JPH02296312A - Electronic component and manufacture thereof - Google Patents
Electronic component and manufacture thereofInfo
- Publication number
- JPH02296312A JPH02296312A JP1118338A JP11833889A JPH02296312A JP H02296312 A JPH02296312 A JP H02296312A JP 1118338 A JP1118338 A JP 1118338A JP 11833889 A JP11833889 A JP 11833889A JP H02296312 A JPH02296312 A JP H02296312A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- substrate
- softening temperature
- insulating
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Details Of Resistors (AREA)
- Thermistors And Varistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
駁裟上■l会■
本発明は、電子部品およびその製造方法に関し、主に半
導体装置などを含む電子回路のプリント基板上に表面実
装(SMT : 5urfase MountjngT
echnology)される電子部品に関する。[Detailed Description of the Invention] The present invention relates to electronic components and methods for manufacturing the same, and mainly relates to surface mounting (SMT) on printed circuit boards of electronic circuits including semiconductor devices.
technology).
兜米Ω肢迷
コンデンサ、バリスタ、容量バリスタなどの電子部品は
、−収約に絶縁性の良好な磁器基板の両面に銀等の対向
電極が形成され、これら対向電極の上側に絶縁層が形成
された構造である。このような電子部品の具体的な構造
は第4図ないし第6図に示すように、磁器基板11の一
面Aおよび他面Bにそれぞれ対向電極12が形成され、
これら対向電極12外面にはこれら対向電極12と外部
電極との接続を行なうための端部電極14がそれぞれ形
成され、これら端部電極14外面にはNiメツキ層15
とSnメツキ(はんだメツキともいう)、層16が積層
形成されている。そして磁器基板11の両面であって対
向電極12の上側からは、上下の対向電極12.12問
および左右の端部電極14.14間を絶縁するための絶
縁層17が形成されている。Electronic components such as capacitors, varistors, and capacitive varistors are manufactured by forming counter electrodes such as silver on both sides of a ceramic substrate with good insulation, and an insulating layer on the top of these counter electrodes. The structure is The specific structure of such an electronic component is as shown in FIGS. 4 to 6, in which opposing electrodes 12 are formed on one side A and the other side B of a ceramic substrate 11, respectively.
End electrodes 14 are formed on the outer surfaces of these counter electrodes 12 to connect these counter electrodes 12 with external electrodes, and Ni plating layers 15 are formed on the outer surfaces of these end electrodes 14.
, Sn plating (also referred to as solder plating), and layer 16 are laminated. An insulating layer 17 is formed on both sides of the ceramic substrate 11 from above the counter electrode 12 to insulate the upper and lower counter electrodes 12 and 12 and the left and right end electrodes 14 and 14.
このような電子部品の製造方法は、磁器基板11に対向
電極Y2を印刷・焼成する工程までは単板状のコンデン
サと同じである。また、絶縁層17を形成する工程は、
ガラス粉末などの絶縁材料をペースト状にし、このペー
スト状の絶縁材料を磁器基板1.1の一面にスクリーン
印刷などにより塗布して乾燥させた後、さらに他面にも
同様に絶縁材料を塗布・乾燥させてお(。この後磁器基
板11をセッター上に配置し、このセッターを焼成炉内
にセットする。絶縁材料の軟化温度付近の温度(400
〜900℃)にまで昇温させ、絶縁材料を加熱・溶融さ
せてから冷却し、再硬化させて磁器基板11両面に絶縁
層17.17を同時に形成する。この後、銀などからな
る端部電極14を形成し、さらにこれら端部電極14部
分にメツキを施ずために電子部品の全体をメツキ液の中
に浸漬していた。The method for manufacturing such an electronic component is the same as that for a single-plate capacitor up to the step of printing and firing the counter electrode Y2 on the ceramic substrate 11. Further, the step of forming the insulating layer 17 is as follows:
An insulating material such as glass powder is made into a paste, and this paste-like insulating material is applied to one side of the ceramic substrate 1.1 by screen printing or the like, and after drying, the insulating material is applied to the other side in the same way. After drying (. After this, place the porcelain substrate 11 on a setter, and set this setter in a firing furnace.
~900° C.) to heat and melt the insulating material, cool it, and re-harden it to form insulating layers 17 and 17 on both surfaces of the ceramic substrate 11 at the same time. Thereafter, end electrodes 14 made of silver or the like are formed, and the entire electronic component is immersed in a plating solution so that the end electrodes 14 are not plated.
前記2層のメツキ15.16は、端部電極14に外部電
極を接続する際に、銀電極が溶は出すいわゆる銀くわれ
などの不良が発生しないようにするためのものであるが
、前記絶縁層17にピンホルや極端に薄い部分などの欠
陥が生じていると、これら欠陥部分からメツキ液が磁器
基板11内の粒界層に浸透して粒界絶縁層の浸蝕、絶縁
抵抗の低下等を引き起こし、製品寿命を短くするなど電
子部品の信頼性を低下させる原因となっていた。したが
って、電子部品の信頼性を維持するためには、メツキ液
が絶縁層17の欠陥部分から1ifl器基板11内に浸
透するのを田土することが重要である。そのために、従
来は絶縁層17を厚くしたり、基板端面13a、13b
に絶縁層を形成したりしていた。The two layers of plating 15 and 16 are for preventing defects such as so-called silver holes caused by melting of the silver electrode when connecting an external electrode to the end electrode 14. If defects such as pin holes or extremely thin portions occur in the insulating layer 17, the plating solution penetrates into the grain boundary layer in the ceramic substrate 11 from these defective portions, causing erosion of the grain boundary insulating layer, a decrease in insulation resistance, etc. This caused a reduction in the reliability of electronic components, such as shortening product life. Therefore, in order to maintain the reliability of electronic components, it is important to prevent the plating liquid from penetrating into the 1IFL substrate 11 from the defective portions of the insulating layer 17. For this purpose, in the past, the insulating layer 17 was made thicker, and the substrate end faces 13a and 13b were
An insulating layer was formed on the
発明が解決しようとする課題
しかしながら、磁器基板11のA−B両面に塗布した絶
縁材料を同時に溶融・再硬化させて上下の絶縁層17.
17を形成する方法では、絶縁層17を厚くすることが
困難であったためピンホルや極端に薄い部分が生じ易か
った。このため、これら欠陥部分からメツキ液が磁器基
板11内に浸透し、電子部品の信頼性を低下させる原因
となっていた。Problems to be Solved by the Invention However, the upper and lower insulating layers 17.
In the method of forming the insulating layer 17, it was difficult to make the insulating layer 17 thick, so pinholes and extremely thin portions were likely to occur. For this reason, the plating liquid penetrates into the ceramic substrate 11 from these defective parts, causing a decrease in the reliability of the electronic component.
また、従来の製造方法では磁器基111ij11両面の
絶縁層17.17を同時に形成していたため、再硬化時
の温度パターンをよほどうまく調整しないと絶縁層17
の絶縁材料が溶は出して前記セッターや前記炉内壁に付
着し、絶縁層17に変形や厚みの不均一が生じるなど製
品の歩留りが低下する原因となっていた。In addition, in the conventional manufacturing method, the insulating layers 17 and 17 on both sides of the porcelain base 111ij11 were formed at the same time.
The insulating material melts and adheres to the setter and the inner wall of the furnace, causing deformation and uneven thickness of the insulating layer 17, resulting in a decrease in product yield.
さらに、上記した従来の絶縁層17の製造工程では、基
板端面13a、1.3bには絶縁層が形成されておらず
、これらの部分からメツキ液が磁器基板11に浸透する
ことも考えられるため、基板端面13a、L3bにも絶
縁層を形成することが望ましい。しかしながら、スクリ
ーン印刷などの手段により絶縁層材料を塗布して絶縁層
17を形成する方法では、基板端面13a、13bにも
絶縁層を形成する場合、基板端面13a、13bに絶縁
層材料を塗布する別工程がさらに必要になり、製造工程
が複雑になるという問題があった。Furthermore, in the conventional manufacturing process of the insulating layer 17 described above, an insulating layer is not formed on the substrate end faces 13a and 1.3b, and it is possible that the plating liquid may penetrate into the ceramic substrate 11 from these parts. , it is desirable to form an insulating layer also on the substrate end faces 13a and L3b. However, in the method of forming the insulating layer 17 by applying the insulating layer material by means such as screen printing, when the insulating layer is also formed on the substrate end surfaces 13a and 13b, the insulating layer material is applied to the substrate end surfaces 13a and 13b. There is a problem in that additional steps are required and the manufacturing process becomes complicated.
本発明は上記のような問題点に鑑みなされたものであっ
て、絶縁層を厚く形成できることにより欠陥部分が少な
い、従って信頼性の高い、しかも絶縁層形成中に絶縁層
材料が溶は出して製品歩留りが低下することのない電子
部品およびその製造方法を提供することを目的とし、さ
ら(こ工程を増やすことなく基板端面にも絶縁層を形成
できる方法を提供することを目的としている。The present invention has been made in view of the above-mentioned problems, and the insulating layer can be formed thickly, so there are fewer defects, and therefore the reliability is high.In addition, the insulating layer material does not melt out during the formation of the insulating layer. The purpose of this invention is to provide an electronic component and its manufacturing method that does not reduce product yield, and furthermore, to provide a method that allows an insulating layer to be formed on the end surface of a substrate without increasing the number of steps.
課題を解決するための−Illr′
上記目的を達成するため本発明は、基板の一面を含む部
分と他面を含む部分とにそれぞれ形成された対向電極と
、該対向電極に接続された端面電極と、前記基板両面に
形成されてこれら対向電極間を絶縁するための絶縁層と
を備えた電子部品において、前記基板両面に形成された
絶縁層の材料の軟化温度が異なることを特徴としている
。-Illr' To achieve the above object, the present invention provides a counter electrode formed on a portion including one surface of a substrate and a portion including the other surface, and an end surface electrode connected to the counter electrode. and an insulating layer formed on both sides of the substrate for insulating between these opposing electrodes, the electronic component is characterized in that the materials of the insulating layers formed on both sides of the substrate have different softening temperatures.
また、電子部品の製造方法において、基板の一面を含む
部分と他面を含む部分とにそれぞれ対向電極を形成し、
この後前記基板の一面に軟化温度の高い絶縁層材料を塗
布してその軟化温度付近の温度で焼成してから冷却し、
つぎに前記基板の他面に軟化温度の低い絶縁層の材料を
塗布してその軟化温度イ」近の温度で焼成してから冷却
する工程を含むことを特徴としている。Further, in the method for manufacturing an electronic component, a counter electrode is formed on a portion including one surface of the substrate and a portion including the other surface, respectively;
After that, an insulating layer material having a high softening temperature is applied to one surface of the substrate, and the material is fired at a temperature near the softening temperature, and then cooled.
Next, the method is characterized in that it includes a step of applying an insulating layer material having a low softening temperature to the other surface of the substrate, firing it at a temperature close to its softening temperature, and then cooling it.
また、上記電子部品の製造方法において、前記絶縁層材
料のいずれかまたは双方を基板より幅広に成形し、該成
形体と基板とを重ね合わせて焼成・冷却することにより
基板端面に絶縁層を形成することを特徴としている。Further, in the above method for manufacturing an electronic component, one or both of the insulating layer materials is molded to be wider than the substrate, and the molded body and the substrate are overlapped and fired and cooled to form an insulating layer on the end surface of the substrate. It is characterized by
作用
上記構成及び方法によれば、基板両面に形成された絶縁
層材料の軟化温度が異なっており、軟化温度の高い絶縁
層材料を塗布してその軟化温度付近の温度で焼成してか
ら冷却し、つぎに前記基板の他面に軟化温度の低い絶縁
層材料を塗布してその軟化温度付近の温度で焼成してか
ら冷却するので、軟化温度の低い絶縁層を形成する過程
において、すてに形成された軟化温度の高い絶縁層が溶
は出すことがない。したがって、絶縁層の形状を崩すこ
となく絶縁層材料を再硬化させることができるようにな
るため、絶縁層の厚みを大きくとることができ、ピンホ
ールや極端に薄い部分などの欠陥部分はほとんど生じな
くなる。Effects According to the above structure and method, the softening temperatures of the insulating layer materials formed on both sides of the substrate are different, and the insulating layer material having a high softening temperature is applied, fired at a temperature near the softening temperature, and then cooled. Next, an insulating layer material with a low softening temperature is applied to the other surface of the substrate, fired at a temperature near the softening temperature, and then cooled. The formed insulating layer with a high softening temperature will not melt. Therefore, the insulating layer material can be re-hardened without changing the shape of the insulating layer, making it possible to increase the thickness of the insulating layer and almost eliminate defects such as pinholes and extremely thin areas. It disappears.
また、上記した製造方法によれば基板端面に絶縁層を形
成する場合、絶縁層材料のいずれかまたは双方を基板よ
り幅広に成形し、該成形体と前記基板とを重ね合わせて
焼成するので、重ね合わせにより該基板からはみ出した
成形体の部分は焼成によって溶融すると基板端面を被覆
することとなり、特別の工程を設けなくても基板端面に
絶縁層を形成することができる。Further, according to the above manufacturing method, when forming an insulating layer on the end surface of a substrate, one or both of the insulating layer materials is molded to be wider than the substrate, and the molded body and the substrate are overlapped and fired. The portion of the molded body that protrudes from the substrate due to overlapping will be melted by firing and will cover the end surface of the substrate, making it possible to form an insulating layer on the end surface of the substrate without any special process.
簑雄側
以下、本発明にかかる電子部品の実施例を図面に基づい
て説明するものとし、本実施例では、コンデンサを例に
とって説明する。なお、本実施例の平面図には従来例の
説明で用いた第4図をそのまま使用するものとし、従来
例と同一構造の部分については同一の符合を(=lすこ
ととする。DESCRIPTION OF THE PREFERRED EMBODIMENTS Below, embodiments of electronic components according to the present invention will be described based on the drawings, and in this embodiment, a capacitor will be described as an example. It should be noted that FIG. 4 used in the explanation of the conventional example is used as the plan view of this embodiment, and parts having the same structure as the conventional example are given the same reference numerals (=l).
第1図および第4図において、磁器基板11の上面A
J3よび下面Bにそれぞれ対向電極12が形成され、対
向電極12.12の側面部外面には対向電極12と外部
電極との接続を行なう端面電極14が形成され、左右の
端面電極14.14外面にはN1メツキ層15とSnメ
ツキ(はんだメツキともいう)層16とが積層形成され
ている。このUn器基板11のA−B両面に、上下の対
向電極12.12問および左右の端面電極14.14間
を絶縁するための絶縁層30.31が形成されている。In FIGS. 1 and 4, the upper surface A of the ceramic substrate 11
Opposing electrodes 12 are formed on J3 and the lower surface B, respectively, and end electrodes 14 are formed on the outer surfaces of the side surfaces of the counter electrodes 12.12 to connect the counter electrodes 12 and external electrodes, and the left and right end electrodes 14. An N1 plating layer 15 and a Sn plating (also referred to as solder plating) layer 16 are laminated. Insulating layers 30 and 31 for insulating between the upper and lower opposing electrodes 12 and 12 and the left and right end face electrodes 14 and 14 are formed on both sides A-B of this unloader substrate 11.
これら絶縁層30.31の材料としてはガラス粉末が用
いられ、それぞれ軟化温度が異なるガラス粉末が用いら
れている。Glass powder is used as the material for these insulating layers 30 and 31, and each glass powder has a different softening temperature.
つぎに、本実施例にかかるコンデンサの製造方法につい
て説明する。Next, a method for manufacturing the capacitor according to this example will be explained.
まず、スリットが形成されている磁器素体にスクリーン
印刷により銀などの電極材料を塗布した後焼成すること
により対向電極12を形成し、この後前記スリット部で
カッティングを行なうことにより1個のコンデンサとな
る小片の磁器基板11に切り分ける。この後磁器基板1
1の端部に電極材料である銀ペーストの塗布・焼成を行
ない、端面電極14を形成する。First, an electrode material such as silver is coated by screen printing on a porcelain body with slits formed therein, and then fired to form the counter electrode 12. After that, cutting is performed at the slit portion to form one capacitor. Cut the ceramic substrate 11 into small pieces. After this, porcelain board 1
Silver paste, which is an electrode material, is applied and fired on the end of the electrode 1 to form an end electrode 14.
つぎに、軟化温度の異なる2種類の絶縁層材料にそれぞ
れバインダーであるビヒクルを加えてペースト状にし、
絶縁ペーストを作成する。Next, a vehicle, which is a binder, is added to two types of insulating layer materials with different softening temperatures to form a paste.
Create insulation paste.
そして、軟化温度の高い絶縁ペーストを磁器基板11の
一面A側にスクリーン印刷などにより塗布し、この面を
上にして乾燥後磁器基板11をセッター上に配置し、こ
のセッターを焼成炉内にセットし、この絶縁材料の軟化
温度付近の温度にまで加熱して溶融させ、この後冷却し
て再硬化させ、絶縁層30を形成する。つぎに、磁器基
板11の他面B側に軟化温度の低い絶縁ペーストを塗布
・乾燥し、この後この面を上にしてその軟化温度付近の
温度で焼成し、この後冷却(再硬化)して絶縁層31を
形成する。絶縁層31の焼成温度は絶縁層30の軟化温
度よりも低く設定されているので、先に形成した絶縁層
30が溶は出してセッターや炉内壁に付着することはな
い。Then, an insulating paste with a high softening temperature is applied to one side A side of the ceramic substrate 11 by screen printing or the like, and after drying, the ceramic substrate 11 is placed on a setter with this side facing up, and the setter is set in a firing furnace. Then, the insulating material is heated to a temperature close to the softening temperature of the insulating material to melt it, and then cooled and hardened again to form the insulating layer 30. Next, an insulating paste with a low softening temperature is applied and dried on the other surface B side of the ceramic substrate 11, and then this side is turned up and fired at a temperature around the softening temperature, and then cooled (rehardened). Then, an insulating layer 31 is formed. Since the firing temperature of the insulating layer 31 is set lower than the softening temperature of the insulating layer 30, the previously formed insulating layer 30 does not melt and adhere to the setter or the inner wall of the furnace.
つぎに、磁器基板11をメツキ液に浸漬することにより
端面電極14外面だけにN1メツキ層15とSnメツキ
層16を形成する。この場合、絶縁層30.31にはメ
ツキ液は付着しないので、磁器基板11をメツキ液に浸
漬するだけで端面電極14外面だけにメツキ層15.1
6を形成することができる。Next, the N1 plating layer 15 and the Sn plating layer 16 are formed only on the outer surface of the end electrode 14 by immersing the ceramic substrate 11 in a plating solution. In this case, since the plating liquid does not adhere to the insulating layer 30.31, the plating layer 15.1 is applied only to the outer surface of the end electrode 14 by simply immersing the ceramic substrate 11 in the plating liquid.
6 can be formed.
なお、上記製造工程においては、対向電極12の形成工
程と最後のメツキ工程の間にあるカッティング工程、絶
縁層形成工程および端面電極形成工程とはそれぞれ適宜
順序を入れ替えて実施することができる。In the above manufacturing process, the cutting process, the insulating layer forming process, and the end face electrode forming process, which are located between the forming process of the counter electrode 12 and the final plating process, can be carried out by changing the order of each as appropriate.
このようにして作製されたコンデンサの横断面(第4図
Y−Y線断面)を第2図に示す。図中、基板端面13a
、13bには絶縁層は形成されておらず、この部分に絶
縁層を形成する(こは別にスクリーン印刷などにより絶
縁層材料を塗布・焼成する必要がある。FIG. 2 shows a cross section of the capacitor thus produced (cross section taken along line Y--Y in FIG. 4). In the figure, the substrate end surface 13a
, 13b, no insulating layer is formed, and an insulating layer is formed in this portion (this requires separately applying and baking an insulating layer material by screen printing or the like).
つぎに、基板端面13a、13bに絶縁層を形成する場
合の実施例について説明する。この実施例では、軟化温
度の異なる2種類の絶縁層材料のいずれかまたは双方を
粉末のままで打錠成形を行なうことにより成形体となし
、この成形体を磁器基板11より幅広に形成しておき、
成形体と磁器基板11とを重ね合わせて焼成・冷却を行
ない、基板端面13a、13bに絶縁層を形成するもの
である。Next, an example in which an insulating layer is formed on the substrate end faces 13a and 13b will be described. In this example, one or both of two types of insulating layer materials having different softening temperatures are compressed into powders to form a molded body, and this molded body is formed to be wider than the ceramic substrate 11. Ok,
The molded body and the ceramic substrate 11 are stacked, fired and cooled to form an insulating layer on the substrate end faces 13a and 13b.
具体的な製造方法を第3図に基づき説明する。A specific manufacturing method will be explained based on FIG.
第3図に示すコンデンサの特徴はIi器基板11の上面
Aのみならず基板端面13a、13bにも絶縁層32が
形成されていることである。A feature of the capacitor shown in FIG. 3 is that an insulating layer 32 is formed not only on the upper surface A of the II device substrate 11 but also on the substrate end surfaces 13a and 13b.
このコンデンサを製造するには、前の実施例と同様に磁
器材料に対向電極12を形成した後カッティングを行な
い、できた磁器基板11に端面電極14を形成する。こ
の磁器基板11に軟化温度の高い絶縁層材料からなる成
形体33を重ね合わせて焼成・冷却を行ない、絶縁層3
0を形成する。一方軟化温度の低い絶縁層材料を磁器基
板11より幅広に成形しておき、この成形体34を磁器
基板ll上に置き焼成する。成形体34の磁器基板11
からはみ出した部分は、焼成により溶融して絶縁層32
a部分となり、基板端面13a、13bを被覆する。冷
却(再硬化)することにより磁器基板11上面から基板
端面]、3a、13bまでの部分に絶縁層32が形成さ
れる。なお、絶縁層32a部分は、成形体33により形
成されるものであってもよく、また成形体33.34の
双方により形成されるものであってもよい。この後、磁
器基板11をメツキ液に浸漬することにより端面電極1
4外面だけにNiメツキ層15とSnメツキ層16を形
成する(第1図)。To manufacture this capacitor, as in the previous embodiment, a counter electrode 12 is formed on a ceramic material and then cutting is performed, and an end electrode 14 is formed on the resulting ceramic substrate 11. A molded body 33 made of an insulating layer material with a high softening temperature is superimposed on this ceramic substrate 11, and the insulating layer 33 is fired and cooled.
form 0. On the other hand, an insulating layer material having a low softening temperature is molded to be wider than the ceramic substrate 11, and this molded body 34 is placed on the ceramic substrate 11 and fired. Porcelain substrate 11 of molded body 34
The portion protruding from the insulating layer 32 is melted by firing and becomes the insulating layer 32.
This becomes part a and covers the substrate end faces 13a and 13b. By cooling (re-hardening), an insulating layer 32 is formed from the top surface of the ceramic substrate 11 to the substrate end surface], 3a, and 13b. Note that the insulating layer 32a portion may be formed by the molded body 33, or may be formed by both the molded bodies 33 and 34. Thereafter, by immersing the ceramic substrate 11 in a plating solution, the end electrode 1
4. A Ni plating layer 15 and a Sn plating layer 16 are formed only on the outer surface (FIG. 1).
なお、本実施例では、カッティング工程の後に必ず絶縁
層30.32形成工程を実施しなければならないほかは
、端面電極14形成工程をカッティング工程の前あるい
は絶縁層30.32形成工程の後に実施してもよい。In addition, in this embodiment, except that the step of forming the insulating layer 30.32 must be carried out after the cutting step, the step of forming the end face electrode 14 is carried out before the cutting step or after the step of forming the insulating layer 30.32. It's okay.
上記実施例に用いる絶縁層30.31.32の材料とし
てのガラスの組成、軟化温度および焼成温度を第1表に
示す。Table 1 shows the composition, softening temperature, and firing temperature of the glass used as the material for the insulating layers 30, 31, and 32 used in the above examples.
(以下余白)
以上のようにして製造された電子部品としてのコンデン
サは、磁器基板11両面に形成された絶縁層30.31
.32における絶縁層材料の軟化温度が異なり、軟化温
度の高い絶縁層30について絶縁層材料の塗布・その軟
化温度付近の温度における焼成・冷却を先に行ない、こ
の後軟化温度の低い絶縁層31.32について同様に絶
縁層材料の塗布・その軟化温度付近の温度における焼成
・冷却を行なっているので、軟化温度の低い絶縁層31
.32を形成する過程において、すてに形成された軟化
温度の高い絶縁層30が溶は出すことがない。したがっ
て、絶縁層30の形状が変形したり厚みが不均一になっ
たりすることがないので、製品の歩留りを向上させるこ
とができる。(Left below) The capacitor as an electronic component manufactured as described above has insulating layers 30 and 31 formed on both sides of the ceramic substrate 11.
.. The softening temperatures of the insulating layer materials in 32 are different, and the insulating layer material 30 with a high softening temperature is first coated with the insulating layer material, fired at a temperature near its softening temperature, and cooled, and then the insulating layer 31 with a low softening temperature is coated. 32, the insulating layer material is similarly applied, baked at a temperature close to its softening temperature, and cooled, so that the insulating layer 31 has a low softening temperature.
.. In the process of forming the insulating layer 32, the previously formed insulating layer 30 having a high softening temperature does not melt. Therefore, the shape of the insulating layer 30 is not deformed or the thickness thereof is not uniform, so that the yield of products can be improved.
また、すでに形成された軟化温度の高い絶縁層30が溶
は出すことがないので、絶縁層30の形状を崩すことな
く絶縁層材料を再硬化させることができるようになり、
絶縁層の厚みを大きくとることが可能になる。したがっ
て、メツキ液が磁器基板11に浸透する原因となる、ピ
ンホールや極端に薄い部分などの欠陥部分はほとんど生
じないので、電子部品の信顆性を向上させることができ
る。In addition, since the insulating layer 30 that has already been formed and has a high softening temperature does not melt, the insulating layer material can be re-hardened without changing the shape of the insulating layer 30.
It becomes possible to increase the thickness of the insulating layer. Therefore, defective parts such as pinholes and extremely thin parts that cause the plating liquid to penetrate into the ceramic substrate 11 are hardly generated, so that the reliability of the electronic component can be improved.
さらに基板端面13a、13bに絶縁層32aを形成す
る場合、絶縁層材料の成形体34を磁器基板11より幅
広に形成しておき、該成形体34と磁器基板11とを重
ね合わせて焼成するので、磁器基板11からはみ出した
成形体34の部分は焼成によって溶融すると基板端面1
3a、13bを波頂し、これらの部分に絶縁層32aを
形成することができる。したがって、工程を増やすこと
なく基板端面13.a、13bに絶縁層32aを容易に
形成できるので、メツキ液が基板端面13a、13bか
ら磁器基板11に浸透するのを阻止することが可能にな
る6
なお、本発明は、コンデンサに限らず、絶縁層を形成す
るすべての電子部品に適用されることはもちろんである
。Furthermore, when forming the insulating layer 32a on the substrate end faces 13a, 13b, the molded body 34 of the insulating layer material is formed wider than the ceramic substrate 11, and the molded body 34 and the ceramic substrate 11 are overlapped and fired. When the part of the molded body 34 protruding from the ceramic substrate 11 is melted by firing, the end surface 1 of the substrate is melted.
3a and 13b can be crested, and an insulating layer 32a can be formed in these parts. Therefore, without increasing the number of steps, the substrate end face 13. Since the insulating layer 32a can be easily formed on the substrate edges 13a and 13b, it is possible to prevent the plating liquid from penetrating into the ceramic substrate 11 from the substrate end surfaces 13a and 13b.6 Note that the present invention is not limited to capacitors. Needless to say, the present invention is applied to all electronic components that form an insulating layer.
聚肌辺苅逮
以上の説明により明らかなように、本発明にかかる電子
部品およびその製造方法にあっては、基板両面に形成さ
れた絶縁層の材料の軟化温度が異なり、軟化温度の高い
絶縁層について絶縁層材料の塗布・その軟化温度付近の
温度における焼成・冷却を先に行ない、つぎに軟化温度
の低い絶縁層について同様に絶縁層材料の塗布・その軟
化温度付近の温度における焼成・冷却を行なっているの
で、軟化温度の低い絶縁層を形成する過程において、す
でに形成された軟化温度の高い絶縁層が溶は出すことが
ない。したがって、絶縁層が変形したり厚みが不均一に
なることがないので、製品の歩留りを向上させることが
できる。As is clear from the above explanation, in the electronic component and the manufacturing method thereof according to the present invention, the softening temperatures of the materials of the insulating layers formed on both sides of the substrate are different, and the insulating layer has a high softening temperature. The layer is first coated with an insulating layer material, baked at a temperature near its softening temperature, and cooled. Next, the insulating layer material with a low softening temperature is similarly coated, baked at a temperature near its softening temperature, and cooled. Therefore, in the process of forming an insulating layer with a low softening temperature, the already formed insulating layer with a high softening temperature does not melt. Therefore, the insulating layer will not be deformed or the thickness will not be non-uniform, so the yield of products can be improved.
また、すでに形成された軟化温度の高い絶縁層が溶は出
すことがないので、絶縁層の形状を崩すことなく絶縁層
材料を再硬化させることができることになり、絶縁層の
厚みを大きくとることが可能になる。したがって、メツ
キ液が磁器基板に浸透する原因となる、ピンホールや極
端に薄い部分などの欠陥部分は減少するので、電子部品
の信頼性を向上させることができる。In addition, since the insulating layer that has already been formed with a high softening temperature will not melt, the insulating layer material can be re-hardened without changing the shape of the insulating layer, making it possible to increase the thickness of the insulating layer. becomes possible. Therefore, defects such as pinholes and extremely thin parts that cause the plating liquid to penetrate into the ceramic substrate are reduced, thereby improving the reliability of the electronic component.
さらに基板端面に絶縁層を形成する場合、絶縁層材料の
いずれかまたは双方を基板より幅広に成形し、該成形体
と基板とを重ね合わせて焼成するので、重ね合わせによ
り基板からはみ出した成形体の部分は焼成によって溶融
すると基板端面な被覆して基板端面に絶縁層を形成する
ことができる。したがって、工程を増やすことなく基板
端面に絶縁層を容易に形成でき、メツキ液が基板端面か
ら磁器基板に浸透するのを阻止することが容易に可能と
なる。Furthermore, when forming an insulating layer on the end surface of the substrate, one or both of the insulating layer materials is molded to be wider than the substrate, and the molded body and the substrate are overlapped and fired, so that the molded body protrudes from the substrate due to overlapping. When the portion is melted by firing, it can cover the end surface of the substrate to form an insulating layer on the end surface of the substrate. Therefore, an insulating layer can be easily formed on the end face of the substrate without increasing the number of steps, and it is easily possible to prevent the plating liquid from penetrating into the ceramic substrate from the end face of the substrate.
第1図は本発明にかかる電子部品としてのコンデンサの
実施例であって第4図におけるX−X線断面図、第2図
は同電子部品の第4図におけるY−Y線断面図、第3図
は電子部品の製造方法の別の実施例を示す第4図におけ
るY−Y線断面図、第4図は従来及び本発明に係る電子
部品を示す平面図、第5図は第4図におけるx−x’、
ys断面図、第6図は第4図におけるY −Y 19断
面図てあ11・・・磁器基板(基板)、12・対向電極
、13a、13b・・・基板端面、14・・・端面電極
、30・・・軟化温度の高い絶縁層、31.32・・軟
化温度の低い絶縁層、33・・軟化温度の高い成形体、
34・・・軟化温度の低い成形体、A・・・基板の面、
B・・・基板の他面FIG. 1 shows an embodiment of a capacitor as an electronic component according to the present invention, and FIG. 2 is a sectional view taken along the line X-X in FIG. 4, and FIG. 3 is a cross-sectional view taken along line Y-Y in FIG. 4 showing another example of a method for manufacturing an electronic component, FIG. 4 is a plan view showing electronic components according to the conventional and the present invention, and FIG. x-x' at
ys sectional view, FIG. 6 is a Y-Y 19 sectional view in FIG. , 30... Insulating layer with high softening temperature, 31. 32... Insulating layer with low softening temperature, 33... Molded body with high softening temperature,
34...Molded body with low softening temperature, A...Substrate surface,
B...Other side of the board
Claims (3)
ぞれ形成された対向電極と、該対向電極に接続された端
部電極と、前記基板両面に形成されてこれら対向電極間
を絶縁するための絶縁層とを備えた電子部品において、
前記基板両面に形成された絶縁層の材料の軟化温度が異
なることを特徴とする電子部品。(1) A counter electrode formed on a portion including one surface of the substrate and a portion including the other surface, an end electrode connected to the counter electrode, and an insulation between these counter electrodes formed on both surfaces of the substrate. In an electronic component equipped with an insulating layer for
An electronic component characterized in that the materials of the insulating layers formed on both sides of the substrate have different softening temperatures.
ぞれ対向電極を形成し、この後前記基板の一面に軟化温
度の高い絶縁層材料を塗布してその軟化温度付近の温度
で焼成してから冷却し、つぎに前記基板の他面に軟化温
度の低い絶縁層材料を塗布してその軟化温度付近の温度
で焼成してから冷却する工程を含むことを特徴とする電
子部品の製造方法。(2) Opposing electrodes are formed on a portion including one side of the substrate and a portion including the other side, and then an insulating layer material with a high softening temperature is applied to one side of the substrate and baked at a temperature near the softening temperature. manufacturing an electronic component, comprising the steps of applying an insulating layer material with a low softening temperature to the other surface of the substrate, firing it at a temperature near the softening temperature, and cooling the substrate. Method.
を基板より幅広に成形し、該成形体と基板とを重ね合わ
せて焼成・冷却することにより基板端面に絶縁層を形成
する工程を含む電子部品の製造方法。(3) forming an insulating layer on the end surface of the substrate by forming one or both of the insulating layer materials according to claim 2 to be wider than the substrate, overlapping the formed body and the substrate, and firing and cooling the formed body; Methods for manufacturing electronic components including;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1118338A JPH02296312A (en) | 1989-05-10 | 1989-05-10 | Electronic component and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1118338A JPH02296312A (en) | 1989-05-10 | 1989-05-10 | Electronic component and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02296312A true JPH02296312A (en) | 1990-12-06 |
Family
ID=14734202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1118338A Pending JPH02296312A (en) | 1989-05-10 | 1989-05-10 | Electronic component and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02296312A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04218765A (en) * | 1990-03-26 | 1992-08-10 | Toshiba Corp | Ultrasonic probe |
| JPH0538802U (en) * | 1991-10-25 | 1993-05-25 | テイーデイーケイ株式会社 | Chip thermistor |
-
1989
- 1989-05-10 JP JP1118338A patent/JPH02296312A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04218765A (en) * | 1990-03-26 | 1992-08-10 | Toshiba Corp | Ultrasonic probe |
| JPH0538802U (en) * | 1991-10-25 | 1993-05-25 | テイーデイーケイ株式会社 | Chip thermistor |
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