JPH0341847U - - Google Patents

Info

Publication number
JPH0341847U
JPH0341847U JP10291489U JP10291489U JPH0341847U JP H0341847 U JPH0341847 U JP H0341847U JP 10291489 U JP10291489 U JP 10291489U JP 10291489 U JP10291489 U JP 10291489U JP H0341847 U JPH0341847 U JP H0341847U
Authority
JP
Japan
Prior art keywords
chamber
film
forming
substrate
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10291489U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10291489U priority Critical patent/JPH0341847U/ja
Publication of JPH0341847U publication Critical patent/JPH0341847U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例による成膜装置用チ
ヤンバを示す断面正面図、第２図は前記チヤンバ
が採用された成膜室及びガス導入系を示す図であ
る。 １……成膜用チヤンバ、２……ガス導入系、１
５……内側チヤンバ、１６……外側チヤンバ、２
１……ヒータ。

Claims (1)

  1. 【実用新案登録請求の範囲】 液化材料を気化して得られた反応ガスを成膜用
    チヤンバに導入し、この反応ガスを分解して前記
    成膜用チヤンバ内の基板表面に薄膜を形成する成
    膜装置用チヤンバであつて、 成膜すべき基板が収容され反応ガスが導入され
    る内側チヤンバと、前記内側チヤンバの周囲に断
    熱層を介して設けられた外側チヤンバとを備えた
    成膜装置用チヤンバ。
JP10291489U 1989-08-31 1989-08-31 Pending JPH0341847U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10291489U JPH0341847U (ja) 1989-08-31 1989-08-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10291489U JPH0341847U (ja) 1989-08-31 1989-08-31

Publications (1)

Publication Number Publication Date
JPH0341847U true JPH0341847U (ja) 1991-04-22

Family

ID=31651783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10291489U Pending JPH0341847U (ja) 1989-08-31 1989-08-31

Country Status (1)

Country Link
JP (1) JPH0341847U (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05148654A (ja) * 1991-11-28 1993-06-15 Shinko Seiki Co Ltd パルスプラズマｃｖｄによる成膜方法及びその装置
JPH07106259A (ja) * 1993-10-04 1995-04-21 Sumitomo Metal Ind Ltd 薄膜形成装置及び薄膜形成方法
JP2008159945A (ja) * 2006-12-25 2008-07-10 Tokyo Electron Ltd 成膜装置および成膜方法
WO2022255215A1 (ja) * 2021-06-04 2022-12-08 東京エレクトロン株式会社 基板処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05148654A (ja) * 1991-11-28 1993-06-15 Shinko Seiki Co Ltd パルスプラズマｃｖｄによる成膜方法及びその装置
JPH07106259A (ja) * 1993-10-04 1995-04-21 Sumitomo Metal Ind Ltd 薄膜形成装置及び薄膜形成方法
JP2008159945A (ja) * 2006-12-25 2008-07-10 Tokyo Electron Ltd 成膜装置および成膜方法
WO2022255215A1 (ja) * 2021-06-04 2022-12-08 東京エレクトロン株式会社 基板処理装置

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