JPH0455131U - - Google Patents
Info
- Publication number
- JPH0455131U JPH0455131U JP9682190U JP9682190U JPH0455131U JP H0455131 U JPH0455131 U JP H0455131U JP 9682190 U JP9682190 U JP 9682190U JP 9682190 U JP9682190 U JP 9682190U JP H0455131 U JPH0455131 U JP H0455131U
- Authority
- JP
- Japan
- Prior art keywords
- manifold
- taken out
- epitaxial growth
- growth apparatus
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図はこの考案の一実施例によるハイドライ
ドＶＰＥ装置の概略的な構成図、第２図は従来の
装置の概略的な構成図である。
図において、１は石英反応管、２は加熱用ヒー
ター、３はＩｎメルト、４はＧａメルト、５はＩ
ｎＰ基板結晶、６はＨＣｌガス導入口、７はＡｓ
Ｈ３，ＰＨ３ガス導入口、８はマニホールド、９
はゲートバルブ、１０は真空引装置である。なお
、図中、同一符号は同一、または相当部分を示す
。
FIG. 1 is a schematic diagram of a hydride VPE device according to an embodiment of the invention, and FIG. 2 is a schematic diagram of a conventional device. In the figure, 1 is a quartz reaction tube, 2 is a heating heater, 3 is an In melt, 4 is a Ga melt, and 5 is an I melt.
nP substrate crystal, 6 is HCl gas inlet, 7 is As
H3 , PH3 gas inlet, 8 is manifold, 9
1 is a gate valve, and 10 is a vacuum device. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
長に用いられるハイドライド気相成長装置におい
て、反応管の一端にゲートバルブによつて仕切ら
れたマニホールドを設けメルトの追加または交換
を行う場合にマニホールドを使つて、メルトの入
つたボートを出し入れする様にしたことを特徴と
する半導体結晶成長装置。 In a hydride vapor phase epitaxial growth apparatus used for epitaxial growth of InGaAsP quaternary compounds, a manifold partitioned off by a gate valve is installed at one end of the reaction tube, and the manifold is used to add or replace the melt. A semiconductor crystal growth apparatus characterized in that a loaded boat can be taken out and taken out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9682190U JPH0455131U (en) | 1990-09-13 | 1990-09-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9682190U JPH0455131U (en) | 1990-09-13 | 1990-09-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0455131U true JPH0455131U (en) | 1992-05-12 |
Family
ID=31836659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9682190U Pending JPH0455131U (en) | 1990-09-13 | 1990-09-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0455131U (en) |
-
1990
- 1990-09-13 JP JP9682190U patent/JPH0455131U/ja active Pending
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