JPH044750U - - Google Patents
Info
- Publication number
- JPH044750U JPH044750U JP4489690U JP4489690U JPH044750U JP H044750 U JPH044750 U JP H044750U JP 4489690 U JP4489690 U JP 4489690U JP 4489690 U JP4489690 U JP 4489690U JP H044750 U JPH044750 U JP H044750U
- Authority
- JP
- Japan
- Prior art keywords
- hole
- insulating film
- electrode
- semiconductor device
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000008188 pellet Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
Landscapes
- Wire Bonding (AREA)
Description
第１図は本考案の第１の具体例を示すＴＡＢ型
半導体装置の半導体ペレツトにおけるコーテイン
グ剤の被膜形成を示す断面図である。第２図は本
考案の第２の具体例を示すＴＡＢ型半導体装置の
半導体ペレツトにおけるコーテイング剤の被膜形
成を示す断面図である。第３図は本考案の第３の
具体例を示すＴＡＢ型半導体装置の中間構体の断
面図である。第４図は従来のＴＡＢ型半導体装置
の中間構体の要部断面図である。
２……インナーリード、３……透孔、４……半
導体ペレツト、５……バンプ電極、６……絶縁被
膜（コーテイング剤）。
FIG. 1 is a sectional view showing the formation of a film of a coating agent on a semiconductor pellet of a TAB type semiconductor device showing a first embodiment of the present invention. FIG. 2 is a sectional view showing the formation of a film of coating agent on a semiconductor pellet of a TAB type semiconductor device showing a second specific example of the present invention. FIG. 3 is a sectional view of an intermediate structure of a TAB type semiconductor device showing a third specific example of the present invention. FIG. 4 is a sectional view of a main part of an intermediate structure of a conventional TAB type semiconductor device. 2... Inner lead, 3... Through hole, 4... Semiconductor pellet, 5... Bump electrode, 6... Insulating coating (coating agent).
Claims (1)
ーンを透孔内に延在させて形成したインナリード
と、電極部分を除く表面を絶縁膜に被覆して半導
体ペレツトの電極とを圧着したことを特徴とする
ＴＡＢ型半導体装置。 An inner lead formed by laminating a conductive pattern laminated on an insulating film having a through hole and extending into the through hole, and an electrode of a semiconductor pellet whose surface except the electrode portion is covered with an insulating film are bonded together. TAB type semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4489690U JPH044750U (en) | 1990-04-25 | 1990-04-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4489690U JPH044750U (en) | 1990-04-25 | 1990-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH044750U true JPH044750U (en) | 1992-01-16 |
Family
ID=31558603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4489690U Pending JPH044750U (en) | 1990-04-25 | 1990-04-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH044750U (en) |
-
1990
- 1990-04-25 JP JP4489690U patent/JPH044750U/ja active Pending