JPH07504509A - Soiアクチュエーター及びマイクロセンサー - Google Patents

Soiアクチュエーター及びマイクロセンサー

Info

Publication number
JPH07504509A
JPH07504509A JP5515882A JP51588293A JPH07504509A JP H07504509 A JPH07504509 A JP H07504509A JP 5515882 A JP5515882 A JP 5515882A JP 51588293 A JP51588293 A JP 51588293A JP H07504509 A JPH07504509 A JP H07504509A
Authority
JP
Japan
Prior art keywords
diaphragm
layer
silicon
cavity
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5515882A
Other languages
English (en)
Japanese (ja)
Inventor
ザブラツキー,ポール・エム
モリソン,リチヤード・エイチ,ジユニア
Original Assignee
コピン・コーポレーシヨン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コピン・コーポレーシヨン filed Critical コピン・コーポレーシヨン
Publication of JPH07504509A publication Critical patent/JPH07504509A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/43Electric condenser making
    • Y10T29/435Solid dielectric type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
JP5515882A 1992-03-06 1993-03-05 Soiアクチュエーター及びマイクロセンサー Pending JPH07504509A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/847,690 US5177661A (en) 1989-01-13 1992-03-06 SOI diaphgram sensor
US847,690 1992-03-06
PCT/US1993/001952 WO1993018382A1 (fr) 1992-03-06 1993-03-05 Actionneurs et microcapteurs silicium sur isolant

Publications (1)

Publication Number Publication Date
JPH07504509A true JPH07504509A (ja) 1995-05-18

Family

ID=25301252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5515882A Pending JPH07504509A (ja) 1992-03-06 1993-03-05 Soiアクチュエーター及びマイクロセンサー

Country Status (7)

Country Link
US (2) US5177661A (fr)
EP (1) EP0629286B1 (fr)
JP (1) JPH07504509A (fr)
AT (1) ATE141008T1 (fr)
CA (1) CA2130677A1 (fr)
DE (1) DE69303893T2 (fr)
WO (1) WO1993018382A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541833B2 (en) 1998-08-27 2003-04-01 Infineon Technologies Ag Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component
JP2004513356A (ja) * 2000-11-10 2004-04-30 ヴァイサラ オーワイジェー 表面微細加工した絶対圧力センサとその製造方法
JP2013003031A (ja) * 2011-06-20 2013-01-07 Seiko Epson Corp 圧力センサーの製造方法、圧力センサーデバイスの製造方法、圧力センサー及び圧力センサーデバイス

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5490034A (en) * 1989-01-13 1996-02-06 Kopin Corporation SOI actuators and microsensors
US5177661A (en) * 1989-01-13 1993-01-05 Kopin Corporation SOI diaphgram sensor
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5767405A (en) 1992-04-07 1998-06-16 The Charles Stark Draper Laboratory, Inc. Comb-drive micromechanical tuning fork gyroscope with piezoelectric readout
JP2769661B2 (ja) * 1992-09-29 1998-06-25 三菱電機株式会社 半導体装置およびその製造方法
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
US20030199179A1 (en) * 1993-11-16 2003-10-23 Formfactor, Inc. Contact tip structure for microelectronic interconnection elements and method of making same
US7073254B2 (en) * 1993-11-16 2006-07-11 Formfactor, Inc. Method for mounting a plurality of spring contact elements
US20020053734A1 (en) * 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
SE9304145D0 (sv) * 1993-12-10 1993-12-10 Pharmacia Lkb Biotech Sätt att tillverka hålrumsstrukturer
US5415726A (en) * 1993-12-21 1995-05-16 Delco Electronics Corporation Method of making a bridge-supported accelerometer structure
KR0132490B1 (ko) * 1994-07-21 1998-04-16 문정환 박막트랜지스터 제조방법
US5646348A (en) 1994-08-29 1997-07-08 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode and fabrication technique therefor
US5581035A (en) 1994-08-29 1996-12-03 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode
US5894452A (en) * 1994-10-21 1999-04-13 The Board Of Trustees Of The Leland Stanford Junior University Microfabricated ultrasonic immersion transducer
FI100918B (fi) * 1995-02-17 1998-03-13 Vaisala Oy Pintamikromekaaninen, symmetrinen paine-eroanturi
JPH08274350A (ja) * 1995-03-29 1996-10-18 Yokogawa Electric Corp 半導体圧力センサ及びその製造方法
US5578528A (en) * 1995-05-02 1996-11-26 Industrial Technology Research Institute Method of fabrication glass diaphragm on silicon macrostructure
US5567332A (en) * 1995-06-09 1996-10-22 Fsi International Micro-machine manufacturing process
FR2736654B1 (fr) * 1995-07-13 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements
JPH0983029A (ja) * 1995-09-11 1997-03-28 Mitsubishi Electric Corp 薄膜圧電素子の製造方法
US8033838B2 (en) * 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
DE1009986T1 (de) * 1996-07-10 2001-05-03 Honeywell Data Instruments, Inc. Fehlerkompensierter druckwandler
EP0890998A1 (fr) * 1997-07-07 1999-01-13 STMicroelectronics S.r.l. Méthode pour former et capteur de pression piézorésistif avec un diaphragma du matériau semi-conducteur poly-cristallin
US6472244B1 (en) 1996-07-31 2002-10-29 Sgs-Thomson Microelectronics S.R.L. Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material
DE19648424C1 (de) * 1996-11-22 1998-06-25 Siemens Ag Mikromechanischer Sensor
SG86994A1 (en) * 1997-07-11 2002-03-19 Inst Of Microelectronics Nat U Method of fabricating a silicon microphone
JP3426498B2 (ja) * 1997-08-13 2003-07-14 株式会社日立ユニシアオートモティブ 圧力センサ
US5982709A (en) * 1998-03-31 1999-11-09 The Board Of Trustees Of The Leland Stanford Junior University Acoustic transducers and method of microfabrication
DE19839606C1 (de) 1998-08-31 2000-04-27 Siemens Ag Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
US6002507A (en) 1998-12-01 1999-12-14 Xerox Corpoation Method and apparatus for an integrated laser beam scanner
USRE38437E1 (en) 1998-12-01 2004-02-24 Xerox Corporation Method and apparatus for an integrated laser beam scanner using a carrier substrate
US7273763B1 (en) * 1998-12-15 2007-09-25 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Method of producing a micro-electromechanical element
US6297069B1 (en) * 1999-01-28 2001-10-02 Honeywell Inc. Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly
US6232139B1 (en) * 1999-01-29 2001-05-15 Sandia Corporation Method of making suspended thin-film semiconductor piezoelectric devices
US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
US6272928B1 (en) * 2000-01-24 2001-08-14 Kulite Semiconductor Products Hermetically sealed absolute and differential pressure transducer
DE10024266B4 (de) * 2000-05-17 2010-06-17 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements
US6521965B1 (en) * 2000-09-12 2003-02-18 Robert Bosch Gmbh Integrated pressure sensor
US6441503B1 (en) 2001-01-03 2002-08-27 Amkor Technology, Inc. Bond wire pressure sensor die package
US6420201B1 (en) * 2001-01-03 2002-07-16 Amkor Technology, Inc. Method for forming a bond wire pressure sensor die package
US6432737B1 (en) 2001-01-03 2002-08-13 Amkor Technology, Inc. Method for forming a flip chip pressure sensor die package
FR2822541B1 (fr) * 2001-03-21 2003-10-03 Commissariat Energie Atomique Procedes et dispositifs de fabrication de detecteurs de rayonnement
US6552404B1 (en) * 2001-04-17 2003-04-22 Analog Devices, Inc. Integratable transducer structure
US6661080B1 (en) 2001-06-28 2003-12-09 Amkor Technology, Inc. Structure for backside saw cavity protection
US6586824B1 (en) 2001-07-26 2003-07-01 Amkor Technology, Inc. Reduced thickness packaged electronic device
WO2003037212A2 (fr) 2001-10-30 2003-05-08 Lesinski George S Procede d'implantation dans la cochlee d'un element de commande microscopique de prothese auditive
US6755982B2 (en) * 2002-01-07 2004-06-29 Xerox Corporation Self-aligned micro hinges
US6828171B2 (en) * 2002-01-16 2004-12-07 Xerox Corporation Systems and methods for thermal isolation of a silicon structure
US6759264B2 (en) * 2002-05-17 2004-07-06 Ligh Tuning Technology Inc. Pressure type fingerprint sensor fabrication method
KR100479687B1 (ko) * 2002-05-30 2005-03-30 한국과학기술연구원 캔틸레버 센서 및 그 제조 방법
WO2004105237A1 (fr) * 2003-05-26 2004-12-02 Murata Manufacturing Co., Ltd. Composant electronique piezoelectrique, son procede de production, equipement de communication
JP2005201818A (ja) * 2004-01-16 2005-07-28 Alps Electric Co Ltd 圧力センサ
US7118991B2 (en) * 2004-04-01 2006-10-10 Delphi Technologies, Inc. Encapsulation wafer process
KR100605368B1 (ko) 2004-10-20 2006-07-28 삼성전자주식회사 Soi기판, 그 제조방법, 그리고, 그 soi기판을이용한 부유 구조체 제조 방법
US7017418B1 (en) * 2004-12-15 2006-03-28 General Electric Company System and method for sensing pressure
US20080213981A1 (en) * 2005-01-31 2008-09-04 Freescale Semiconductor, Inc. Method of Fabricating a Silicon-On-Insulator Structure
US7884432B2 (en) * 2005-03-22 2011-02-08 Ametek, Inc. Apparatus and methods for shielding integrated circuitry
US7371601B2 (en) * 2005-05-12 2008-05-13 Delphi Technologies, Inc. Piezoresistive sensing structure
TWI270667B (en) * 2005-06-01 2007-01-11 Touch Micro System Tech Method of calibrating zero offset of a pressure sensor
US7231828B2 (en) * 2005-09-23 2007-06-19 Kulite Semiconductor Products, Inc. High temperature pressure sensing system
DE102005060855A1 (de) * 2005-12-20 2007-06-28 Robert Bosch Gmbh Mikromechanischer kapazitiver Druckwandler und Herstellungsverfahren
US7709264B2 (en) * 2006-09-21 2010-05-04 Philip Morris Usa Inc. Handheld microcantilever-based sensor for detecting tobacco-specific nitrosamines
CA2623793C (fr) * 2008-03-03 2010-11-23 Schlumberger Canada Limited Appareillage microfluidique et methode de mesure des proprietes thermophysiques du fluide d'un reservoir
DE102008040521A1 (de) * 2008-07-18 2010-01-21 Robert Bosch Gmbh Verfahren zur Herstellung eines Bauelements, Verfahren zur Herstellung einer Bauelementanordnung, Bauelement und Bauelementanordnung
WO2011013111A2 (fr) 2009-07-31 2011-02-03 Schlumberger Canada Limited Mesure de la pression d'un fluide d'un réservoir dans un dispositif micro-fluidique
US9131896B2 (en) * 2009-08-12 2015-09-15 Medos International S.A.R.L. In situ offset compensation for pressure sensors
FR2959564B1 (fr) 2010-04-28 2012-06-08 Commissariat Energie Atomique Dispositif formant manometre destine a la mesure de pression de fluide diphasique, procede de realisation et reseau fluidique associes
US20120194286A1 (en) * 2011-02-01 2012-08-02 Baolab Microsystems Sl Methods and systems for mems cmos devices having arrays of elements
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US8415768B1 (en) 2012-07-06 2013-04-09 LuxVue Technology Corporation Compliant monopolar micro device transfer head with silicon electrode
US8791530B2 (en) * 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
EP2919646B8 (fr) 2012-11-14 2019-06-12 Vectorious Medical Technologies Ltd. Compensation de dérive pour transducteur de pression à base de capacité implanté
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
EP2986252B1 (fr) 2013-04-18 2018-07-25 Vectorious Medical Technologies Ltd. Implant sensoriel alimenté à distance
US10205488B2 (en) 2013-04-18 2019-02-12 Vectorious Medical Technologies Ltd. Low-power high-accuracy clock harvesting in inductive coupling systems
EP3008553B1 (fr) 2013-06-12 2023-06-07 Rohinni, Inc. Rétroéclairage de clavier au moyen de sources de génération de lumière réalisées par dépôt
WO2015013827A1 (fr) 2013-08-02 2015-02-05 Motion Engine Inc. Capteur de mouvement à système microélectromécanique (mems) pour détection de vitesse angulaire de sous-résonance
US20170030788A1 (en) 2014-04-10 2017-02-02 Motion Engine Inc. Mems pressure sensor
US11674803B2 (en) 2014-06-02 2023-06-13 Motion Engine, Inc. Multi-mass MEMS motion sensor
US11287486B2 (en) 2014-12-09 2022-03-29 Motion Engine, Inc. 3D MEMS magnetometer and associated methods
US10407299B2 (en) 2015-01-15 2019-09-10 Motion Engine Inc. 3D MEMS device with hermetic cavity
WO2016178197A1 (fr) 2015-05-07 2016-11-10 Vectorious Medical Technologies Ltd Déploiement et fixation d'un implant à travers une paroi d'organe
DE102015119272A1 (de) * 2015-11-09 2017-05-11 Endress+Hauser Gmbh+Co. Kg Kapazitiver Drucksensor und Verfahren zu dessen Herstellung
US11206988B2 (en) 2015-12-30 2021-12-28 Vectorious Medical Technologies Ltd. Power-efficient pressure-sensor implant
DE102016200497A1 (de) * 2016-01-15 2017-07-20 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
US10629393B2 (en) 2016-01-15 2020-04-21 Rohinni, LLC Apparatus and method of backlighting through a cover on the apparatus
US10017381B2 (en) * 2017-04-03 2018-07-10 Innovative Micro Technology Microfabricated pressure transducer
EP3258235A1 (fr) 2016-06-16 2017-12-20 Huba Control Ag Transducteur de pression différentielle
EP3392633B1 (fr) 2017-04-19 2019-12-11 Huba Control Ag Capteur de pression
CN108862186B (zh) * 2018-07-13 2021-07-06 河南汇纳科技有限公司 一种多传感器的协同制造工艺流程
CN209857926U (zh) * 2019-02-12 2019-12-27 精量电子(深圳)有限公司 传感器
EP3748323B1 (fr) 2019-06-03 2022-01-12 Huba Control Ag Capteur de pression différentielle

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758830A (en) * 1972-04-10 1973-09-11 Hewlett Packard Co Transducer formed in peripherally supported thin semiconductor web
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US3938175A (en) * 1974-04-24 1976-02-10 General Motors Corporation Polycrystalline silicon pressure transducer
US4003127A (en) * 1974-11-25 1977-01-18 General Motors Corporation Polycrystalline silicon pressure transducer
US4040172A (en) * 1975-05-01 1977-08-09 Kulite Semiconductor Products, Inc. Method of manufacturing integral transducer assemblies employing built-in pressure limiting
US4208782A (en) * 1977-12-12 1980-06-24 Kulite Semiconductor Products, Inc. Methods of fabricating transducers employing flat bondable surfaces with buried contact areas
US4222815A (en) * 1979-06-04 1980-09-16 The Babcock & Wilcox Company Isotropic etching of silicon strain gages
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
GB8506589D0 (en) * 1985-03-14 1985-04-17 Ici Plc Pressure sensor
US4592238A (en) * 1985-04-15 1986-06-03 Gould Inc. Laser-recrystallized diaphragm pressure sensor and method of making
US4665610A (en) * 1985-04-22 1987-05-19 Stanford University Method of making a semiconductor transducer having multiple level diaphragm structure
US4744863A (en) * 1985-04-26 1988-05-17 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US4982351A (en) * 1986-05-05 1991-01-01 Texas Instruments Incorporated Low cost high precision sensor
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
GB2198610B (en) * 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of producing a diaphragm on a substrate
GB2198611B (en) * 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of forming a sealed diaphragm on a substrate
JP2508070B2 (ja) * 1987-04-08 1996-06-19 日本電装株式会社 圧力検出素子及びその製造方法
US4812801A (en) * 1987-05-14 1989-03-14 The United States Of America As Represented By The Secretary Of The Air Force Solid state gas pressure sensor
JPH0797642B2 (ja) * 1987-05-15 1995-10-18 日産自動車株式会社 圧力変換装置の製造方法
JPH01136378A (ja) * 1987-11-24 1989-05-29 Nissan Motor Co Ltd 圧力変換装置の製造方法
US4816125A (en) * 1987-11-25 1989-03-28 The Regents Of The University Of California IC processed piezoelectric microphone
US4783821A (en) * 1987-11-25 1988-11-08 The Regents Of The University Of California IC processed piezoelectric microphone
JPH01145872A (ja) * 1987-12-02 1989-06-07 Yokogawa Electric Corp 半導体圧力センサの製造方法
US4904978A (en) * 1988-04-29 1990-02-27 Solartron Electronics, Inc. Mechanical sensor for high temperature environments
US4808549A (en) * 1988-05-27 1989-02-28 Ford Motor Company Method for fabricating a silicon force transducer
US4849070A (en) * 1988-09-14 1989-07-18 The United States Of America As Represented By The Secretary Of The Army Process for fabricating three-dimensional, free-standing microstructures
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US5177661A (en) * 1989-01-13 1993-01-05 Kopin Corporation SOI diaphgram sensor
US5258097A (en) * 1992-11-12 1993-11-02 Ford Motor Company Dry-release method for sacrificial layer microstructure fabrication

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541833B2 (en) 1998-08-27 2003-04-01 Infineon Technologies Ag Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component
JP2004513356A (ja) * 2000-11-10 2004-04-30 ヴァイサラ オーワイジェー 表面微細加工した絶対圧力センサとその製造方法
JP2013003031A (ja) * 2011-06-20 2013-01-07 Seiko Epson Corp 圧力センサーの製造方法、圧力センサーデバイスの製造方法、圧力センサー及び圧力センサーデバイス

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ATE141008T1 (de) 1996-08-15
DE69303893T2 (de) 1996-11-28
US5493470A (en) 1996-02-20
EP0629286A1 (fr) 1994-12-21
WO1993018382A1 (fr) 1993-09-16
CA2130677A1 (fr) 1993-09-07
DE69303893D1 (de) 1996-09-05
EP0629286B1 (fr) 1996-07-31
US5177661A (en) 1993-01-05

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