JPH0449814Y2 - - Google Patents

Description

[Detailed Description of the Invention] (Industrial Application Field) The present invention mainly relates to a support device for supporting a silicon wafer on a pedestal in preparation for an ion implantation process.

(Prior Art) The applicant of the present application has previously developed an apparatus of this type for processing wafers subjected to ion implantation and other vacuum processing, as seen in Utility Application No. 79261/1983 (Utility Model Application No. 196526/1983). In the case of a type in which the pad is abutted against and supported on a pedestal having a cooling pipe or other cooling means through an intermediate pad, the pad is made of a laminate of aluminum or other metal foil, and the advantages of the pad are as follows. We have proposed a method that reduces the temperature rise of the wafer as much as possible due to its thermal conductivity.

(Problem to be solved by the invention) In this case, the pad and the pedestal are generally polymerized so that they can be separated from each other, and in such a case, there is some contact resistance between them. Therefore, there is a need to further improve this property.

(Means for Solving the Problems) The purpose of the present invention is to obtain an apparatus that meets such requirements. In the case of a type in which the pad is abutted against and supported on a pedestal having a means through an intermediate pad, the pad is composed of one sheet of aluminum or other metal foil or a plurality of laminated sheets, which are arranged in a plurality of sheets at appropriate intervals. It is attached to the pedestal side by brazing, gluing, or other means, and each intermediate portion thereof is raised upward in a substantially chevron shape.

(Example) An example of implementing the present invention will be explained with reference to attached drawings.

In the drawing, 1 indicates a silicon or other wafer, 2 indicates an ion beam acting on the wafer from the front side, and the wafer 1 has a cooling pipe or other cooling means 3 below the wafer.
It was made to abut and be supported on a pedestal 4 having an intermediate pad 5 via an intermediate pad 5.

In the drawings, 6 indicates a presser plate on the front side, and 7 indicates a spring on the back side. The pad 5 is made of one or a plurality of laminated aluminum or other metal foils 5a, and is not particularly different from the previously proposed pad in this respect.

According to the present invention, the pads 5 are bonded to the pedestal 4 side by brazing or other means at a plurality of appropriately spaced locations 5b, and each intermediate portion 5c thereof is raised upward in a substantially chevron shape.

Regarding the pad 5 shown in the figure, in detail, the pad 5 is made up of a plurality of laminated sheets of metal foil 5a, and the plurality of sheets are brazed at each location 5b using, for example, indium as a brazing material. The metal foils 5a are bonded to each other and also to the pedestal 4 side as a whole, and in each intermediate portion 5c, the metal foils 5a are separated from each other and raised upward in a substantially mountain shape as a whole. I made it so that

As shown in FIG. 1, the illustrated system consists of a turntable 8 as a whole, on which a plurality of pedestals 4 are provided in the circumferential direction, so that a plurality of wafers 1 can be It has been made possible to prepare for sequential processing. 9 in the figure is the table 8
Indicates the rotation axis at the center of

(Function) To explain its function, the front surface of the wafer 1 is irradiated with an ion beam 2 to perform ion implantation processing, and the heat generated at this time is conducted to the pedestal 4 via the pad 5 on the back surface. The wafer 1 is then cooled by the cooling means 3, and thus the wafer 1 is kept at a relatively low temperature. This point is not particularly different from the conventional one, but
During such operation, the pad 5 is made of metal foil 5a and is bonded to the pedestal 4 side at each location 5b. Good heat transfer is obtained through the wafer 1, and the cooling means 3 can achieve good cooling as a whole.Furthermore, the chevron-shaped protuberances of each intermediate portion 5c elastically hold the wafer 1 and create a space between the wafer 1 and the wafer 1. Good contact can be obtained.

(Effect of the invention) As described above, according to the invention, the pad is made of aluminum or other metal foil, which is bonded to the pedestal side at appropriate intervals by brazing or other means, and furthermore, each intermediate part thereof is The pad and the pedestal are raised in a substantially mountain shape, which improves thermal conductivity between the pad and the pedestal compared to the case where the pad and the pedestal only touch at the ends, and also creates a good bond between the pad and the wafer. It is possible to obtain good contact with the wafer as a whole, and it is possible to provide good cooling to the wafer as a whole, and its structure is simple and can be obtained at low cost.

[Brief explanation of the drawing]

Fig. 1 is a plan view of one example of the proposed device, Fig. 2 is a cross-sectional view taken along the line - Fig. 3 is an enlarged cut-away side view of its main parts, and Fig. 4 is a plan view of its pad portion. . 1... Wafer, 3... Cooling means, 4... Pedestal,
5...pad, 5a...metal foil, 5b...each part, 5c...each intermediate part.

Claims (1)

[Scope of utility model registration request] The wafer to be subjected to ion implantation or other vacuum processing is placed on a pedestal equipped with cooling tubes or other cooling means.
In the case of a type in which the pads are supported by abutment through an intermediate pad, the pad is composed of one sheet of aluminum or other metal foil, or a plurality of sheets laminated together, and these are brazed or bonded at multiple locations at appropriate intervals. A wafer support device, which is attached to the pedestal side by other means, and each intermediate portion thereof is raised upward in a substantially chevron shape.