JPH045658U - - Google Patents

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Publication number
JPH045658U
JPH045658U JP4518090U JP4518090U JPH045658U JP H045658 U JPH045658 U JP H045658U JP 4518090 U JP4518090 U JP 4518090U JP 4518090 U JP4518090 U JP 4518090U JP H045658 U JPH045658 U JP H045658U
Authority
JP
Japan
Prior art keywords
diffusion
potential
island
semiconductor device
isolator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4518090U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4518090U priority Critical patent/JPH045658U/ja
Publication of JPH045658U publication Critical patent/JPH045658U/ja
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の半導体装置の実施例の構成を
示す断面図、第2図は従来の技術の半導体装置の
説明に供される図である。 A,B……拡散抵抗、2……Al層、4……S
iO、6a,6b……P層、8a,8b……
層(拡散島)、30a,30b……N層、
12……P−Si基板、14……アイソレータ。
FIG. 1 is a sectional view showing the configuration of an embodiment of the semiconductor device of the present invention, and FIG. 2 is a diagram used to explain a conventional semiconductor device. A, B...Diffused resistance, 2...Al layer, 4...S
iO 2 , 6a, 6b...P - layer, 8a, 8b...
N layer (diffusion island), 30a, 30b...N + layer,
12... P-Si substrate, 14... Isolator.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 複数の抵抗を互いにアイソレータで分離して複
数の拡散島が形成され、かつ前記拡散島の電位と
前記拡散島内に形成された抵抗の高電側とを同電
位に形成してなる構成の半導体装置。
A semiconductor device having a structure in which a plurality of diffusion islands are formed by separating a plurality of resistors from each other by an isolator, and the potential of the diffusion island and the high-voltage side of the resistor formed in the diffusion island are formed at the same potential. .
JP4518090U 1990-04-28 1990-04-28 Pending JPH045658U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4518090U JPH045658U (en) 1990-04-28 1990-04-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4518090U JPH045658U (en) 1990-04-28 1990-04-28

Publications (1)

Publication Number Publication Date
JPH045658U true JPH045658U (en) 1992-01-20

Family

ID=31559131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4518090U Pending JPH045658U (en) 1990-04-28 1990-04-28

Country Status (1)

Country Link
JP (1) JPH045658U (en)

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