Ltd. Dry etching method
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5040484A (en) * 1987-05-04 1991-08-20 Varian Associates, Inc. Apparatus for retaining wafers
US4817556A (en) * 1987-05-04 1989-04-04 Varian Associates, Inc. Apparatus for retaining wafers
US4956043A (en) * 1987-05-25 1990-09-11 Hitachi, Ltd. Dry etching apparatus
JPS6411966A (en) * 1987-07-02 1989-01-17 Fujitsu Ltd High-temperature sputtering method
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
US4913790A (en) * 1988-03-25 1990-04-03 Tokyo Electron Limited Treating method
US4999320A (en) * 1988-03-31 1991-03-12 Texas Instruments Incorporated Method for suppressing ionization avalanches in a helium wafer cooling assembly
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
EP0393637B1 (en) * 1989-04-18 1994-02-16 Tokyo Electron Limited Plasma processing method
FR2646861B1 (fr) * 1989-05-09 1991-07-26 Philips Nv Appareil de traitement de substrats plans sous vide partiel
DE3943482C2 (de) * 1989-05-08 1994-07-07 Balzers Hochvakuum Werkstückträger für ein scheibenförmiges Werkstück, sowie Vakuumprozeßkammer
WO1990013687A2 (en) * 1989-05-08 1990-11-15 N.V. Philips' Gloeilampenfabrieken Apparatus and method for treating flat substrates under reduced pressure
US5248370A (en) * 1989-05-08 1993-09-28 Applied Materials, Inc. Apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment
JPH0327522A (ja) * 1989-06-26 1991-02-05 Hitachi Ltd 半導体基板への薄膜加工方法及びその装置並びに薄膜加工装置
US5002631A (en) * 1990-03-09 1991-03-26 At&T Bell Laboratories Plasma etching apparatus and method
US4971653A (en) * 1990-03-14 1990-11-20 Matrix Integrated Systems Temperature controlled chuck for elevated temperature etch processing
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
US5180478A (en) * 1990-12-19 1993-01-19 Intevac, Inc. Sputter coating source
DE4041029C1 (en) * 1990-12-20 1992-02-06 Siemens Nixdorf Informationssysteme Ag, 4790 Paderborn, De Component cooler for vacuum chamber - has stamper-like heat sink inserted in sealed opening and directly contacting base of component
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5131460A (en) * 1991-10-24 1992-07-21 Applied Materials, Inc. Reducing particulates during semiconductor fabrication
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5698070A (en) * 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
JPH06158361A (ja) * 1992-11-20 1994-06-07 Hitachi Ltd プラズマ処理装置
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5624582A (en) * 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5342476A (en) * 1993-01-21 1994-08-30 Vlsi Technology, Inc. Reduction of polycide residues through helium backside pressure control during dry etching
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
TW277139B (ja) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US6544379B2 (en) 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
US6278600B1 (en) 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
US5885469B1 (en) * 1996-11-05 2000-08-08 Applied Materials Inc Topographical structure of an electrostatic chuck and method of fabricating same
JPH08507196A (ja) * 1994-01-31 1996-07-30 アプライド マテリアルズ インコーポレイテッド 共形な絶縁体フィルムを有する静電チャック
US5491603A (en) * 1994-04-28 1996-02-13 Applied Materials, Inc. Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer
US5521790A (en) * 1994-05-12 1996-05-28 International Business Machines Corporation Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization
JPH07321176A (ja) * 1994-05-20 1995-12-08 Hitachi Ltd 基板搬送方法
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5691876A (en) * 1995-01-31 1997-11-25 Applied Materials, Inc. High temperature polyimide electrostatic chuck
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
TW286414B (en) * 1995-07-10 1996-09-21 Watkins Johnson Co Electrostatic chuck assembly
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
WO1997009737A1 (en) 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5609720A (en) * 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5948283A (en) * 1996-06-28 1999-09-07 Lam Research Corporation Method and apparatus for enhancing outcome uniformity of direct-plasma processes
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
US6019848A (en) * 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US5879574A (en) * 1996-11-13 1999-03-09 Applied Materials, Inc. Systems and methods for detecting end of chamber clean in a thermal (non-plasma) process
US5968587A (en) * 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US5873781A (en) 1996-11-14 1999-02-23 Bally Gaming International, Inc. Gaming machine having truly random results
US5885428A (en) * 1996-12-04 1999-03-23 Applied Materials, Inc. Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system
US5748435A (en) * 1996-12-30 1998-05-05 Applied Materials, Inc. Apparatus for controlling backside gas pressure beneath a semiconductor wafer
US6189482B1 (en) 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6110556A (en) * 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6293749B1 (en) 1997-11-21 2001-09-25 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6572814B2 (en) * 1998-09-08 2003-06-03 Applied Materials Inc. Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas
US6639783B1 (en) * 1998-09-08 2003-10-28 Applied Materials, Inc. Multi-layer ceramic electrostatic chuck with integrated channel
DE19853605A1 (de) * 1998-11-20 2000-05-25 Philips Corp Intellectual Pty Verfahren und Anordnung zur Herstellung einer Leuchtschicht
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6635580B1 (en) * 1999-04-01 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd. Apparatus and method for controlling wafer temperature in a plasma etcher
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US20010035403A1 (en) 2000-05-18 2001-11-01 Albert Wang Method and structure for producing flat wafer chucks
US6628503B2 (en) 2001-03-13 2003-09-30 Nikon Corporation Gas cooled electrostatic pin chuck for vacuum applications
EP1254606A1 (en) * 2001-05-04 2002-11-06 Philip Morris Products S.A. Apparatus and method for delaminating parcels of tobacco
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
CN1249777C (zh) * 2001-08-27 2006-04-05 松下电器产业株式会社 等离子体处理装置及等离子体处理方法
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
US20040045813A1 (en) * 2002-09-03 2004-03-11 Seiichiro Kanno Wafer processing apparatus, wafer stage, and wafer processing method
WO2004082007A1 (ja) * 2003-03-12 2004-09-23 Tokyo Electron Limited 半導体処理用の基板保持構造及びプラズマ処理装置
US7033443B2 (en) * 2003-03-28 2006-04-25 Axcelis Technologies, Inc. Gas-cooled clamp for RTP
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US6956308B2 (en) * 2003-07-15 2005-10-18 Nikon Corporation Dual flow circulation system for a mover
US7355308B2 (en) * 2003-08-21 2008-04-08 Nikon Corporation Mover combination with two circulation flows
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
JP4636807B2 (ja) * 2004-03-18 2011-02-23 キヤノン株式会社 基板保持装置およびそれを用いた露光装置
US20050229854A1 (en) * 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
US7133120B2 (en) * 2004-05-04 2006-11-07 Asml Netherlands B.V. Lithographic apparatus, article support member, and method
US20080073563A1 (en) * 2006-07-01 2008-03-27 Nikon Corporation Exposure apparatus that includes a phase change circulation system for movers
US7972444B2 (en) * 2007-11-07 2011-07-05 Mattson Technology, Inc. Workpiece support with fluid zones for temperature control
US8092606B2 (en) * 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
WO2011043063A1 (ja) * 2009-10-05 2011-04-14 キヤノンアネルバ株式会社 基板冷却装置、スパッタリング装置および電子デバイスの製造方法
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US10537013B2 (en) * 2012-04-23 2020-01-14 Applied Materials, Inc. Distributed electro-static chuck cooling
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
GB201402126D0 (en) * 2014-02-07 2014-03-26 Spts Technologies Ltd Method of processing a substrate
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US11227746B2 (en) * 2018-03-23 2022-01-18 Applied Materials, Inc. Isolated backside helium delivery system
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11145532B2 (en) * 2018-12-21 2021-10-12 Toto Ltd. Electrostatic chuck
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4313783A (en) * 1980-05-19 1982-02-02 Branson International Plasma Corporation Computer controlled system for processing semiconductor wafers
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPS57149734A (en) * 1981-03-12 1982-09-16 Anelva Corp Plasma applying working device

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