JPH0518177B2 - - Google Patents

Info

Publication number: JPH0518177B2
Authority: JP; Japan
Prior art keywords: discharge; film; present; gas; plasma
Prior art date: 1984-05-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP9340984A

Other languages

English (en)

Japanese (ja)

Other versions

JPS60238304A (ja

Inventor

Koichi Shinohara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electric Industrial Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-05-10

Filing date

1984-05-10

Publication date

1993-03-11

1984-05-10 Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd

1984-05-10 Priority to JP59093409A priority Critical patent/JPS60238304A/ja

1985-11-27 Publication of JPS60238304A publication Critical patent/JPS60238304A/ja

1993-03-11 Publication of JPH0518177B2 publication Critical patent/JPH0518177B2/ja

Status Granted legal-status Critical Current

Links

239000010408 film Substances 0.000 claims description 18
239000000178 monomer Substances 0.000 claims description 9
238000000034 method Methods 0.000 claims description 6
239000000758 substrate Substances 0.000 claims description 5
239000010409 thin film Substances 0.000 claims description 5
239000007789 gas Substances 0.000 description 10
238000006116 polymerization reaction Methods 0.000 description 10
230000015572 biosynthetic process Effects 0.000 description 8
238000006243 chemical reaction Methods 0.000 description 6
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
238000007796 conventional method Methods 0.000 description 4
229920006254 polymer film Polymers 0.000 description 4
238000000354 decomposition reaction Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
239000000470 constituent Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000007788 liquid Substances 0.000 description 1
230000005415 magnetization Effects 0.000 description 1
239000012528 membrane Substances 0.000 description 1
150000002894 organic compounds Chemical class 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
229920000307 polymer substrate Polymers 0.000 description 1
230000002250 progressing effect Effects 0.000 description 1
UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
238000004804 winding Methods 0.000 description 1

Landscapes

Manufacturing Of Magnetic Record Carriers (AREA)
Polymerisation Methods In General (AREA)
Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Physical Vapour Deposition (AREA)

JP59093409A 1984-05-10 1984-05-10 薄膜形成方法 Granted JPS60238304A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP59093409A JPS60238304A (ja)	1984-05-10	1984-05-10	薄膜形成方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59093409A JPS60238304A (ja)	1984-05-10	1984-05-10	薄膜形成方法

Publications (2)

Publication Number	Publication Date
JPS60238304A JPS60238304A (ja)	1985-11-27
JPH0518177B2 true JPH0518177B2 (da)	1993-03-11

Family

ID=14081495

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59093409A Granted JPS60238304A (ja)	1984-05-10	1984-05-10	薄膜形成方法

Country Status (1)

Country	Link
JP (1)	JPS60238304A (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS62100416A (ja) *	1985-10-24	1987-05-09	Sumitomo Metal Mining Co Ltd	三塩化砒素の蒸留精製方法
JPH0647463B2 (ja) *	1985-10-24	1994-06-22	住友金属鉱山株式会社	酸化砒素よりの三塩化砒素の製造方法
GB0207350D0 (en) *	2002-03-28	2002-05-08	Univ Sheffield	Surface
GB0313569D0 (en) *	2003-06-12	2003-07-16	Plasso Technology Ltd	Method
US20070065596A1 (en) *	2003-11-20	2007-03-22	Pavel Koulik	Plasma thin-film deposition method

1984
- 1984-05-10 JP JP59093409A patent/JPS60238304A/ja active Granted

Also Published As

Publication number	Publication date
JPS60238304A (ja)	1985-11-27

Similar Documents

Publication	Publication Date	Title
US3068510A (en)	1962-12-18	Polymerizing method and apparatus
EP0605534B1 (en)	1997-01-29	Apparatus for rapid plasma treatments and method
US4032440A (en)	1977-06-28	Semipermeable membrane
US4713288A (en)	1987-12-15	Magnetic recording medium
JPS5857082B2 (ja)	1983-12-19	液晶装置の製造方法
US4038439A (en)	1977-07-26	Method for producing selected alignment in liquid crystal
JPS60137417A (ja)	1985-07-22	気体分離部材およびその製造方法
JPH0518177B2 (da)	1993-03-11
JPS61153122A (ja)	1986-07-11	酸素分離部材およびその製造方法
JPS5826603B2 (ja)	1983-06-03	透明導電膜のプラズマエツチング方法
US4618507A (en)	1986-10-21	Method of making a capacitor winding
JP3134001B2 (ja)	2001-02-13	フッ素フイルムの表面改質方法
JP3008666B2 (ja)	2000-02-14	金属薄膜型磁気記録媒体の製造方法
KR20160141211A (ko)	2016-12-08	진공증착된 가스베리어 필름 제조장치
JPS5853836A (ja)	1983-03-30	有機樹脂材料の付着性を増すための方法
JPS6055605A (ja)	1985-03-30	薄膜形成装置
JPS61924A (ja)	1986-01-06	磁気記録媒体の製法
JPS63206471A (ja)	1988-08-25	炭素皮膜形成方法および装置
JPH06120176A (ja)	1994-04-28	エッチング方法と装置
JP2906475B2 (ja)	1999-06-21	アルコールガス検出素子
JPS60248703A (ja)	1985-12-09	プラズマｃｖｄ装置
JPS61227231A (ja)	1986-10-09	磁気記録体の製造方法
JPS63266063A (ja)	1988-11-02	Ｉｔｏ膜作成方法
JPH04103637A (ja)	1992-04-06	有機高分子配向膜の製造方法
JP2524179B2 (ja)	1996-08-14	スパッタ成膜法