JPH0345554B2 - - Google Patents

Info

Publication number
JPH0345554B2
JPH0345554B2 JP56186316A JP18631681A JPH0345554B2 JP H0345554 B2 JPH0345554 B2 JP H0345554B2 JP 56186316 A JP56186316 A JP 56186316A JP 18631681 A JP18631681 A JP 18631681A JP H0345554 B2 JPH0345554 B2 JP H0345554B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
discharge
insulating film
silicon layer
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56186316A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5886776A (ja
Inventor
Kyohiro Kawasaki
Shinichiro Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56186316A priority Critical patent/JPS5886776A/ja
Publication of JPS5886776A publication Critical patent/JPS5886776A/ja
Publication of JPH0345554B2 publication Critical patent/JPH0345554B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP56186316A 1981-11-19 1981-11-19 Ｍｏｓ型トランジスタの製造方法 Granted JPS5886776A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56186316A JPS5886776A (ja) 1981-11-19 1981-11-19 Ｍｏｓ型トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56186316A JPS5886776A (ja) 1981-11-19 1981-11-19 Ｍｏｓ型トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5886776A JPS5886776A (ja) 1983-05-24
JPH0345554B2 true JPH0345554B2 (de) 1991-07-11

Family

ID=16186194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56186316A Granted JPS5886776A (ja) 1981-11-19 1981-11-19 Ｍｏｓ型トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5886776A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159873A (ja) * 1984-08-31 1986-03-27 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタおよびその製造方法
JP2937318B2 (ja) * 1988-02-25 1999-08-23 富士通株式会社 アモルファスシリコン薄膜トランジスタ
JP2009105390A (ja) 2007-10-05 2009-05-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Also Published As

Publication number Publication date
JPS5886776A (ja) 1983-05-24

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