JPH0350324U - - Google Patents

Info

Publication number
JPH0350324U
JPH0350324U JP1989109677U JP10967789U JPH0350324U JP H0350324 U JPH0350324 U JP H0350324U JP 1989109677 U JP1989109677 U JP 1989109677U JP 10967789 U JP10967789 U JP 10967789U JP H0350324 U JPH0350324 U JP H0350324U
Authority
JP
Japan
Prior art keywords
substrate
support
opening
support plate
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1989109677U
Other languages
English (en)
Other versions
JPH06818Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989109677U priority Critical patent/JPH06818Y2/ja
Priority to KR1019910700507A priority patent/KR950013428B1/ko
Priority to PCT/JP1990/001182 priority patent/WO1991004572A1/ja
Priority to EP90913542A priority patent/EP0444205B1/en
Priority to DE69024478T priority patent/DE69024478T2/de
Publication of JPH0350324U publication Critical patent/JPH0350324U/ja
Application granted granted Critical
Publication of JPH06818Y2 publication Critical patent/JPH06818Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】
第１図は、本考案に従つた、基板支持装置の一
部断面図である。第２図は、ホツトウオール型の
ＣＶＤ装置に使用する本考案の基板支持装置の他
の実施例の一部断面図である。第３図は、従来の
基板支持装置が配置されたベルジヤー型のＣＶＤ
装置の略示断面図である。第４図は、従来の基板
支持装置に使用された支持板の斜視図である。第
５図は、第４図の従来の基板支持装置の一部断面
図を示す。 主要符号の説明、１……石英管、２……支持体
、３……支持板、４……開口、５……クリツプ、
６，６′……基板、１２……支持体、１３，２３
，３３……支持板、１４，２４，３４……開口、
１５，２５，３５……クリツプ、１６，２６，３
６……基板、Ａ……基板支持装置。

Claims (1)

  1. 【実用新案登録請求の範囲】 １ 複数の処理すべき基板のそれぞれを支持する
    、平行に配列された複数の支持板を有する基板支
    持装置であつて、 前記各支持板が、その中央に開口を有し、かつ
    前記基板を前記支持板から離して、前記開口上に
    支持するための複数のクリツプをその開口の周囲
    に沿つて有し、 前記支持板の開口の大きさが２種類以上異なる
    、 ところの基板支持装置。 ２ 複数の基板上にＣＶＤにより薄膜を形成する
    ＣＶＤ装置において、 前記複数の基板のそれぞれを支持する、平行に
    配列された複数の支持板を有する基板支持装置が
    ＣＶＤ装置内に設置され、 前記各支持板が、その中央に開口を有し、かつ
    前記基板を前記支持板から離して、前記開口上に
    支持するための複数の基板支持用のクリツプをそ
    の開口の周囲に沿つて有し、 前記支持板の開口の大きさが２種類以上異なる
    、 ところのＣＶＤ装置。
JP1989109677U 1989-09-21 1989-09-21 Ｃｖｄ装置のための基板支持装置 Expired - Lifetime JPH06818Y2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1989109677U JPH06818Y2 (ja) 1989-09-21 1989-09-21 Ｃｖｄ装置のための基板支持装置
KR1019910700507A KR950013428B1 (ko) 1989-09-21 1990-09-14 Cvd장치를 위한 기판 지지 장치
PCT/JP1990/001182 WO1991004572A1 (fr) 1989-09-21 1990-09-14 Dispositif de support de substrat pour appareil cvd
EP90913542A EP0444205B1 (en) 1989-09-21 1990-09-14 Substrate support device for cvd apparatus
DE69024478T DE69024478T2 (de) 1989-09-21 1990-09-14 Substratträgeranordnung für chemische dampfniederschlagvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989109677U JPH06818Y2 (ja) 1989-09-21 1989-09-21 Ｃｖｄ装置のための基板支持装置

Publications (2)

Publication Number Publication Date
JPH0350324U true JPH0350324U (ja) 1991-05-16
JPH06818Y2 JPH06818Y2 (ja) 1994-01-05

Family

ID=14516382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989109677U Expired - Lifetime JPH06818Y2 (ja) 1989-09-21 1989-09-21 Ｃｖｄ装置のための基板支持装置

Country Status (5)

Country Link
EP (1) EP0444205B1 (ja)
JP (1) JPH06818Y2 (ja)
KR (1) KR950013428B1 (ja)
DE (1) DE69024478T2 (ja)
WO (1) WO1991004572A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043478A1 (ja) * 2005-10-11 2007-04-19 Tokyo Electron Limited 基板処理装置及び基板処理方法
JP2014207435A (ja) * 2013-03-21 2014-10-30 東京エレクトロン株式会社 バッチ式縦型基板処理装置および基板保持具

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101680950B1 (ko) * 2012-02-16 2016-11-29 쌩-고벵 글래스 프랑스 코팅된 기판을 처리하기 위한 처리 박스, 장치 및 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108735A (ja) * 1981-12-23 1983-06-28 Fujitsu Ltd 縦型反応管用バスケツト
JPS59117138U (ja) * 1983-01-27 1984-08-07 日本電気ホームエレクトロニクス株式会社 半導体製造装置
JPS6252929U (ja) * 1985-09-21 1987-04-02
JPS62142839U (ja) * 1986-03-04 1987-09-09
JPS62147332U (ja) * 1987-03-12 1987-09-17
JPH01168030A (ja) * 1987-12-24 1989-07-03 Touyoko Kagaku Kk 減圧気相成長方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678893A (en) * 1970-05-01 1972-07-25 Stewart Warner Corp Improved device for supporting semiconductor wafers
FR2251370B1 (ja) * 1973-11-15 1978-12-01 Radiotechnique Compelec
JPS5670830A (en) * 1979-11-10 1981-06-13 Toshiba Corp Vapor growth method
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
DD206687A3 (de) * 1981-07-28 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor
JP2568185B2 (ja) * 1987-01-23 1996-12-25 株式会社日立製作所 熱処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108735A (ja) * 1981-12-23 1983-06-28 Fujitsu Ltd 縦型反応管用バスケツト
JPS59117138U (ja) * 1983-01-27 1984-08-07 日本電気ホームエレクトロニクス株式会社 半導体製造装置
JPS6252929U (ja) * 1985-09-21 1987-04-02
JPS62142839U (ja) * 1986-03-04 1987-09-09
JPS62147332U (ja) * 1987-03-12 1987-09-17
JPH01168030A (ja) * 1987-12-24 1989-07-03 Touyoko Kagaku Kk 減圧気相成長方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043478A1 (ja) * 2005-10-11 2007-04-19 Tokyo Electron Limited 基板処理装置及び基板処理方法
JP2014207435A (ja) * 2013-03-21 2014-10-30 東京エレクトロン株式会社 バッチ式縦型基板処理装置および基板保持具

Also Published As

Publication number Publication date
WO1991004572A1 (fr) 1991-04-04
KR950013428B1 (ko) 1995-11-08
EP0444205A4 (en) 1992-07-08
KR920702016A (ko) 1992-08-12
DE69024478T2 (de) 1996-07-04
EP0444205A1 (en) 1991-09-04
EP0444205B1 (en) 1995-12-27
JPH06818Y2 (ja) 1994-01-05
DE69024478D1 (de) 1996-02-08

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Legal Events

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EXPY Cancellation because of completion of term