JPH0260053B2 - - Google Patents

Info

Publication number
JPH0260053B2
JPH0260053B2 JP59267941A JP26794184A JPH0260053B2 JP H0260053 B2 JPH0260053 B2 JP H0260053B2 JP 59267941 A JP59267941 A JP 59267941A JP 26794184 A JP26794184 A JP 26794184A JP H0260053 B2 JPH0260053 B2 JP H0260053B2
Authority
JP
Japan
Prior art keywords
chamber
partition door
partition
opening
middle chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59267941A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61144016A (ja
Inventor
Takao Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59267941A priority Critical patent/JPS61144016A/ja
Publication of JPS61144016A publication Critical patent/JPS61144016A/ja
Publication of JPH0260053B2 publication Critical patent/JPH0260053B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59267941A 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置 Granted JPS61144016A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59267941A JPS61144016A (ja) 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267941A JPS61144016A (ja) 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置

Publications (2)

Publication Number Publication Date
JPS61144016A JPS61144016A (ja) 1986-07-01
JPH0260053B2 true JPH0260053B2 (2) 1990-12-14

Family

ID=17451729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267941A Granted JPS61144016A (ja) 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置

Country Status (1)

Country Link
JP (1) JPS61144016A (2)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101157201B1 (ko) 2010-04-30 2012-06-20 주식회사 테라세미콘 Cigs층 형성장치

Also Published As

Publication number Publication date
JPS61144016A (ja) 1986-07-01

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