JPH0511654B2 - - Google Patents

Info

Publication number
JPH0511654B2
JPH0511654B2 JP62214238A JP21423887A JPH0511654B2 JP H0511654 B2 JPH0511654 B2 JP H0511654B2 JP 62214238 A JP62214238 A JP 62214238A JP 21423887 A JP21423887 A JP 21423887A JP H0511654 B2 JPH0511654 B2 JP H0511654B2
Authority
JP
Japan
Prior art keywords
resist pattern
predetermined shape
ultraviolet rays
silicon compound
deep ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62214238A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6457618A (en
Inventor
Koji Yamanaka
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62214238A priority Critical patent/JPS6457618A/ja
Publication of JPS6457618A publication Critical patent/JPS6457618A/ja
Publication of JPH0511654B2 publication Critical patent/JPH0511654B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP62214238A 1987-08-27 1987-08-27 Pattern forming method Granted JPS6457618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62214238A JPS6457618A (en) 1987-08-27 1987-08-27 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62214238A JPS6457618A (en) 1987-08-27 1987-08-27 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS6457618A JPS6457618A (en) 1989-03-03
JPH0511654B2 true JPH0511654B2 (mo) 1993-02-16

Family

ID=16652471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62214238A Granted JPS6457618A (en) 1987-08-27 1987-08-27 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS6457618A (mo)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4675450B2 (ja) * 2000-04-13 2011-04-20 富士通株式会社 薄膜パターンの形成方法

Also Published As

Publication number Publication date
JPS6457618A (en) 1989-03-03

Similar Documents

Publication Publication Date Title
JPH05241348A (ja) パタン形成方法
JPH0519973B2 (mo)
JPH0511654B2 (mo)
JP2902513B2 (ja) レジストパターン形成方法
JPS60161621A (ja) 半導体装置の製造方法
JPH02181910A (ja) レジストパターン形成方法
JPH0240914A (ja) パターン形成方法
JPS6137774B2 (mo)
JPH01137634A (ja) 半導体装置の製造方法
JP2506637B2 (ja) パタ−ン形成方法
JPH06216062A (ja) 半導体装置の製造方法
JPH02271359A (ja) シリル化によるポジ型ホトレジストの硬化方法
JP3441439B2 (ja) 微細レジストパターン形成方法および半導体装置の製造方法
JPH02156244A (ja) パターン形成方法
JPS59155933A (ja) 微細パタ−ン形成方法
JPH0385544A (ja) レジストパターン形成方法
JPH0638408B2 (ja) 半導体装置の製造方法
KR100380274B1 (ko) 디유브이 공정을 이용한 실리콘 산화막 식각방법
KR100215899B1 (ko) 반도체 소자의 콘택 형성방법
JP2024121492A (ja) 半導体装置の製造方法
JPH04320322A (ja) レジストパターンの作製方法
JPS632046A (ja) パタ−ン形成方法
JPH0229657A (ja) 半導体装置の製造方法
JPH0252357A (ja) パターン形成方法
JP2000182940A (ja) レジストパターン形成方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees