JPH0586873B2 - - Google Patents

Info

Publication number
JPH0586873B2
JPH0586873B2 JP59131045A JP13104584A JPH0586873B2 JP H0586873 B2 JPH0586873 B2 JP H0586873B2 JP 59131045 A JP59131045 A JP 59131045A JP 13104584 A JP13104584 A JP 13104584A JP H0586873 B2 JPH0586873 B2 JP H0586873B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
type
semiconductor
layer
dimensional carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59131045A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6112081A (ja
Inventor
Toshuki Usagawa
Susumu Takahashi
Juichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59131045A priority Critical patent/JPS6112081A/ja
Publication of JPS6112081A publication Critical patent/JPS6112081A/ja
Publication of JPH0586873B2 publication Critical patent/JPH0586873B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/40FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59131045A 1984-06-27 1984-06-27 半導体装置 Granted JPS6112081A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59131045A JPS6112081A (ja) 1984-06-27 1984-06-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59131045A JPS6112081A (ja) 1984-06-27 1984-06-27 半導体装置

Publications (2)

Publication Number Publication Date
JPS6112081A JPS6112081A (ja) 1986-01-20
JPH0586873B2 true JPH0586873B2 (fr) 1993-12-14

Family

ID=15048724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59131045A Granted JPS6112081A (ja) 1984-06-27 1984-06-27 半導体装置

Country Status (1)

Country Link
JP (1) JPS6112081A (fr)

Also Published As

Publication number Publication date
JPS6112081A (ja) 1986-01-20

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