JPH0487631U - - Google Patents

Info

Publication number
JPH0487631U
JPH0487631U JP13078190U JP13078190U JPH0487631U JP H0487631 U JPH0487631 U JP H0487631U JP 13078190 U JP13078190 U JP 13078190U JP 13078190 U JP13078190 U JP 13078190U JP H0487631 U JPH0487631 U JP H0487631U
Authority
JP
Japan
Prior art keywords
semiconductor wafer
furnace
core tube
furnace core
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13078190U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13078190U priority Critical patent/JPH0487631U/ja
Publication of JPH0487631U publication Critical patent/JPH0487631U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
第１図、第２図は、本考案に係る半導体装置の
実施例を示すもので、第１図は第１実施例の要部
を示す図、第２図は第２実施例の要部を示す図、
第３図は従来の半導体装置の要部を示す図である
。 １，１１……炉、２，１２，１２′……炉心管
、３，１３……ボート、４，１４……半導体ウエ
ハー、１６ａ，１６ａ′……不活性ガス流入用の
管。

Claims (1)

    【実用新案登録請求の範囲】
  1. 両端が開口した横長形状の炉内に、半導体ウエ
    ハーを内部に配置した炉心管が設けられ、該炉心
    管の該半導体フエハー取り出し位置付近にガス流
    入用の管が形成されてなる構成の半導体装置。
JP13078190U 1990-11-30 1990-11-30 Pending JPH0487631U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13078190U JPH0487631U (ja) 1990-11-30 1990-11-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13078190U JPH0487631U (ja) 1990-11-30 1990-11-30

Publications (1)

Publication Number Publication Date
JPH0487631U true JPH0487631U (ja) 1992-07-30

Family

ID=31878096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13078190U Pending JPH0487631U (ja) 1990-11-30 1990-11-30

Country Status (1)

Country Link
JP (1) JPH0487631U (ja)

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