JPH0193166A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0193166A
JPH0193166A JP62249113A JP24911387A JPH0193166A JP H0193166 A JPH0193166 A JP H0193166A JP 62249113 A JP62249113 A JP 62249113A JP 24911387 A JP24911387 A JP 24911387A JP H0193166 A JPH0193166 A JP H0193166A
Authority
JP
Japan
Prior art keywords
layer
gaas
quantum well
doped
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62249113A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376787B2 (th
Inventor
Kenichi Imamura
健一 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62249113A priority Critical patent/JPH0193166A/ja
Publication of JPH0193166A publication Critical patent/JPH0193166A/ja
Publication of JPH0376787B2 publication Critical patent/JPH0376787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP62249113A 1987-10-03 1987-10-03 半導体装置 Granted JPH0193166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62249113A JPH0193166A (ja) 1987-10-03 1987-10-03 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62249113A JPH0193166A (ja) 1987-10-03 1987-10-03 半導体装置

Publications (2)

Publication Number Publication Date
JPH0193166A true JPH0193166A (ja) 1989-04-12
JPH0376787B2 JPH0376787B2 (th) 1991-12-06

Family

ID=17188146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62249113A Granted JPH0193166A (ja) 1987-10-03 1987-10-03 半導体装置

Country Status (1)

Country Link
JP (1) JPH0193166A (th)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278427A (en) * 1993-02-04 1994-01-11 The United States Of America As Represented By The Secretary Of The Army Quantum collector hot-electron transistor
US5389798A (en) * 1991-10-02 1995-02-14 Mitsubishi Denki Kabushiki Kaisha High-speed semiconductor device with graded collector barrier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389798A (en) * 1991-10-02 1995-02-14 Mitsubishi Denki Kabushiki Kaisha High-speed semiconductor device with graded collector barrier
US5278427A (en) * 1993-02-04 1994-01-11 The United States Of America As Represented By The Secretary Of The Army Quantum collector hot-electron transistor

Also Published As

Publication number Publication date
JPH0376787B2 (th) 1991-12-06

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term