JPH0428679B2 - - Google Patents

Info

Publication number
JPH0428679B2
JPH0428679B2 JP59115738A JP11573884A JPH0428679B2 JP H0428679 B2 JPH0428679 B2 JP H0428679B2 JP 59115738 A JP59115738 A JP 59115738A JP 11573884 A JP11573884 A JP 11573884A JP H0428679 B2 JPH0428679 B2 JP H0428679B2
Authority
JP
Japan
Prior art keywords
inp
crystal
concentration
single crystal
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59115738A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60260500A (ja
Inventor
Mikio Morioka
Atsushi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP59115738A priority Critical patent/JPS60260500A/ja
Publication of JPS60260500A publication Critical patent/JPS60260500A/ja
Publication of JPH0428679B2 publication Critical patent/JPH0428679B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59115738A 1984-06-05 1984-06-05 低転位密度のＩｎＰ単結晶とその製造方法 Granted JPS60260500A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59115738A JPS60260500A (ja) 1984-06-05 1984-06-05 低転位密度のＩｎＰ単結晶とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59115738A JPS60260500A (ja) 1984-06-05 1984-06-05 低転位密度のＩｎＰ単結晶とその製造方法

Publications (2)

Publication Number Publication Date
JPS60260500A JPS60260500A (ja) 1985-12-23
JPH0428679B2 true JPH0428679B2 (fr) 1992-05-14

Family

ID=14669849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59115738A Granted JPS60260500A (ja) 1984-06-05 1984-06-05 低転位密度のＩｎＰ単結晶とその製造方法

Country Status (1)

Country Link
JP (1) JPS60260500A (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176997A (ja) * 1984-02-23 1985-09-11 Sumitomo Electric Ind Ltd 低転位密度の３−５化合物半導体単結晶

Also Published As

Publication number Publication date
JPS60260500A (ja) 1985-12-23

Similar Documents

Publication Publication Date Title
US4303464A (en) Method of manufacturing gallium phosphide single crystals with low defect density
US20080203362A1 (en) Process for the manufacture of doped semiconductor single crystals, and iii-v semiconductor single crystal
US4528061A (en) Process for manufacturing boron-doped gallium arsenide single crystal
JPH0254320B2 (fr)
WO2021251349A1 (fr) Lingot de gaas, procédé de fabrication de lingot de gaas, et tranche de gaas
EP0149082B1 (fr) Arséniure de gallium et sa fabrication
JPS60176997A (ja) 低転位密度の３−５化合物半導体単結晶
US3630906A (en) Gallium arsenide
JPH0428679B2 (fr)
Šestáková et al. Doping of GaSb single crystals with various elements
JP3818023B2 (ja) ＧａＡｓ単結晶の製造方法
EP4592431A1 (fr) Procédé de production de lingot de gaas et lingot de gaas
US4853077A (en) Process for the preparation of mono-crystalline 3-5 semi-insulating materials by doping and use of the semi-insulating materials thus obtained
JPH0670973B2 (ja) 化合物半導体のエピタキシヤルウエハ
JP2736343B2 (ja) 半絶縁性ＩｎＰ単結晶の製造方法
JP3451658B2 (ja) 混晶半導体単結晶の成長方法
Matsumura et al. Low indium-doped LEC GaAs crystal growth employing thermal stress analysis
JPH0772120B2 (ja) Ｃｒドープ半絶縁性砒化ガリウム結晶の製造方法
JPH08756B2 (ja) 無機化合物単結晶の成長方法
JPH09255497A (ja) インジウムアンチモン単結晶の製造方法
JPH01215799A (ja) 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法
JPS5912640B2 (ja) 低転位密度りん化ガリウム単結晶の製造方法
JPS5935880B2 (ja) ＧａＳｂ単結晶の引上方法
JPS6389497A (ja) 珪素添加ガリウム砒素単結晶の製造方法
JPS60137900A (ja) 砒化ガリウム単結晶の製造方法