JPH04502984A - 低減されかつ安定化された表面導電性を有する誘電性基体、その製造方法及びその基体の用途 - Google Patents

低減されかつ安定化された表面導電性を有する誘電性基体、その製造方法及びその基体の用途

Info

Publication number
JPH04502984A
JPH04502984A JP2505892A JP50589290A JPH04502984A JP H04502984 A JPH04502984 A JP H04502984A JP 2505892 A JP2505892 A JP 2505892A JP 50589290 A JP50589290 A JP 50589290A JP H04502984 A JPH04502984 A JP H04502984A
Authority
JP
Japan
Prior art keywords
substrate
chlorotrimethylsilane
dielectric
solvent
dielectric substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2505892A
Other languages
English (en)
Japanese (ja)
Inventor
ザラコグル，イブラヒム，アドナン
Original Assignee
アー・ファウ・エル　ゲゼルシャフト　フィア　フェアブレヌングスクラフトマシーネン　ウント　メステヒニク　エム・ベー・ハー　プロフェッサー・ドクター・ドクター・ハー・ツェー・ハンス・リスト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アー・ファウ・エル　ゲゼルシャフト　フィア　フェアブレヌングスクラフトマシーネン　ウント　メステヒニク　エム・ベー・ハー　プロフェッサー・ドクター・ドクター・ハー・ツェー・ハンス・リスト filed Critical アー・ファウ・エル　ゲゼルシャフト　フィア　フェアブレヌングスクラフトマシーネン　ウント　メステヒニク　エム・ベー・ハー　プロフェッサー・ドクター・ドクター・ハー・ツェー・ハンス・リスト
Publication of JPH04502984A publication Critical patent/JPH04502984A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
JP2505892A 1989-04-10 1990-04-09 低減されかつ安定化された表面導電性を有する誘電性基体、その製造方法及びその基体の用途 Pending JPH04502984A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT0084189A AT391859B (de) 1989-04-10 1989-04-10 Verfahren zur erniedrigung und stabilisierung der elektrischen leitfaehigkeit
AT841/89 1989-04-10

Publications (1)

Publication Number Publication Date
JPH04502984A true JPH04502984A (ja) 1992-05-28

Family

ID=3501007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2505892A Pending JPH04502984A (ja) 1989-04-10 1990-04-09 低減されかつ安定化された表面導電性を有する誘電性基体、その製造方法及びその基体の用途

Country Status (4)

Country Link
EP (1) EP0418360A1 (de)
JP (1) JPH04502984A (de)
AT (1) AT391859B (de)
WO (1) WO1990012420A1 (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120031A (ja) * 1985-11-14 1987-06-01 ワツカ−・ケミトロニク・ゲゼルシヤフト・フユア・エレクトロニク・グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング 研磨したケイ素表面の保護方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1347948A (fr) * 1961-12-15 1964-01-04 Pacific Semiconductors Procédé d'estérification du bioxyde de silicium à la pression atmosphérique
US3482977A (en) * 1966-02-11 1969-12-09 Sylvania Electric Prod Method of forming adherent masks on oxide coated semiconductor bodies
FR1563858A (de) * 1968-02-02 1969-04-18
JPS5336997B2 (de) * 1973-10-12 1978-10-05
US4263350A (en) * 1979-12-31 1981-04-21 Ppg Industries, Inc. Silane release surfaces on glass
US4274856A (en) * 1979-12-31 1981-06-23 Ppg Industries, Inc. Method for developing a release surface on a glass mold
EP0082079B1 (de) * 1981-12-14 1986-04-16 The Dow Chemical Company Verfahren zur Ätzung und Desaktivierung von Glaskapillaren für die Chromatographie

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120031A (ja) * 1985-11-14 1987-06-01 ワツカ−・ケミトロニク・ゲゼルシヤフト・フユア・エレクトロニク・グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング 研磨したケイ素表面の保護方法

Also Published As

Publication number Publication date
AT391859B (de) 1990-12-10
WO1990012420A1 (de) 1990-10-18
EP0418360A1 (de) 1991-03-27
ATA84189A (de) 1990-06-15

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