JPS5853834A - 化合物半導体のエッチング方法 - Google Patents

化合物半導体のエッチング方法

Info

Publication number
JPS5853834A
JPS5853834A JP56151489A JP15148981A JPS5853834A JP S5853834 A JPS5853834 A JP S5853834A JP 56151489 A JP56151489 A JP 56151489A JP 15148981 A JP15148981 A JP 15148981A JP S5853834 A JPS5853834 A JP S5853834A
Authority
JP
Japan
Prior art keywords
layer
etching
compound semiconductor
gas
reactive ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56151489A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0359576B2 (de
Inventor
Hiroko Asai
浅井　博子
Masasue Okajima
岡島　正季
Naoto Mogi
茂木　直人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56151489A priority Critical patent/JPS5853834A/ja
Publication of JPS5853834A publication Critical patent/JPS5853834A/ja
Publication of JPH0359576B2 publication Critical patent/JPH0359576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP56151489A 1981-09-25 1981-09-25 化合物半導体のエッチング方法 Granted JPS5853834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56151489A JPS5853834A (ja) 1981-09-25 1981-09-25 化合物半導体のエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151489A JPS5853834A (ja) 1981-09-25 1981-09-25 化合物半導体のエッチング方法

Publications (2)

Publication Number Publication Date
JPS5853834A true JPS5853834A (ja) 1983-03-30
JPH0359576B2 JPH0359576B2 (de) 1991-09-11

Family

ID=15519609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56151489A Granted JPS5853834A (ja) 1981-09-25 1981-09-25 化合物半導体のエッチング方法

Country Status (1)

Country Link
JP (1) JPS5853834A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184892A (ja) * 1985-02-12 1986-08-18 Nec Corp メサ型構造形成法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924084A (de) * 1972-06-26 1974-03-04
JPS5010886A (de) * 1973-06-04 1975-02-04
JPS562633A (en) * 1979-06-22 1981-01-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Etching method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924084A (de) * 1972-06-26 1974-03-04
JPS5010886A (de) * 1973-06-04 1975-02-04
JPS562633A (en) * 1979-06-22 1981-01-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184892A (ja) * 1985-02-12 1986-08-18 Nec Corp メサ型構造形成法

Also Published As

Publication number Publication date
JPH0359576B2 (de) 1991-09-11

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