JPH0432545U - - Google Patents
Info
- Publication number
- JPH0432545U JPH0432545U JP7494690U JP7494690U JPH0432545U JP H0432545 U JPH0432545 U JP H0432545U JP 7494690 U JP7494690 U JP 7494690U JP 7494690 U JP7494690 U JP 7494690U JP H0432545 U JPH0432545 U JP H0432545U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- passivation
- semiconductor substrate
- guard ring
- reflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Description
第１図は本考案係るアバランシエフオトダイオ
ードの実施例を示す縦断面図、第２図は光照射時
おける受光内面の増倍率を示す説明図である。第
３図は従来のアバランシエフオトダイオードを示
す縦断面図、第４図は光照射時における受光面内
の増倍率を示す説明図である。
１……一導電型半導体基板、３……ガードリン
グ、４……パツシベーシヨン、５……窓孔、７…
…電極、８……受光面、１１……無反射膜。
FIG. 1 is a vertical cross-sectional view showing an embodiment of an avalanche photodiode according to the present invention, and FIG. 2 is an explanatory diagram showing the multiplication factor of the light-receiving inner surface during light irradiation. FIG. 3 is a vertical cross-sectional view showing a conventional avalanche photodiode, and FIG. 4 is an explanatory diagram showing the multiplication factor within the light receiving surface during light irradiation. DESCRIPTION OF SYMBOLS 1... One conductivity type semiconductor substrate, 3... Guard ring, 4... Passivation, 5... Window hole, 7...
... Electrode, 8 ... Light receiving surface, 11 ... Non-reflection film.
Claims (1)
板の表面に他導電型の不純物を選択的に拡散させ
て形成したガードリングと、一導電型半導体基板
の表面に形成され、上記ガードリングと対応する
部位に窓孔を開口させたパツシベーシヨンと、上
記パツシベーシヨン上および一導電型半導体基板
のガードリング上に形成され、パツシベーシヨン
の窓孔中央部を窓明けして受光面を形成した電極
と、上記受光面上に形成した無反射膜とを具備す
るものにおいて、 上記無反射膜は、径方向外周へいくにしたがつ
て厚みを増加させたことを特徴とするアバランシ
エフオドダイオード。[Claims for Utility Model Registration] A semiconductor substrate of one conductivity type, a guard ring formed by selectively diffusing impurities of another conductivity type on the surface of the semiconductor substrate of one conductivity type, and a guard ring formed on the surface of the semiconductor substrate of one conductivity type. A passivation is formed on the passivation and has a window hole opened in a portion corresponding to the guard ring, and a light receiving surface is formed on the passivation and on the guard ring of the one-conductivity type semiconductor substrate, and the central part of the window hole of the passivation is opened. and an anti-reflection film formed on the light-receiving surface, wherein the anti-reflection film has a thickness that increases toward the outer circumference in the radial direction. odd diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7494690U JPH0432545U (en) | 1990-07-13 | 1990-07-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7494690U JPH0432545U (en) | 1990-07-13 | 1990-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0432545U true JPH0432545U (en) | 1992-03-17 |
Family
ID=31615089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7494690U Pending JPH0432545U (en) | 1990-07-13 | 1990-07-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0432545U (en) |
-
1990
- 1990-07-13 JP JP7494690U patent/JPH0432545U/ja active Pending
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