JPH0227813B2 - - Google Patents

Info

Publication number
JPH0227813B2
JPH0227813B2 JP56215543A JP21554381A JPH0227813B2 JP H0227813 B2 JPH0227813 B2 JP H0227813B2 JP 56215543 A JP56215543 A JP 56215543A JP 21554381 A JP21554381 A JP 21554381A JP H0227813 B2 JPH0227813 B2 JP H0227813B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
layer
silicon nitride
silicon
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56215543A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58110076A (ja
Inventor
Yoshikimi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP56215543A priority Critical patent/JPS58110076A/ja
Publication of JPS58110076A publication Critical patent/JPS58110076A/ja
Publication of JPH0227813B2 publication Critical patent/JPH0227813B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
JP56215543A 1981-12-23 1981-12-23 半導体装置の製造方法 Granted JPS58110076A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56215543A JPS58110076A (ja) 1981-12-23 1981-12-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56215543A JPS58110076A (ja) 1981-12-23 1981-12-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58110076A JPS58110076A (ja) 1983-06-30
JPH0227813B2 true JPH0227813B2 (de) 1990-06-20

Family

ID=16674164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56215543A Granted JPS58110076A (ja) 1981-12-23 1981-12-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58110076A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6170024A (ja) * 1984-09-10 1986-04-10 Nippon Ester Co Ltd 延伸撚糸機におけるコツプ形成方法

Also Published As

Publication number Publication date
JPS58110076A (ja) 1983-06-30

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