JPH0335830B2 - - Google Patents
Info
- Publication number
- JPH0335830B2 JPH0335830B2 JP56111868A JP11186881A JPH0335830B2 JP H0335830 B2 JPH0335830 B2 JP H0335830B2 JP 56111868 A JP56111868 A JP 56111868A JP 11186881 A JP11186881 A JP 11186881A JP H0335830 B2 JPH0335830 B2 JP H0335830B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- pad
- substrate
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/412—Deposition of metallic or metal-silicide materials
Landscapes
- Recrystallisation Techniques (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111868A JPS5814526A (ja) | 1981-07-17 | 1981-07-17 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111868A JPS5814526A (ja) | 1981-07-17 | 1981-07-17 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814526A JPS5814526A (ja) | 1983-01-27 |
| JPH0335830B2 true JPH0335830B2 (2) | 1991-05-29 |
Family
ID=14572173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56111868A Granted JPS5814526A (ja) | 1981-07-17 | 1981-07-17 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814526A (2) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61179523A (ja) * | 1985-02-05 | 1986-08-12 | Agency Of Ind Science & Technol | 単結晶薄膜形成方法 |
| JPH02246267A (ja) * | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | 半導体装置の製造方法 |
| KR0161112B1 (ko) * | 1995-01-11 | 1999-02-01 | 문정환 | 반도체 소자 격리방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116627A (en) * | 1980-02-20 | 1981-09-12 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Thin film semiconductor device |
-
1981
- 1981-07-17 JP JP56111868A patent/JPS5814526A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814526A (ja) | 1983-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2615390B2 (ja) | 炭化シリコン電界効果トランジスタの製造方法 | |
| US20090298258A1 (en) | QUASI-HYDROPHOBIC Si-Si WAFER BONDING USING HYDROPHILIC Si SURFACES AND DISSOLUTION OF INTERFACIAL BONDING OXIDE | |
| JPH02283014A (ja) | 支持体上に結晶材料のシートを形成する方法 | |
| US4588447A (en) | Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films | |
| JPS6359251B2 (2) | ||
| JPH0335830B2 (2) | ||
| JPH0628282B2 (ja) | 半導体装置の製造方法 | |
| JPH02246267A (ja) | 半導体装置の製造方法 | |
| JPS6234152B2 (2) | ||
| JP2718074B2 (ja) | 薄膜半導体層の形成方法 | |
| JPS58175844A (ja) | 半導体装置の製造方法 | |
| JPS6136381B2 (2) | ||
| JPS5885520A (ja) | 半導体装置の製造方法 | |
| JPH03125458A (ja) | 単結晶領域の形成方法及びそれを用いた結晶物品 | |
| JPH0468770B2 (2) | ||
| JPS6359538B2 (2) | ||
| JPS58114419A (ja) | 半導体装置用基板の製造方法 | |
| JPH0628281B2 (ja) | 半導体装置の製造方法 | |
| JPH0396222A (ja) | 単結晶Ｓｉ膜の形成方法 | |
| JPS61117821A (ja) | 半導体装置の製造方法 | |
| JPS594116A (ja) | 半導体装置の製造方法 | |
| KR19990021370A (ko) | 반도체 장치의 소자 분리 방법 | |
| JPS6248015A (ja) | 半導体層の固相成長方法 | |
| JPH09266170A (ja) | 半導体装置の製造方法 | |
| JPH04119648A (ja) | 半導体装置の製造方法 |