JPH0576768B2 - - Google Patents

Info

Publication number
JPH0576768B2
JPH0576768B2 JP59068469A JP6846984A JPH0576768B2 JP H0576768 B2 JPH0576768 B2 JP H0576768B2 JP 59068469 A JP59068469 A JP 59068469A JP 6846984 A JP6846984 A JP 6846984A JP H0576768 B2 JPH0576768 B2 JP H0576768B2
Authority
JP
Japan
Prior art keywords
emitter
area
transistor
base
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59068469A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60211979A (ja
Inventor
Hisao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59068469A priority Critical patent/JPS60211979A/ja
Publication of JPS60211979A publication Critical patent/JPS60211979A/ja
Publication of JPH0576768B2 publication Critical patent/JPH0576768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP59068469A 1984-04-06 1984-04-06 トランジスタ装置 Granted JPS60211979A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59068469A JPS60211979A (ja) 1984-04-06 1984-04-06 トランジスタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59068469A JPS60211979A (ja) 1984-04-06 1984-04-06 トランジスタ装置

Publications (2)

Publication Number Publication Date
JPS60211979A JPS60211979A (ja) 1985-10-24
JPH0576768B2 true JPH0576768B2 (2) 1993-10-25

Family

ID=13374576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59068469A Granted JPS60211979A (ja) 1984-04-06 1984-04-06 トランジスタ装置

Country Status (1)

Country Link
JP (1) JPS60211979A (2)

Also Published As

Publication number Publication date
JPS60211979A (ja) 1985-10-24

Similar Documents

Publication Publication Date Title
US5268589A (en) Semiconductor chip having at least one electrical resistor means
US4312011A (en) Darlington power transistor
US4500900A (en) Emitter ballast resistor configuration
JPH0576768B2 (2)
JP3008182B2 (ja) 半導体素子のボディ・コンタクト構造
JP3152561B2 (ja) 半導体集積回路
JP3253468B2 (ja) 半導体装置
US5594272A (en) Bipolar transistor with base and emitter contact holes having shorter central portions
KR920003801B1 (ko) 프로그램가능 반도체 셀 구조
JPS6124264A (ja) 半導体装置
JPH01209760A (ja) 半導体装置
JP2953623B2 (ja) プレーナ型サイリスタ
JPH0723958Y2 (ja) 半導体装置
JPS6142952A (ja) 半導体装置
JPH05864B2 (2)
JPS61260674A (ja) 電圧制御可変電流増幅率バイポ−ラトランジスタ
JP3131694B2 (ja) パワートランジスタデバイス
JPH0432754Y2 (2)
JPH0130308B2 (2)
JPS6116569A (ja) 半導体集積回路装置
JPH0348653B2 (2)
JPS62143465A (ja) 半導体装置
JPS63215073A (ja) バイポ−ラ集積回路
JPH0588542B2 (2)
JPH0587187B2 (2)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term