JPH07504509A - Soiアクチュエーター及びマイクロセンサー - Google Patents
Soiアクチュエーター及びマイクロセンサーInfo
- Publication number
- JPH07504509A JPH07504509A JP5515882A JP51588293A JPH07504509A JP H07504509 A JPH07504509 A JP H07504509A JP 5515882 A JP5515882 A JP 5515882A JP 51588293 A JP51588293 A JP 51588293A JP H07504509 A JPH07504509 A JP H07504509A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- layer
- silicon
- cavity
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- 229910052710 silicon Inorganic materials 0.000 claims description 54
- 239000010703 silicon Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 239000000615 nonconductor Substances 0.000 claims description 3
- 230000003796 beauty Effects 0.000 claims description 2
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 235000012431 wafers Nutrition 0.000 description 44
- 150000004767 nitrides Chemical class 0.000 description 27
- 238000005530 etching Methods 0.000 description 21
- 239000007788 liquid Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000001953 recrystallisation Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 241000287462 Phalacrocorax carbo Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009963 fulling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/847,690 US5177661A (en) | 1989-01-13 | 1992-03-06 | SOI diaphgram sensor |
| US847,690 | 1992-03-06 | ||
| PCT/US1993/001952 WO1993018382A1 (fr) | 1992-03-06 | 1993-03-05 | Actionneurs et microcapteurs silicium sur isolant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07504509A true JPH07504509A (ja) | 1995-05-18 |
Family
ID=25301252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5515882A Pending JPH07504509A (ja) | 1992-03-06 | 1993-03-05 | Soiアクチュエーター及びマイクロセンサー |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5177661A (fr) |
| EP (1) | EP0629286B1 (fr) |
| JP (1) | JPH07504509A (fr) |
| AT (1) | ATE141008T1 (fr) |
| CA (1) | CA2130677A1 (fr) |
| DE (1) | DE69303893T2 (fr) |
| WO (1) | WO1993018382A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6541833B2 (en) | 1998-08-27 | 2003-04-01 | Infineon Technologies Ag | Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component |
| JP2004513356A (ja) * | 2000-11-10 | 2004-04-30 | ヴァイサラ オーワイジェー | 表面微細加工した絶対圧力センサとその製造方法 |
| JP2013003031A (ja) * | 2011-06-20 | 2013-01-07 | Seiko Epson Corp | 圧力センサーの製造方法、圧力センサーデバイスの製造方法、圧力センサー及び圧力センサーデバイス |
Families Citing this family (93)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5490034A (en) * | 1989-01-13 | 1996-02-06 | Kopin Corporation | SOI actuators and microsensors |
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| US5767405A (en) | 1992-04-07 | 1998-06-16 | The Charles Stark Draper Laboratory, Inc. | Comb-drive micromechanical tuning fork gyroscope with piezoelectric readout |
| JP2769661B2 (ja) * | 1992-09-29 | 1998-06-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5369544A (en) * | 1993-04-05 | 1994-11-29 | Ford Motor Company | Silicon-on-insulator capacitive surface micromachined absolute pressure sensor |
| US20030199179A1 (en) * | 1993-11-16 | 2003-10-23 | Formfactor, Inc. | Contact tip structure for microelectronic interconnection elements and method of making same |
| US7073254B2 (en) * | 1993-11-16 | 2006-07-11 | Formfactor, Inc. | Method for mounting a plurality of spring contact elements |
| US20020053734A1 (en) * | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
| SE9304145D0 (sv) * | 1993-12-10 | 1993-12-10 | Pharmacia Lkb Biotech | Sätt att tillverka hålrumsstrukturer |
| US5415726A (en) * | 1993-12-21 | 1995-05-16 | Delco Electronics Corporation | Method of making a bridge-supported accelerometer structure |
| KR0132490B1 (ko) * | 1994-07-21 | 1998-04-16 | 문정환 | 박막트랜지스터 제조방법 |
| US5646348A (en) | 1994-08-29 | 1997-07-08 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode and fabrication technique therefor |
| US5581035A (en) | 1994-08-29 | 1996-12-03 | The Charles Stark Draper Laboratory, Inc. | Micromechanical sensor with a guard band electrode |
| US5894452A (en) * | 1994-10-21 | 1999-04-13 | The Board Of Trustees Of The Leland Stanford Junior University | Microfabricated ultrasonic immersion transducer |
| FI100918B (fi) * | 1995-02-17 | 1998-03-13 | Vaisala Oy | Pintamikromekaaninen, symmetrinen paine-eroanturi |
| JPH08274350A (ja) * | 1995-03-29 | 1996-10-18 | Yokogawa Electric Corp | 半導体圧力センサ及びその製造方法 |
| US5578528A (en) * | 1995-05-02 | 1996-11-26 | Industrial Technology Research Institute | Method of fabrication glass diaphragm on silicon macrostructure |
| US5567332A (en) * | 1995-06-09 | 1996-10-22 | Fsi International | Micro-machine manufacturing process |
| FR2736654B1 (fr) * | 1995-07-13 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements |
| JPH0983029A (ja) * | 1995-09-11 | 1997-03-28 | Mitsubishi Electric Corp | 薄膜圧電素子の製造方法 |
| US8033838B2 (en) * | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
| DE1009986T1 (de) * | 1996-07-10 | 2001-05-03 | Honeywell Data Instruments, Inc. | Fehlerkompensierter druckwandler |
| EP0890998A1 (fr) * | 1997-07-07 | 1999-01-13 | STMicroelectronics S.r.l. | Méthode pour former et capteur de pression piézorésistif avec un diaphragma du matériau semi-conducteur poly-cristallin |
| US6472244B1 (en) | 1996-07-31 | 2002-10-29 | Sgs-Thomson Microelectronics S.R.L. | Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material |
| DE19648424C1 (de) * | 1996-11-22 | 1998-06-25 | Siemens Ag | Mikromechanischer Sensor |
| SG86994A1 (en) * | 1997-07-11 | 2002-03-19 | Inst Of Microelectronics Nat U | Method of fabricating a silicon microphone |
| JP3426498B2 (ja) * | 1997-08-13 | 2003-07-14 | 株式会社日立ユニシアオートモティブ | 圧力センサ |
| US5982709A (en) * | 1998-03-31 | 1999-11-09 | The Board Of Trustees Of The Leland Stanford Junior University | Acoustic transducers and method of microfabrication |
| DE19839606C1 (de) | 1998-08-31 | 2000-04-27 | Siemens Ag | Mikromechanisches Bauelement und Verfahren zu dessen Herstellung |
| US6002507A (en) | 1998-12-01 | 1999-12-14 | Xerox Corpoation | Method and apparatus for an integrated laser beam scanner |
| USRE38437E1 (en) | 1998-12-01 | 2004-02-24 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
| US7273763B1 (en) * | 1998-12-15 | 2007-09-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Method of producing a micro-electromechanical element |
| US6297069B1 (en) * | 1999-01-28 | 2001-10-02 | Honeywell Inc. | Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly |
| US6232139B1 (en) * | 1999-01-29 | 2001-05-15 | Sandia Corporation | Method of making suspended thin-film semiconductor piezoelectric devices |
| US6056888A (en) * | 1999-04-19 | 2000-05-02 | Motorola, Inc. | Electronic component and method of manufacture |
| US6272928B1 (en) * | 2000-01-24 | 2001-08-14 | Kulite Semiconductor Products | Hermetically sealed absolute and differential pressure transducer |
| DE10024266B4 (de) * | 2000-05-17 | 2010-06-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements |
| US6521965B1 (en) * | 2000-09-12 | 2003-02-18 | Robert Bosch Gmbh | Integrated pressure sensor |
| US6441503B1 (en) | 2001-01-03 | 2002-08-27 | Amkor Technology, Inc. | Bond wire pressure sensor die package |
| US6420201B1 (en) * | 2001-01-03 | 2002-07-16 | Amkor Technology, Inc. | Method for forming a bond wire pressure sensor die package |
| US6432737B1 (en) | 2001-01-03 | 2002-08-13 | Amkor Technology, Inc. | Method for forming a flip chip pressure sensor die package |
| FR2822541B1 (fr) * | 2001-03-21 | 2003-10-03 | Commissariat Energie Atomique | Procedes et dispositifs de fabrication de detecteurs de rayonnement |
| US6552404B1 (en) * | 2001-04-17 | 2003-04-22 | Analog Devices, Inc. | Integratable transducer structure |
| US6661080B1 (en) | 2001-06-28 | 2003-12-09 | Amkor Technology, Inc. | Structure for backside saw cavity protection |
| US6586824B1 (en) | 2001-07-26 | 2003-07-01 | Amkor Technology, Inc. | Reduced thickness packaged electronic device |
| WO2003037212A2 (fr) | 2001-10-30 | 2003-05-08 | Lesinski George S | Procede d'implantation dans la cochlee d'un element de commande microscopique de prothese auditive |
| US6755982B2 (en) * | 2002-01-07 | 2004-06-29 | Xerox Corporation | Self-aligned micro hinges |
| US6828171B2 (en) * | 2002-01-16 | 2004-12-07 | Xerox Corporation | Systems and methods for thermal isolation of a silicon structure |
| US6759264B2 (en) * | 2002-05-17 | 2004-07-06 | Ligh Tuning Technology Inc. | Pressure type fingerprint sensor fabrication method |
| KR100479687B1 (ko) * | 2002-05-30 | 2005-03-30 | 한국과학기술연구원 | 캔틸레버 센서 및 그 제조 방법 |
| WO2004105237A1 (fr) * | 2003-05-26 | 2004-12-02 | Murata Manufacturing Co., Ltd. | Composant electronique piezoelectrique, son procede de production, equipement de communication |
| JP2005201818A (ja) * | 2004-01-16 | 2005-07-28 | Alps Electric Co Ltd | 圧力センサ |
| US7118991B2 (en) * | 2004-04-01 | 2006-10-10 | Delphi Technologies, Inc. | Encapsulation wafer process |
| KR100605368B1 (ko) | 2004-10-20 | 2006-07-28 | 삼성전자주식회사 | Soi기판, 그 제조방법, 그리고, 그 soi기판을이용한 부유 구조체 제조 방법 |
| US7017418B1 (en) * | 2004-12-15 | 2006-03-28 | General Electric Company | System and method for sensing pressure |
| US20080213981A1 (en) * | 2005-01-31 | 2008-09-04 | Freescale Semiconductor, Inc. | Method of Fabricating a Silicon-On-Insulator Structure |
| US7884432B2 (en) * | 2005-03-22 | 2011-02-08 | Ametek, Inc. | Apparatus and methods for shielding integrated circuitry |
| US7371601B2 (en) * | 2005-05-12 | 2008-05-13 | Delphi Technologies, Inc. | Piezoresistive sensing structure |
| TWI270667B (en) * | 2005-06-01 | 2007-01-11 | Touch Micro System Tech | Method of calibrating zero offset of a pressure sensor |
| US7231828B2 (en) * | 2005-09-23 | 2007-06-19 | Kulite Semiconductor Products, Inc. | High temperature pressure sensing system |
| DE102005060855A1 (de) * | 2005-12-20 | 2007-06-28 | Robert Bosch Gmbh | Mikromechanischer kapazitiver Druckwandler und Herstellungsverfahren |
| US7709264B2 (en) * | 2006-09-21 | 2010-05-04 | Philip Morris Usa Inc. | Handheld microcantilever-based sensor for detecting tobacco-specific nitrosamines |
| CA2623793C (fr) * | 2008-03-03 | 2010-11-23 | Schlumberger Canada Limited | Appareillage microfluidique et methode de mesure des proprietes thermophysiques du fluide d'un reservoir |
| DE102008040521A1 (de) * | 2008-07-18 | 2010-01-21 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Bauelements, Verfahren zur Herstellung einer Bauelementanordnung, Bauelement und Bauelementanordnung |
| WO2011013111A2 (fr) | 2009-07-31 | 2011-02-03 | Schlumberger Canada Limited | Mesure de la pression d'un fluide d'un réservoir dans un dispositif micro-fluidique |
| US9131896B2 (en) * | 2009-08-12 | 2015-09-15 | Medos International S.A.R.L. | In situ offset compensation for pressure sensors |
| FR2959564B1 (fr) | 2010-04-28 | 2012-06-08 | Commissariat Energie Atomique | Dispositif formant manometre destine a la mesure de pression de fluide diphasique, procede de realisation et reseau fluidique associes |
| US20120194286A1 (en) * | 2011-02-01 | 2012-08-02 | Baolab Microsystems Sl | Methods and systems for mems cmos devices having arrays of elements |
| US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
| US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
| US8791530B2 (en) * | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
| EP2919646B8 (fr) | 2012-11-14 | 2019-06-12 | Vectorious Medical Technologies Ltd. | Compensation de dérive pour transducteur de pression à base de capacité implanté |
| US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
| EP2986252B1 (fr) | 2013-04-18 | 2018-07-25 | Vectorious Medical Technologies Ltd. | Implant sensoriel alimenté à distance |
| US10205488B2 (en) | 2013-04-18 | 2019-02-12 | Vectorious Medical Technologies Ltd. | Low-power high-accuracy clock harvesting in inductive coupling systems |
| EP3008553B1 (fr) | 2013-06-12 | 2023-06-07 | Rohinni, Inc. | Rétroéclairage de clavier au moyen de sources de génération de lumière réalisées par dépôt |
| WO2015013827A1 (fr) | 2013-08-02 | 2015-02-05 | Motion Engine Inc. | Capteur de mouvement à système microélectromécanique (mems) pour détection de vitesse angulaire de sous-résonance |
| US20170030788A1 (en) | 2014-04-10 | 2017-02-02 | Motion Engine Inc. | Mems pressure sensor |
| US11674803B2 (en) | 2014-06-02 | 2023-06-13 | Motion Engine, Inc. | Multi-mass MEMS motion sensor |
| US11287486B2 (en) | 2014-12-09 | 2022-03-29 | Motion Engine, Inc. | 3D MEMS magnetometer and associated methods |
| US10407299B2 (en) | 2015-01-15 | 2019-09-10 | Motion Engine Inc. | 3D MEMS device with hermetic cavity |
| WO2016178197A1 (fr) | 2015-05-07 | 2016-11-10 | Vectorious Medical Technologies Ltd | Déploiement et fixation d'un implant à travers une paroi d'organe |
| DE102015119272A1 (de) * | 2015-11-09 | 2017-05-11 | Endress+Hauser Gmbh+Co. Kg | Kapazitiver Drucksensor und Verfahren zu dessen Herstellung |
| US11206988B2 (en) | 2015-12-30 | 2021-12-28 | Vectorious Medical Technologies Ltd. | Power-efficient pressure-sensor implant |
| DE102016200497A1 (de) * | 2016-01-15 | 2017-07-20 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mikromechanischen Bauelements |
| US10629393B2 (en) | 2016-01-15 | 2020-04-21 | Rohinni, LLC | Apparatus and method of backlighting through a cover on the apparatus |
| US10017381B2 (en) * | 2017-04-03 | 2018-07-10 | Innovative Micro Technology | Microfabricated pressure transducer |
| EP3258235A1 (fr) | 2016-06-16 | 2017-12-20 | Huba Control Ag | Transducteur de pression différentielle |
| EP3392633B1 (fr) | 2017-04-19 | 2019-12-11 | Huba Control Ag | Capteur de pression |
| CN108862186B (zh) * | 2018-07-13 | 2021-07-06 | 河南汇纳科技有限公司 | 一种多传感器的协同制造工艺流程 |
| CN209857926U (zh) * | 2019-02-12 | 2019-12-27 | 精量电子(深圳)有限公司 | 传感器 |
| EP3748323B1 (fr) | 2019-06-03 | 2022-01-12 | Huba Control Ag | Capteur de pression différentielle |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3758830A (en) * | 1972-04-10 | 1973-09-11 | Hewlett Packard Co | Transducer formed in peripherally supported thin semiconductor web |
| US3893228A (en) * | 1972-10-02 | 1975-07-08 | Motorola Inc | Silicon pressure sensor |
| US3938175A (en) * | 1974-04-24 | 1976-02-10 | General Motors Corporation | Polycrystalline silicon pressure transducer |
| US4003127A (en) * | 1974-11-25 | 1977-01-18 | General Motors Corporation | Polycrystalline silicon pressure transducer |
| US4040172A (en) * | 1975-05-01 | 1977-08-09 | Kulite Semiconductor Products, Inc. | Method of manufacturing integral transducer assemblies employing built-in pressure limiting |
| US4208782A (en) * | 1977-12-12 | 1980-06-24 | Kulite Semiconductor Products, Inc. | Methods of fabricating transducers employing flat bondable surfaces with buried contact areas |
| US4222815A (en) * | 1979-06-04 | 1980-09-16 | The Babcock & Wilcox Company | Isotropic etching of silicon strain gages |
| US4332000A (en) * | 1980-10-03 | 1982-05-25 | International Business Machines Corporation | Capacitive pressure transducer |
| GB8506589D0 (en) * | 1985-03-14 | 1985-04-17 | Ici Plc | Pressure sensor |
| US4592238A (en) * | 1985-04-15 | 1986-06-03 | Gould Inc. | Laser-recrystallized diaphragm pressure sensor and method of making |
| US4665610A (en) * | 1985-04-22 | 1987-05-19 | Stanford University | Method of making a semiconductor transducer having multiple level diaphragm structure |
| US4744863A (en) * | 1985-04-26 | 1988-05-17 | Wisconsin Alumni Research Foundation | Sealed cavity semiconductor pressure transducers and method of producing the same |
| US4982351A (en) * | 1986-05-05 | 1991-01-01 | Texas Instruments Incorporated | Low cost high precision sensor |
| JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
| GB2198610B (en) * | 1986-12-13 | 1990-04-04 | Spectrol Reliance Ltd | Method of producing a diaphragm on a substrate |
| GB2198611B (en) * | 1986-12-13 | 1990-04-04 | Spectrol Reliance Ltd | Method of forming a sealed diaphragm on a substrate |
| JP2508070B2 (ja) * | 1987-04-08 | 1996-06-19 | 日本電装株式会社 | 圧力検出素子及びその製造方法 |
| US4812801A (en) * | 1987-05-14 | 1989-03-14 | The United States Of America As Represented By The Secretary Of The Air Force | Solid state gas pressure sensor |
| JPH0797642B2 (ja) * | 1987-05-15 | 1995-10-18 | 日産自動車株式会社 | 圧力変換装置の製造方法 |
| JPH01136378A (ja) * | 1987-11-24 | 1989-05-29 | Nissan Motor Co Ltd | 圧力変換装置の製造方法 |
| US4816125A (en) * | 1987-11-25 | 1989-03-28 | The Regents Of The University Of California | IC processed piezoelectric microphone |
| US4783821A (en) * | 1987-11-25 | 1988-11-08 | The Regents Of The University Of California | IC processed piezoelectric microphone |
| JPH01145872A (ja) * | 1987-12-02 | 1989-06-07 | Yokogawa Electric Corp | 半導体圧力センサの製造方法 |
| US4904978A (en) * | 1988-04-29 | 1990-02-27 | Solartron Electronics, Inc. | Mechanical sensor for high temperature environments |
| US4808549A (en) * | 1988-05-27 | 1989-02-28 | Ford Motor Company | Method for fabricating a silicon force transducer |
| US4849070A (en) * | 1988-09-14 | 1989-07-18 | The United States Of America As Represented By The Secretary Of The Army | Process for fabricating three-dimensional, free-standing microstructures |
| US5095401A (en) * | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
| US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
| US5258097A (en) * | 1992-11-12 | 1993-11-02 | Ford Motor Company | Dry-release method for sacrificial layer microstructure fabrication |
-
1992
- 1992-03-06 US US07/847,690 patent/US5177661A/en not_active Expired - Lifetime
- 1992-12-18 US US07/993,096 patent/US5493470A/en not_active Expired - Lifetime
-
1993
- 1993-03-05 CA CA002130677A patent/CA2130677A1/fr not_active Abandoned
- 1993-03-05 JP JP5515882A patent/JPH07504509A/ja active Pending
- 1993-03-05 EP EP93907203A patent/EP0629286B1/fr not_active Expired - Lifetime
- 1993-03-05 DE DE69303893T patent/DE69303893T2/de not_active Expired - Fee Related
- 1993-03-05 WO PCT/US1993/001952 patent/WO1993018382A1/fr not_active Ceased
- 1993-03-05 AT AT93907203T patent/ATE141008T1/de not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6541833B2 (en) | 1998-08-27 | 2003-04-01 | Infineon Technologies Ag | Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component |
| JP2004513356A (ja) * | 2000-11-10 | 2004-04-30 | ヴァイサラ オーワイジェー | 表面微細加工した絶対圧力センサとその製造方法 |
| JP2013003031A (ja) * | 2011-06-20 | 2013-01-07 | Seiko Epson Corp | 圧力センサーの製造方法、圧力センサーデバイスの製造方法、圧力センサー及び圧力センサーデバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE141008T1 (de) | 1996-08-15 |
| DE69303893T2 (de) | 1996-11-28 |
| US5493470A (en) | 1996-02-20 |
| EP0629286A1 (fr) | 1994-12-21 |
| WO1993018382A1 (fr) | 1993-09-16 |
| CA2130677A1 (fr) | 1993-09-07 |
| DE69303893D1 (de) | 1996-09-05 |
| EP0629286B1 (fr) | 1996-07-31 |
| US5177661A (en) | 1993-01-05 |
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