JPH03101526U - - Google Patents
Info
- Publication number
- JPH03101526U JPH03101526U JP1990009226U JP922690U JPH03101526U JP H03101526 U JPH03101526 U JP H03101526U JP 1990009226 U JP1990009226 U JP 1990009226U JP 922690 U JP922690 U JP 922690U JP H03101526 U JPH03101526 U JP H03101526U
- Authority
- JP
- Japan
- Prior art keywords
- inner lead
- semiconductor device
- type semiconductor
- hole
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/701—Tape-automated bond [TAB] connectors
Landscapes
- Wire Bonding (AREA)
Description
第１Ａ図、および、第１Ｂ図は本考案の第一の
実施例を示す断面図であり第２Ａ図、および、第
２Ｂ図は本考案の第二の実施例を示す断面図であ
る。また、第３図、および、第４図は従来の技術
を示す断面図である。
１……インナーリード、２……絶縁フイルム、
３……透孔、５，５′……被膜、６……バンプ電
極、７……半導体ペレツト。
1A and 1B are sectional views showing a first embodiment of the present invention, and FIGS. 2A and 2B are sectional views showing a second embodiment of the present invention. Further, FIGS. 3 and 4 are cross-sectional views showing the conventional technology. 1... Inner lead, 2... Insulating film,
3...Through hole, 5,5'...Coating, 6...Bump electrode, 7...Semiconductor pellet.
Claims (1)
ンを延在させてインナーリードを形成し、上記透
孔内に配置した半導体ペレツトの電極とインナー
リードとを熱圧着したＴＡＢリード型半導体装置
において、上記インナーリードの少なくとも半導
体ペレツトのエツジ近傍と対向する部位に絶縁被
膜を形成したことを特徴とするＴＡＢリード型半
導体装置。 A TAB lead type semiconductor device in which an inner lead is formed by extending a conductive pattern into a through hole drilled in an insulating film, and an electrode of a semiconductor pellet placed in the through hole is bonded to the inner lead by thermocompression, A TAB lead type semiconductor device, characterized in that an insulating coating is formed on at least a portion of the inner lead facing the vicinity of the edge of the semiconductor pellet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990009226U JPH03101526U (en) | 1990-01-31 | 1990-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990009226U JPH03101526U (en) | 1990-01-31 | 1990-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03101526U true JPH03101526U (en) | 1991-10-23 |
Family
ID=31512830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990009226U Pending JPH03101526U (en) | 1990-01-31 | 1990-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03101526U (en) |
-
1990
- 1990-01-31 JP JP1990009226U patent/JPH03101526U/ja active Pending