JPH0425228U - - Google Patents

Info

Publication number
JPH0425228U
JPH0425228U JP6777890U JP6777890U JPH0425228U JP H0425228 U JPH0425228 U JP H0425228U JP 6777890 U JP6777890 U JP 6777890U JP 6777890 U JP6777890 U JP 6777890U JP H0425228 U JPH0425228 U JP H0425228U
Authority
JP
Japan
Prior art keywords
group material
opening
source boat
material transport
transport gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6777890U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6777890U priority Critical patent/JPH0425228U/ja
Publication of JPH0425228U publication Critical patent/JPH0425228U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案による気相成長装置の一実施例
の概略断面図、第２図は本考案の気相成長装置を
使用して気相成長したＩｎＧａＡｓ層不純物濃度
の推移を示す図、第３図は従来法による気相成長
装置の概略断面図、第４図は従来の気相成長装置
を使用して気相成長したＩｎＧａＡｓ層不純物濃
度の推移を示す図である。 １１……成長炉、１２……族原料輸送ガス供
給管、１３……族原料、１４……族原料ソー
スボート、１５……Ｖ族ガス供給管、１６……基
板ホルダー、１７……基板、１８……反応管。 FIG. 1 is a schematic cross-sectional view of an embodiment of a vapor phase growth apparatus according to the present invention, and FIG. FIG. 3 is a schematic cross-sectional view of a conventional vapor phase growth apparatus, and FIG. 4 is a diagram showing the change in impurity concentration of an InGaAs layer grown in a vapor phase using the conventional vapor phase growth apparatus. 11...Growth furnace, 12...Group raw material transport gas supply pipe, 13...Group raw material, 14...Group raw material source boat, 15...V group gas supply pipe, 16...Substrate holder, 17...Substrate, 18...Reaction tube.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一方向のみに開口部を有する族原料ソースボ
ートを、開口部を族原料輸送ガス流上流方向に
向けて配置し、前記ソースボートの開口部より
族原料輸送ガス流下流方向になるに従つて孔径が
大きくなる複数個のガス吐出孔を有する族原料
輸送ガス供給管を挿入し、前記ガス吐出孔を族
原料の直上域に位置させて配置することを特徴と
する化合物半導体気相成長装置。 A group material source boat having an opening in only one direction is arranged with the opening facing upstream of the group material transport gas flow, and the pore diameter increases as the source boat becomes downstream of the group material transport gas flow from the opening of the source boat. 1. A compound semiconductor vapor phase growth apparatus characterized in that a group material transport gas supply pipe having a plurality of gas discharge holes with a large diameter is inserted, and the gas discharge holes are positioned directly above the group material.
JP6777890U 1990-06-25 1990-06-25 Pending JPH0425228U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6777890U JPH0425228U (en) 1990-06-25 1990-06-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6777890U JPH0425228U (en) 1990-06-25 1990-06-25

Publications (1)

Publication Number Publication Date
JPH0425228U true JPH0425228U (en) 1992-02-28

Family

ID=31601658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6777890U Pending JPH0425228U (en) 1990-06-25 1990-06-25

Country Status (1)

Country Link
JP (1) JPH0425228U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641840U (en) * 1992-11-09 1994-06-03 川崎重工業株式会社 Impact plate holder for impact type crusher

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641840U (en) * 1992-11-09 1994-06-03 川崎重工業株式会社 Impact plate holder for impact type crusher

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