JPH0237102B2 - - Google Patents

Info

Publication number
JPH0237102B2
JPH0237102B2 JP55176680A JP17668080A JPH0237102B2 JP H0237102 B2 JPH0237102 B2 JP H0237102B2 JP 55176680 A JP55176680 A JP 55176680A JP 17668080 A JP17668080 A JP 17668080A JP H0237102 B2 JPH0237102 B2 JP H0237102B2
Authority
JP
Japan
Prior art keywords
transistor
transistors
resistor
resistors
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55176680A
Other languages
Japanese (ja)
Other versions
JPS57100756A (en
Inventor
Kazumasa Nawata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55176680A priority Critical patent/JPS57100756A/en
Publication of JPS57100756A publication Critical patent/JPS57100756A/en
Publication of JPH0237102B2 publication Critical patent/JPH0237102B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/901Masterslice integrated circuits comprising bipolar technology

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Description

【発明の詳細な説明】 本発明は複数種類の素子が接続されて所定の機
能を有する集積回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an integrated circuit having a predetermined function by connecting a plurality of types of elements.

一般に集積回路では、チツプ外のデバイスを駆
動するために、チツプ内の回路を駆動するよりも
駆動能力の大きな素子を必要とする場合がある。
Generally, in integrated circuits, in order to drive devices outside the chip, an element with a larger driving capacity than that for driving circuits inside the chip may be required.

このため従来は、例えばトランジスタのパター
ンをチツプ内用のトランジスタよりも大きくして
いた。
For this reason, conventionally, for example, the pattern of a transistor has been made larger than that of a transistor for use within a chip.

しかし、高集積化が集むにつれてパターンが複
雑化すると、同じトランジスタについてもパター
ンの大きさを異ならせることは設計の繁雑さをも
たらす。例えばチツプ内部の回路においても、一
部の回路について伝播遅延時間や、消費電力をチ
ツプ内の他の回路とは異なる所望の値に設定した
い場合等にはパターン寸法を変えなければならな
い。
However, as patterns become more complex as devices become more highly integrated, having different pattern sizes for the same transistor complicates the design. For example, even in circuits inside a chip, if it is desired to set the propagation delay time or power consumption of some circuits to desired values different from those of other circuits within the chip, the pattern dimensions must be changed.

本発明は従来のこのような欠点を解決し、設計
が容易でしかも所望の特性を容易に得ることので
きる集積回路を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to solve these conventional drawbacks and provide an integrated circuit that is easy to design and can easily obtain desired characteristics.

このような本発明の特徴は、エミツタが互いに
接続された第1、第2のトランジスタと、該第
1、第2のトランジスタのそれぞれのコレクタと
第1の電源間に接続された第1、第2の抵抗と、
該第1のトランジスタのコレクタにベースが接続
された該第1の電源にコレクタが接続された第3
のトランジスタと、該第2のトランジスタのコレ
クタにベースが接続され該第1の電源にコレクタ
が接続された第4のトランジスタと、該第3のト
ランジスタのエミツタと第2の電源間に接続され
た第3の抵抗と、該第4のトランジスタのエミツ
タと第2の電源間に接続された第4の抵抗と、該
第1、第2のトランジスタのエミツタと第2の電
源間に接続された第5のトランジスタと第5の抵
抗とを有しECL回路を構成する集積回路におい
て、前記トランジスタ及び抵抗とそれぞれ同じパ
ターン寸法のトランジスタ及び抵抗が設けられ、
トランジスタ及び抵抗のすべての素子がそれぞれ
同じパターン寸法のトランジスタ及び抵抗どうし
所定の複数個が並列に接続されて成ることにあ
る。
Such features of the present invention include first and second transistors whose emitters are connected to each other, and first and second transistors whose emitters are connected between the respective collectors of the first and second transistors and a first power supply. 2 resistance and
a third transistor whose collector is connected to the first power supply and whose base is connected to the collector of the first transistor;
a fourth transistor having a base connected to the collector of the second transistor and a collector connected to the first power source, and a fourth transistor connected between the emitter of the third transistor and the second power source. a third resistor, a fourth resistor connected between the emitter of the fourth transistor and the second power supply, and a fourth resistor connected between the emitters of the first and second transistors and the second power supply. In an integrated circuit having a fifth transistor and a fifth resistor and forming an ECL circuit, a transistor and a resistor having the same pattern dimensions as the transistor and the resistor, respectively, are provided,
All of the transistors and resistors are formed by connecting a predetermined plurality of transistors and resistors in parallel, each having the same pattern size.

以下、図面を用いて本発明を説明する。 The present invention will be explained below using the drawings.

第1図は従来のECL(Emitter Coupled Logic)
回路の例を示す図で、T1〜T5はトランジスタ、
R1〜R5は抵抗、VINは信号入力端子、Vrefは第1
の基準電圧端子、VBBは第2の基準電圧端子を示
す。
Figure 1 shows conventional ECL (Emitter Coupled Logic)
In the diagram showing an example of the circuit, T1 to T5 are transistors,
R 1 to R 5 are resistors, V IN is the signal input terminal, and Vref is the first
The reference voltage terminal of V BB indicates the second reference voltage terminal.

このようなECL回路をおいて、本発明では第
2図に示すように、トランジスタT1〜T5に対し
てトランジスタT1′〜T5′を、抵抗R1〜R5に対し
て抵抗R1′〜R5′を配置しておき、かつ選択的に
(本実施例では全ての素子を)並列接続した。こ
れにより消費電力は増加するが、ECL回路とし
ての駆動能力を増大させることができる。
In the present invention, as shown in FIG. 2, in such an ECL circuit, transistors T1 ' to T5' are connected to transistors T1 to T5 , and resistors R 1 ' to R5 ' were arranged and selectively connected in parallel (in this example, all the elements). Although this increases power consumption, it is possible to increase the driving capability of the ECL circuit.

ここで配置した素子は、第1図に示す従来の素
子と同じ寸法のパターンにより形成されている。
The elements arranged here are formed by a pattern with the same dimensions as the conventional elements shown in FIG.

もちろん必要に応じて所望の素子のみを接続
し、その他の配置した素子は接続を行なわないよ
うにすることによつて、同一パターンの素子を配
置するだけで前記の遅延時間等の所望の特性を容
易に得ることができる。また、ECL回路では、
特に論理振幅が小さく、バイアス条件を設定する
ための抵抗を高精度に製造しなければならない
が、本発明のように各抵抗を並列接続すれば、例
えば2個並列の場合、一方の抵抗が設計値より大
きくずれた値に製造されても、他方の抵抗がほぼ
設計値どうりであれば、並列抵抗の誤差は小さく
なり、誤差の小さい抵抗が得られ、ECL回路と
して大きな効果を奏する。
Of course, by connecting only desired elements as necessary and leaving other placed elements unconnected, desired characteristics such as the delay time can be achieved simply by arranging elements of the same pattern. can be obtained easily. Also, in the ECL circuit,
In particular, the logic amplitude is small, and the resistors for setting bias conditions must be manufactured with high precision. However, if each resistor is connected in parallel as in the present invention, for example, if two resistors are connected in parallel, one resistor is designed Even if a resistor is manufactured to a value that deviates greatly from the value, if the other resistor is approximately the same as the designed value, the error in the parallel resistor will be small, a resistor with a small error will be obtained, and it will be highly effective as an ECL circuit.

以上説明したように、本発明によれば容易に所
望の特性を有する集積回路を得られる。
As explained above, according to the present invention, an integrated circuit having desired characteristics can be easily obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の回路例を示す図、第2図は本発
明の一実施例を示す図である。 T1〜T5,T1′〜T5′:トランジスタ、R1〜R5
R1′〜R5′:抵抗。
FIG. 1 is a diagram showing an example of a conventional circuit, and FIG. 2 is a diagram showing an embodiment of the present invention. T 1 to T 5 , T 1 ′ to T 5 ′: Transistor, R 1 to R 5 ,
R 1 ′ to R 5 ′: Resistance.

Claims (1)

【特許請求の範囲】 1 エミツタが互いに接続された第1、第2のト
ランジスタT1,T2と、 該第1、第2のトランジスタT1,T2のそれぞ
れのコレクタと第1の電源間に接続された第1、
第2の抵抗R1,R2と、 該第1のトランジスタT1のコレクタにベース
が接続され該第1の電源にコレクタが接続された
第3のトランジスタT4と、 該第2のトランジスタT2のコレクタにベース
が接続され該第1の電源にコレクタが接続された
第4のトランジスタT3と、 該第3のトランジスタT4のエミツタと第2の
電源間に接続された第3の抵抗R4と、 該第4のトランジスタT3のエミツタと第2の
電源間に接続された第4の抵抗R5と、 該第1、第2のトランジスタT1,T2のエミツ
タと第2の電源間に接続された第5のトランジス
タT5と第5の抵抗R3とを有しECL回路を構成す
る集積回路において、 前記各トランジスタT1,T2,T3,T4,T5及び
抵抗R1,R2,R3,R4,R5とそれぞれ同じパター
ン寸法のトランジスタT′1,T′2,T′3,T′4,T′5
及び抵抗R′1,R′2,R′3,R′4,R′5が設けられ、
トランジスタ及び抵抗のすべての素子がそれぞれ
同じパターン寸法のトランジスタ及び抵抗どうし
所定の複数個が並列に接続されて成ることを特徴
とする集積回路。
[Claims] 1. First and second transistors T 1 and T 2 whose emitters are connected to each other, and between the respective collectors of the first and second transistors T 1 and T 2 and a first power supply. the first, connected to
second resistors R 1 and R 2 ; a third transistor T 4 whose base is connected to the collector of the first transistor T 1 and whose collector is connected to the first power supply; and the second transistor T a fourth transistor T3 whose base is connected to the collector of the third transistor T3 and whose collector is connected to the first power supply; and a third resistor connected between the emitter of the third transistor T4 and the second power supply. R4 , a fourth resistor R5 connected between the emitter of the fourth transistor T3 and the second power supply, and a resistor R5 connected between the emitters of the first and second transistors T1 and T2 and the second power supply. In an integrated circuit constituting an ECL circuit having a fifth transistor T 5 and a fifth resistor R 3 connected between power supplies, each of the transistors T 1 , T 2 , T 3 , T 4 , T 5 and Transistors T ′ 1 , T ′ 2 , T ′ 3 , T′ 4 , T ′ 5 with the same pattern dimensions as the resistors R 1 , R 2 , R 3 , R 4 , R 5 , respectively.
and resistors R′ 1 , R′ 2 , R′ 3 , R′ 4 , R′ 5 are provided,
An integrated circuit characterized in that all elements of transistors and resistors are formed by connecting a predetermined plurality of transistors and resistors in parallel, each having the same pattern size.
JP55176680A 1980-12-15 1980-12-15 Integrated circuit Granted JPS57100756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176680A JPS57100756A (en) 1980-12-15 1980-12-15 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176680A JPS57100756A (en) 1980-12-15 1980-12-15 Integrated circuit

Publications (2)

Publication Number Publication Date
JPS57100756A JPS57100756A (en) 1982-06-23
JPH0237102B2 true JPH0237102B2 (en) 1990-08-22

Family

ID=16017837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176680A Granted JPS57100756A (en) 1980-12-15 1980-12-15 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS57100756A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833852A (en) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp Large scale semiconductor integrated circuit device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5561059A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor ic device

Also Published As

Publication number Publication date
JPS57100756A (en) 1982-06-23

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