JPH0418700B2 - - Google Patents

Info

Publication number
JPH0418700B2
JPH0418700B2 JP57226514A JP22651482A JPH0418700B2 JP H0418700 B2 JPH0418700 B2 JP H0418700B2 JP 57226514 A JP57226514 A JP 57226514A JP 22651482 A JP22651482 A JP 22651482A JP H0418700 B2 JPH0418700 B2 JP H0418700B2
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
melting point
high melting
conductor layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57226514A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59119742A (ja
Inventor
Ryoichi Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57226514A priority Critical patent/JPS59119742A/ja
Publication of JPS59119742A publication Critical patent/JPS59119742A/ja
Publication of JPH0418700B2 publication Critical patent/JPH0418700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive
    • H10W20/492—Antifuses, i.e. interconnections changeable from non-conductive to conductive changeable by the use of an external beam, e.g. laser beam or ion beam

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57226514A 1982-12-25 1982-12-25 半導体装置の製造方法 Granted JPS59119742A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226514A JPS59119742A (ja) 1982-12-25 1982-12-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226514A JPS59119742A (ja) 1982-12-25 1982-12-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59119742A JPS59119742A (ja) 1984-07-11
JPH0418700B2 true JPH0418700B2 (mo) 1992-03-27

Family

ID=16846315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226514A Granted JPS59119742A (ja) 1982-12-25 1982-12-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59119742A (mo)

Also Published As

Publication number Publication date
JPS59119742A (ja) 1984-07-11

Similar Documents

Publication Publication Date Title
JP3095811B2 (ja) 電気的プログラム可能な非融解型素子、該素子を含む半導体デバイス、及び該素子の形成方法
US4853758A (en) Laser-blown links
US4617723A (en) Method and device for creating an activatable conducting link in a semiconductor device
US4960729A (en) Integrated circuits and a method for manufacture thereof
JP2965894B2 (ja) 集積回路の製造方法及び集積回路の製造に用いられる中間製品及びカスタム集積回路
US6335228B1 (en) Method for making an anti-fuse
EP0445317B1 (en) Semiconductor device with a fusible link and method of making a fusible link on a semiconductor substrate
JPH02153552A (ja) 半導体素子及びその製造方法
US7425472B2 (en) Semiconductor fuses and semiconductor devices containing the same
JPS59154038A (ja) 半導体装置
JPH0418700B2 (mo)
EP0272799A1 (en) Ablative etch resistant coating for laser personalization of integrated circuits
JPS60261154A (ja) 半導体集積回路装置の製造方法
JP3965827B2 (ja) 半導体装置およびその製造方法
JP2719751B2 (ja) 半導体集積回路装置の製造方法
KR100508889B1 (ko) 안티퓨즈를 생성하는 방법 및 인접한 도전영역의 선택적전기접속을 허용하기 위한 안티퓨즈
JPS5860560A (ja) 半導体装置の冗長回路およびそのフユ−ズ部切断方法
JPH0352254A (ja) Ｍｏｓ型半導体装置およびその製造方法
JPH0344062A (ja) 改善された可溶性リンクを有する集積回路
JPS6084838A (ja) 半導体装置の製造方法
JPS583252A (ja) 半導体集積回路装置
US20070190751A1 (en) Semiconductor fuses and methods for fabricating and programming the same
JPS6130060A (ja) 半導体ヒユ−ズ素子の製造方法
JPH07130861A (ja) 半導体集積回路装置の製造方法
JPH11274304A (ja) ダミー配線を有するメタルヒューズ素子