JPH0359576B2 - - Google Patents

Info

Publication number
JPH0359576B2
JPH0359576B2 JP56151489A JP15148981A JPH0359576B2 JP H0359576 B2 JPH0359576 B2 JP H0359576B2 JP 56151489 A JP56151489 A JP 56151489A JP 15148981 A JP15148981 A JP 15148981A JP H0359576 B2 JPH0359576 B2 JP H0359576B2
Authority
JP
Japan
Prior art keywords
gaalas
compound semiconductor
etching
protective layer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56151489A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5853834A (ja
Inventor
Hiroko Asai
Masasue Okajima
Naoto Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56151489A priority Critical patent/JPS5853834A/ja
Publication of JPS5853834A publication Critical patent/JPS5853834A/ja
Publication of JPH0359576B2 publication Critical patent/JPH0359576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP56151489A 1981-09-25 1981-09-25 化合物半導体のエッチング方法 Granted JPS5853834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56151489A JPS5853834A (ja) 1981-09-25 1981-09-25 化合物半導体のエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151489A JPS5853834A (ja) 1981-09-25 1981-09-25 化合物半導体のエッチング方法

Publications (2)

Publication Number Publication Date
JPS5853834A JPS5853834A (ja) 1983-03-30
JPH0359576B2 true JPH0359576B2 (de) 1991-09-11

Family

ID=15519609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56151489A Granted JPS5853834A (ja) 1981-09-25 1981-09-25 化合物半導体のエッチング方法

Country Status (1)

Country Link
JP (1) JPS5853834A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184892A (ja) * 1985-02-12 1986-08-18 Nec Corp メサ型構造形成法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240958B2 (de) * 1972-06-26 1977-10-15
JPS5235067B2 (de) * 1973-06-04 1977-09-07
JPS562633A (en) * 1979-06-22 1981-01-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Etching method

Also Published As

Publication number Publication date
JPS5853834A (ja) 1983-03-30

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