JPH0459049U - - Google Patents
Info
- Publication number
- JPH0459049U JPH0459049U JP10273090U JP10273090U JPH0459049U JP H0459049 U JPH0459049 U JP H0459049U JP 10273090 U JP10273090 U JP 10273090U JP 10273090 U JP10273090 U JP 10273090U JP H0459049 U JPH0459049 U JP H0459049U
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- focused ion
- substrate
- shielding plate
- fine slits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の集束イオンビーム装置の一例
を示す構成図、第２図ａ，ｂは微細スリツトを形
成した遮蔽板の斜視図、第３図は微細スリツトを
作成する工程図、第４図は従来の集束イオンビー
ム装置の構成図である。
１０……基板、１１……液体金属イオン源、１
２……引出し電極、１３ａ，１３ｂ……静電型レ
ンズ、１６……減速電極、１７……サンプルステ
ージ、２１……遮蔽版、２１ａ……微細スリツト
、２１ｂ……パターンを有する微細スリツト。
Fig. 1 is a configuration diagram showing an example of a focused ion beam device of the present invention, Figs. 2 a and b are perspective views of a shielding plate on which fine slits are formed, Fig. 3 is a process diagram for creating the fine slits, and Fig. 4 The figure is a configuration diagram of a conventional focused ion beam device. 10...Substrate, 11...Liquid metal ion source, 1
2... Extraction electrode, 13a, 13b... Electrostatic lens, 16... Deceleration electrode, 17... Sample stage, 21... Shielding plate, 21a... Fine slit, 21b... Fine slit having a pattern.
Claims (1)
て集束イオンビームを形成し、この集束イオンビ
ームを被加工対象としての基板表面に照射する集
束イオンビーム装置において、 集束イオンビームを所定のエネルギーに減速す
る減速手段を備え、かつ、前記基板の直前に、微
細スリツトを形成した遮蔽板を配し、この遮蔽板
の微細スリツトを通して減速ビームを基板に照射
するようにしたことを特徴とする集束イオンビー
ム装置。[Claim for Utility Model Registration] In a focused ion beam device that focuses an ion beam emitted from an ion source to form a focused ion beam, and irradiates this focused ion beam onto the surface of a substrate to be processed, A deceleration means is provided to decelerate the beam to a predetermined energy level, and a shielding plate with fine slits is disposed immediately in front of the substrate, and the decelerated beam is irradiated onto the substrate through the fine slits of the shielding plate. A focused ion beam device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10273090U JPH0459049U (en) | 1990-09-28 | 1990-09-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10273090U JPH0459049U (en) | 1990-09-28 | 1990-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0459049U true JPH0459049U (en) | 1992-05-20 |
Family
ID=31847228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10273090U Pending JPH0459049U (en) | 1990-09-28 | 1990-09-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0459049U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005197735A (en) * | 2004-01-06 | 2005-07-21 | Internatl Business Mach Corp <Ibm> | Backside layer peeling of mosfet device for electric and physical characterization |
-
1990
- 1990-09-28 JP JP10273090U patent/JPH0459049U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005197735A (en) * | 2004-01-06 | 2005-07-21 | Internatl Business Mach Corp <Ibm> | Backside layer peeling of mosfet device for electric and physical characterization |
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