JPH06349925A - エピタキシャル成長層の評価方法及びプロセス評価用テストパターン構造 - Google Patents

エピタキシャル成長層の評価方法及びプロセス評価用テストパターン構造

Info

Publication number
JPH06349925A
JPH06349925A JP5135564A JP13556493A JPH06349925A JP H06349925 A JPH06349925 A JP H06349925A JP 5135564 A JP5135564 A JP 5135564A JP 13556493 A JP13556493 A JP 13556493A JP H06349925 A JPH06349925 A JP H06349925A
Authority
JP
Japan
Prior art keywords
layer
epitaxial growth
stripe
substrate
evaluating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5135564A
Other languages
English (en)
Japanese (ja)
Inventor
Muneharu Miyashita
宗治 宮下
Nobuyoshi Ogasawara
伸好 小笠原
Tadashi Kimura
忠 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5135564A priority Critical patent/JPH06349925A/ja
Priority to US08/253,568 priority patent/US5477325A/en
Priority to EP94108625A priority patent/EP0632494A3/fr
Publication of JPH06349925A publication Critical patent/JPH06349925A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Lasers (AREA)
JP5135564A 1993-06-07 1993-06-07 エピタキシャル成長層の評価方法及びプロセス評価用テストパターン構造 Pending JPH06349925A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5135564A JPH06349925A (ja) 1993-06-07 1993-06-07 エピタキシャル成長層の評価方法及びプロセス評価用テストパターン構造
US08/253,568 US5477325A (en) 1993-06-07 1994-06-03 Method for evaluating epitaxial layers and test pattern for process evaluation
EP94108625A EP0632494A3 (fr) 1993-06-07 1994-06-06 Méthode d'évaluation de couches épitaxiales et structure de test pour évaluation de procédé.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5135564A JPH06349925A (ja) 1993-06-07 1993-06-07 エピタキシャル成長層の評価方法及びプロセス評価用テストパターン構造

Publications (1)

Publication Number Publication Date
JPH06349925A true JPH06349925A (ja) 1994-12-22

Family

ID=15154767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5135564A Pending JPH06349925A (ja) 1993-06-07 1993-06-07 エピタキシャル成長層の評価方法及びプロセス評価用テストパターン構造

Country Status (3)

Country Link
US (1) US5477325A (fr)
EP (1) EP0632494A3 (fr)
JP (1) JPH06349925A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6010914A (en) * 1996-10-28 2000-01-04 Nec Corporation Method for manufacturing a semiconductor device
JP2010212581A (ja) * 2009-03-12 2010-09-24 Denso Corp 炭化珪素半導体装置の製造方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552327A (en) * 1994-08-26 1996-09-03 North Carolina State University Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
KR0150102B1 (ko) * 1995-08-22 1998-12-01 김주용 테스트 패턴 및 이를 이용한 절연막 두께 측정방법
JP3058134B2 (ja) * 1997-09-30 2000-07-04 日本電気株式会社 半導体素子の製造方法
US6464842B1 (en) 1999-06-22 2002-10-15 President And Fellows Of Harvard College Control of solid state dimensional features
US6783643B2 (en) 1999-06-22 2004-08-31 President And Fellows Of Harvard College Control of solid state dimensional features
US7582490B2 (en) 1999-06-22 2009-09-01 President And Fellows Of Harvard College Controlled fabrication of gaps in electrically conducting structures
US7258838B2 (en) 1999-06-22 2007-08-21 President And Fellows Of Harvard College Solid state molecular probe device
EP1192103A1 (fr) * 1999-06-22 2002-04-03 President And Fellows of Harvard College Procede permettant de respecter les caracteristiques dimensionnelles d'une structure a l'etat solide
US7118657B2 (en) 1999-06-22 2006-10-10 President And Fellows Of Harvard College Pulsed ion beam control of solid state features
US6920168B1 (en) * 2000-02-22 2005-07-19 Triquint Technology Holding Co. Optical assembly
US6339955B1 (en) * 2000-03-31 2002-01-22 Advanced Micro Devices, Inc. Thickness measurement using AFM for next generation lithography
JP2002217105A (ja) * 2001-01-17 2002-08-02 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
US6878559B2 (en) * 2002-09-23 2005-04-12 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US7063991B1 (en) 2004-07-28 2006-06-20 Advanced Micro Devices, Inc. Methods of determining characteristics of doped regions on device wafers, and system for accomplishing same
GB0703300D0 (en) * 2007-02-21 2007-03-28 Optical Reference Systems Ltd Semiconductor Growth Control Method and Apparatus
DE102007019122B3 (de) * 2007-04-23 2008-06-26 Texas Instruments Deutschland Gmbh Verfahren zur Temperaturregelung während eines Epitaxieschrittes von Halbleiterwafern
CN101540270B (zh) * 2008-03-20 2010-11-10 华亚科技股份有限公司 监控制程的系统和方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3270551D1 (en) * 1981-03-16 1986-05-22 Energy Conversion Devices Inc Optical methods for controlling layer thickness
JPS6235635A (ja) * 1985-08-09 1987-02-16 Nippon Telegr & Teleph Corp <Ntt> 膜厚分布測定方法および装置
JP2608132B2 (ja) * 1989-03-27 1997-05-07 日本電信電話株式会社 結晶成長監視装置
JPH0341720A (ja) * 1989-07-07 1991-02-22 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成装置
JP2606753B2 (ja) * 1989-09-01 1997-05-07 日本電信電話株式会社 エピタキシャル成長層の成長状況測定法及びそれに用いるエピタキシャル成長層の成長状況測定装置
JPH06103715B2 (ja) * 1990-11-30 1994-12-14 信越半導体株式会社 パターンシフト測定方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6010914A (en) * 1996-10-28 2000-01-04 Nec Corporation Method for manufacturing a semiconductor device
JP2010212581A (ja) * 2009-03-12 2010-09-24 Denso Corp 炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
EP0632494A3 (fr) 1995-12-06
EP0632494A2 (fr) 1995-01-04
US5477325A (en) 1995-12-19

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