JPH0520323U - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPH0520323U JPH0520323U JP066644U JP6664491U JPH0520323U JP H0520323 U JPH0520323 U JP H0520323U JP 066644 U JP066644 U JP 066644U JP 6664491 U JP6664491 U JP 6664491U JP H0520323 U JPH0520323 U JP H0520323U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- liquid nitrogen
- exhaust pipe
- nitrogen trap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 239000000428 dust Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 abstract description 11
- 239000007795 chemical reaction product Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000002808 molecular sieve Substances 0.000 description 3
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S55/00—Gas separation
- Y10S55/46—Spray booths
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】
【目的】気相成長装置において、反応生成物及び未反応
ガスによるロータリポンプや反応圧力コントロールバル
ブへの影響を排除し、安定した排気能力を保ち、かつメ
ンテ性の向上を計る。 【構成】気相成長装置の排気配管１０にロータリーポン
プ７，圧力調整バルブ６とともにダストフィルタ３と液
体窒素トラップ４を直列に設ける。
ガスによるロータリポンプや反応圧力コントロールバル
ブへの影響を排除し、安定した排気能力を保ち、かつメ
ンテ性の向上を計る。 【構成】気相成長装置の排気配管１０にロータリーポン
プ７，圧力調整バルブ６とともにダストフィルタ３と液
体窒素トラップ４を直列に設ける。
Description
【０００１】
本考案は半導体装置の製造工程で用いられる気相成長装置に関し、特に排気配 管に関する。
【０００２】
従来の気相成長装置は、ＡｓＨ3 （アルシン），ＰＨ3 （フォスフィン）Ｓｉ Ｈ4 （シラン），Ｈ2 （水素）等の反応ガスを反応炉へ供給し、誘導加熱や抵抗 加熱等により、半導体ウェハー（以下単にウェハーという）を加熱し、導入ガス を熱分解させ、ウェハー上に所定の組成の薄膜を成長させるものである。ウェハ ー上に成長しなかった生成物や未反応ガスは、反応炉より排気配管を通り排気さ れる。
【０００３】 この生成物を排気配管中でトラップするため、金属メッシュやテフロンフィル タ等で作られたダストフィルタが取り付けられている。
【０００４】
この従来の気相成長装置の排気配管では、微小粒反応生成物や未反応ガスが充 分トラップできないため、これら生成物等が排気配管後段にあるロータリーポン プ中に入り込んで、排気能力を低下させたり、砒素やリンが入り込んで、メンテ ナンス性や安全性にも問題が生じていた。ロータリポンプのオイル中にリン分が 入り、オイルが大気にふれると燃えてしまうという事例もあった。さらに、排気 配管後段にある圧力調整バルブの内部に反応生成物が付着した場合、圧力調整に おけるバルブ開閉度にも変化が生じ、圧力精度が悪くなるという欠点があった。 また微小粒反応生成物をトラップするためダストフィルタ内のメッシュを小さく （５０μｍ以下）すると、排気能力が落ちてしまうという問題もあった。
【０００５】
【課題を解決するための手段】 本考案の気相成長装置は、反応生成物や未反応ガスを効率よくトラップするた めに、排気配管に液体窒素トラップとダストフィルタとを直列に設置している。
【０００６】 この液体窒素トラップは内部にモレキュラシーブが入っており液体窒素（沸点 −１９５．８℃）にて冷却することで、未反応ＰＨ3 （沸点−８７．７℃，融点 −１３３℃）やＡｓＨ3 （沸点−５４．８℃，融点−１１３．５℃）をトラップ することができる。
【０００７】
次に本考案について図面を参照して説明する。図１は本考案の第１の実施例の 構成図である。
【０００８】 反応炉１に導入された反応ガスが反応炉１内で熱分解され、ウェハー２上に薄 膜が成長する。そして、ウェハー２上に成長しなかった反応生成物は、反応炉１ 内部に付着するものを除けば排気配管１０中に流れ出す。その反応生成物はダス トフィルタ３にて大部分がトラップされる。しかし微小粒子のものはダストフィ ルタ３内の金属メッシュ等（メッシュ５０〜１００μｍ）を通ってしまう。そこ で液体窒素トラップ４の内部モレキュラシーブにて吸着させる。
【０００９】 さらに反応炉１の内部で反応しなかった反応ガスは、そのままの状態で排気配 管１０に流れ出す。この未反応ガスは、ダストフィルタ３ではトラップされず、 液体窒素トラップ４がソープションポンプと同じ働きを行ない吸着する。
【００１０】 このため、圧力調整バルブ６やロータリーポンプ７に未反応ガスが流れ込んだ り、反応生成物の付着による影響がなくなるため、安定した排気が行なわれる。
【００１１】 この時、液体窒素トラップ４は常に冷却されるように補助タンク５を設け、常 に液体窒素を補給するようにしておく。実際ＡｓＨ3 やＰＨ3 を流して薄膜を成 長後、メンテ時におけるダストフィルタと液体窒素トラップを観察してみると、 ダストフィルタ３には粉末状の黒・茶色のダストが多く、また液体窒素トラップ ４の内部モレキュラシーブは、大気中でその表面が炎を出して燃える。これはリ ン分が多くトラップされていると考えられる。また、ロータリポンプ中のオイル 中に含まれるリン及び砒素について分析したところ、両方ともほとんど含まれて いないという結果が得られた。
【００１２】 図２は本考案の第２の実施例の構成図であり、液体窒素トラップ４Ａに高圧エ アーラインを設けたものである。
【００１３】 液体窒素トラップ４Ａに高圧エアーラインを設けることにより、反応炉１内部 で分解されなかった未反応ガス及び微小粒子生成物がトラップされた、液体窒素 トラップ４Ａのメンテ作業性の向上を計ることができる。
【００１４】 すなわち、第２の実施例においては、集中的に液体窒素トラップ４Ａに生成物 及び未反応のガスがトラップされる。そこでより効率的，安全なメンテ作業とし て、液体窒素トラップ４Ａにトラップされたものを、液体窒素トラップ４Ａの両 側に設けたストップバルブ１１により他の系と分け、そしてエアーバルブ１２に より液体窒素トラップ４Ａ内に高圧エアーを導入することで、空気との混合を閉 じた系の中で空気とトラップされた物質との反応を行なってしまう。特にリンが トラップされた場合水分や酸素と激しく反応し、燃焼するので有効となる。
【００１５】
以上説明したように本考案は、気相成長装置の排気配管にダストフィルタと液 体窒素トラップを設けることにより、反応生成物や未反応ガスが効率よくトラッ プでき、排気能力が数Ｔｏｒｒから０．１Ｔｏｒｒ程度まで向上させることがで きた。さらに成長圧力も±５Ｔｏｒｒから±２Ｔｏｒｒまで向上した。また、従 来排気系メンテに３〜４日間要していたものを１〜２日間に短縮させることが可 能となった。
【図１】本考案の第１の実施例の構成図。
【図２】本考案の第２の実施例の構成図。
【符号の説明】 １ 反応炉 ２ ウェハー ３ ダストフィルタ ４，４Ａ 液体窒素トラップ ５ 補助タンク ６ 圧力調整バルブ ７ ロータリーポンプ １０ 排気配管 １１ ストップバルブ １２ エアーバルブ
Claims (2)
- 【請求項１】 反応炉とこの反応炉に接続された排気配
管とを有する気相成長装置において、前記排気配管にダ
ストフィルタと液体窒素トラップとを直列に設けたこと
を特徴とする気相成長装置。 - 【請求項２】 液体窒素トラップには高圧エアーライン
が接続されている請求項１記載の気相成長装置。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991066644U JP2580928Y2 (ja) | 1991-08-22 | 1991-08-22 | 気相成長装置 |
| US07/922,687 US5250092A (en) | 1991-08-22 | 1992-07-30 | Exhaust apparatus for epitaxial growth system |
| EP92307682A EP0529982B1 (en) | 1991-08-22 | 1992-08-21 | Exhaust apparatus for epitaxial growth system. |
| DE69205648T DE69205648T2 (de) | 1991-08-22 | 1992-08-21 | Abgasvorrichtung für Epitaxie-Anlage. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991066644U JP2580928Y2 (ja) | 1991-08-22 | 1991-08-22 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0520323U true JPH0520323U (ja) | 1993-03-12 |
| JP2580928Y2 JP2580928Y2 (ja) | 1998-09-17 |
Family
ID=13321813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1991066644U Expired - Fee Related JP2580928Y2 (ja) | 1991-08-22 | 1991-08-22 | 気相成長装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5250092A (ja) |
| EP (1) | EP0529982B1 (ja) |
| JP (1) | JP2580928Y2 (ja) |
| DE (1) | DE69205648T2 (ja) |
Cited By (1)
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|---|---|---|---|---|
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| US5556473A (en) * | 1995-10-27 | 1996-09-17 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including dry vacuum pump system and downstream cold trap |
| US5772771A (en) * | 1995-12-13 | 1998-06-30 | Applied Materials, Inc. | Deposition chamber for improved deposition thickness uniformity |
| US5782942A (en) * | 1996-01-11 | 1998-07-21 | Vanguard International Semiconductor Corporation | Filter system for semiconductor furnace |
| US5851293A (en) * | 1996-03-29 | 1998-12-22 | Atmi Ecosys Corporation | Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations |
| US5769628A (en) * | 1996-05-03 | 1998-06-23 | Vanguard International Semiconductor Corporation | Furnace exhaust system with regulator |
| US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
| US6332925B1 (en) * | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
| US6015463A (en) * | 1997-02-14 | 2000-01-18 | Advanced Micro Devices, Inc. | Method and system for trapping contaminants formed during chemical vapor deposition processing of semiconductor wafers |
| US5806319A (en) * | 1997-03-13 | 1998-09-15 | Wary; John | Method and apparatus for cryogenically cooling a deposition chamber |
| US5841005A (en) * | 1997-03-14 | 1998-11-24 | Dolbier, Jr.; William R. | Parylene AF4 synthesis |
| US6051276A (en) * | 1997-03-14 | 2000-04-18 | Alpha Metals, Inc. | Internally heated pyrolysis zone |
| US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
| JP2001060578A (ja) * | 1999-08-20 | 2001-03-06 | Nec Corp | 真空処理装置 |
| US6458212B1 (en) | 2000-03-13 | 2002-10-01 | Advanced Micro Devices, Inc. | Mesh filter design for LPCVD TEOS exhaust system |
| DE10243022A1 (de) * | 2002-09-17 | 2004-03-25 | Degussa Ag | Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US3309844A (en) * | 1963-11-29 | 1967-03-21 | Union Carbide Corp | Process for adsorbing gases |
| US4488506A (en) * | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
| JPS58161775A (ja) * | 1982-03-19 | 1983-09-26 | Anelva Corp | 放電装置 |
| JPS58182817A (ja) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | 低圧ｃｖｄ装置 |
| JPS6013071A (ja) * | 1983-07-01 | 1985-01-23 | Canon Inc | 気相法装置の排気系 |
| JPS60114570A (ja) * | 1983-11-25 | 1985-06-21 | Canon Inc | プラズマｃｖｄ装置の排気系 |
| JPS60198394A (ja) * | 1984-03-21 | 1985-10-07 | Anelva Corp | 真空処理装置の排気装置 |
| JPH0699230B2 (ja) * | 1985-03-26 | 1994-12-07 | 株式会社東芝 | 有機金属熱分解法気相成長装置 |
| CH663549A5 (en) * | 1985-07-15 | 1987-12-31 | Antoine Dubas | Eliminating toxic gases from semiconductor mfr. - by thermally decomposing them at low pressure and recovering non-gaseous residues |
| JPH078758B2 (ja) * | 1987-05-28 | 1995-02-01 | 古河電気工業株式会社 | 気相エピタキシャル成長装置の排気方法 |
| JPH01139125A (ja) * | 1987-08-24 | 1989-05-31 | Toshiba Corp | 排気処理装置 |
| JPH01224214A (ja) * | 1988-03-02 | 1989-09-07 | Ebara Infilco Co Ltd | ヒドロキシアパタイトの製造方法 |
| US4936877A (en) * | 1989-07-18 | 1990-06-26 | Advanced Technology Materials, Inc. | Dopant delivery system for semiconductor manufacture |
-
1991
- 1991-08-22 JP JP1991066644U patent/JP2580928Y2/ja not_active Expired - Fee Related
-
1992
- 1992-07-30 US US07/922,687 patent/US5250092A/en not_active Expired - Lifetime
- 1992-08-21 DE DE69205648T patent/DE69205648T2/de not_active Expired - Fee Related
- 1992-08-21 EP EP92307682A patent/EP0529982B1/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7163197B2 (en) | 2000-09-26 | 2007-01-16 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method |
| US7422198B2 (en) | 2000-09-26 | 2008-09-09 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method |
| US7637482B2 (en) | 2000-09-26 | 2009-12-29 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method |
| US7731162B2 (en) | 2000-09-26 | 2010-06-08 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0529982A1 (en) | 1993-03-03 |
| US5250092A (en) | 1993-10-05 |
| DE69205648T2 (de) | 1996-03-21 |
| JP2580928Y2 (ja) | 1998-09-17 |
| EP0529982B1 (en) | 1995-10-25 |
| DE69205648D1 (de) | 1995-11-30 |
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