JPH10307401A - デバイスの製造方法及びレジスト材料 - Google Patents

デバイスの製造方法及びレジスト材料

Info

Publication number: JPH10307401A
Authority: JP; Japan
Prior art keywords: group; polymer; resist material; polycyclic; acid
Prior art date: 1997-03-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP10057221A

Other languages

English (en)

Japanese (ja)

Inventor

Edwin A Chandross

アーサーチャンドロスエドウィン

Michael Fuhrihan Francis

マイケルフーリハンフランシス

Nalamasu Omkaram

ナラマスオムカラム

Reichimanis Eruza

レイチマニスエルザ

Ingolf Walow Thomas

インゴルフワーロウトーマス

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nokia of America Corp

Original Assignee

Lucent Technologies Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-03-07

Filing date

1998-03-09

Publication date

1998-11-17

1998-03-09 Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc

1998-11-17 Publication of JPH10307401A publication Critical patent/JPH10307401A/ja

Status Pending legal-status Critical Current

Links

239000000463 material Substances 0.000 title claims abstract description 100
238000004519 manufacturing process Methods 0.000 title description 13
229920000642 polymer Polymers 0.000 claims abstract description 116
238000000034 method Methods 0.000 claims abstract description 60
238000004090 dissolution Methods 0.000 claims abstract description 57
-1 polycyclic hydrocarbon Chemical class 0.000 claims abstract description 57
239000003112 inhibitor Substances 0.000 claims abstract description 55
230000005855 radiation Effects 0.000 claims abstract description 53
125000001424 substituent group Chemical group 0.000 claims abstract description 32
239000000758 substrate Substances 0.000 claims abstract description 20
125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 11
125000002843 carboxylic acid group Chemical group 0.000 claims abstract description 10
125000000524 functional group Chemical group 0.000 claims abstract description 10
230000001588 bifunctional effect Effects 0.000 claims abstract description 9
125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 5
239000003795 chemical substances by application Substances 0.000 claims abstract description 5
125000000753 cycloalkyl group Chemical group 0.000 claims abstract description 5
150000002430 hydrocarbons Chemical class 0.000 claims abstract 14
229930195733 hydrocarbon Natural products 0.000 claims abstract 7
239000000178 monomer Substances 0.000 claims description 59
239000002253 acid Substances 0.000 claims description 36
125000003367 polycyclic group Chemical group 0.000 claims description 32
239000000203 mixture Substances 0.000 claims description 27
238000006482 condensation reaction Methods 0.000 claims description 24
FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 24
239000007795 chemical reaction product Substances 0.000 claims description 20
SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 18
JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 claims description 18
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 17
125000004432 carbon atom Chemical group C* 0.000 claims description 13
CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 11
229920001897 terpolymer Polymers 0.000 claims description 10
KXGVEGMKQFWNSR-UHFFFAOYSA-N deoxycholic acid Natural products C1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 KXGVEGMKQFWNSR-UHFFFAOYSA-N 0.000 claims description 9
NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 8
BHQCQFFYRZLCQQ-UHFFFAOYSA-N (3alpha,5alpha,7alpha,12alpha)-3,7,12-trihydroxy-cholan-24-oic acid Natural products OC1CC2CC(O)CCC2(C)C2C1C1CCC(C(CCC(O)=O)C)C1(C)C(O)C2 BHQCQFFYRZLCQQ-UHFFFAOYSA-N 0.000 claims description 7
239000004380 Cholic acid Substances 0.000 claims description 7
229960002471 cholic acid Drugs 0.000 claims description 7
235000019416 cholic acid Nutrition 0.000 claims description 7
ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 6
229940099352 cholate Drugs 0.000 claims description 6
125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 6
CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 5
150000001335 aliphatic alkanes Chemical class 0.000 claims description 5
125000002947 alkylene group Chemical group 0.000 claims description 5
229920006029 tetra-polymer Polymers 0.000 claims description 5
150000001983 dialkylethers Chemical class 0.000 claims description 4
150000001924 cycloalkanes Chemical class 0.000 claims description 3
150000001991 dicarboxylic acids Chemical class 0.000 claims description 3
UOCJDOLVGGIYIQ-PBFPGSCMSA-N cefatrizine Chemical group S([C@@H]1[C@@H](C(N1C=1C(O)=O)=O)NC(=O)[C@H](N)C=2C=CC(O)=CC=2)CC=1CSC=1C=NNN=1 UOCJDOLVGGIYIQ-PBFPGSCMSA-N 0.000 claims description 2
125000004356 hydroxy functional group Chemical group O* 0.000 claims 4
230000015572 biosynthetic process Effects 0.000 claims 1
238000010894 electron beam technology Methods 0.000 claims 1
125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
239000004215 Carbon black (E152) Substances 0.000 abstract 2
239000007859 condensation product Substances 0.000 abstract 2
239000000243 solution Substances 0.000 description 22
239000000126 substance Substances 0.000 description 17
YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
239000000654 additive Substances 0.000 description 13
125000002723 alicyclic group Chemical group 0.000 description 13
239000007787 solid Substances 0.000 description 13
235000012431 wafers Nutrition 0.000 description 12
150000001412 amines Chemical class 0.000 description 11
WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
150000001732 carboxylic acid derivatives Chemical group 0.000 description 10
239000002904 solvent Substances 0.000 description 10
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 9
230000000996 additive effect Effects 0.000 description 9
150000001875 compounds Chemical class 0.000 description 9
RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
238000009472 formulation Methods 0.000 description 9
230000003287 optical effect Effects 0.000 description 9
238000004528 spin coating Methods 0.000 description 9
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
229940009976 deoxycholate Drugs 0.000 description 8
239000000047 product Substances 0.000 description 7
VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
238000011161 development Methods 0.000 description 6
125000001183 hydrocarbyl group Chemical group 0.000 description 6
125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
239000010410 layer Substances 0.000 description 6
238000012545 processing Methods 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 6
239000010703 silicon Substances 0.000 description 6
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
239000001257 hydrogen Substances 0.000 description 5
229910052739 hydrogen Inorganic materials 0.000 description 5
238000001459 lithography Methods 0.000 description 5
229920006395 saturated elastomer Polymers 0.000 description 5
ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 5
YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
229910052786 argon Inorganic materials 0.000 description 4
125000003118 aryl group Chemical group 0.000 description 4
150000001805 chlorine compounds Chemical class 0.000 description 4
BHQCQFFYRZLCQQ-OELDTZBJSA-N cholic acid Chemical class C([C@H]1C[C@H]2O)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(O)=O)C)[C@@]2(C)[C@@H](O)C1 BHQCQFFYRZLCQQ-OELDTZBJSA-N 0.000 description 4
150000001925 cycloalkenes Chemical group 0.000 description 4
KXGVEGMKQFWNSR-LLQZFEROSA-N deoxycholic acid Chemical compound C([C@H]1CC2)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(O)=O)C)[C@@]2(C)[C@@H](O)C1 KXGVEGMKQFWNSR-LLQZFEROSA-N 0.000 description 4
238000001914 filtration Methods 0.000 description 4
238000006116 polymerization reaction Methods 0.000 description 4
238000012546 transfer Methods 0.000 description 4
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
238000010521 absorption reaction Methods 0.000 description 3
150000007513 acids Chemical class 0.000 description 3
JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 3
150000001649 bromium compounds Chemical class 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
150000002148 esters Chemical class 0.000 description 3
239000004810 polytetrafluoroethylene Substances 0.000 description 3
229920001343 polytetrafluoroethylene Polymers 0.000 description 3
239000000843 powder Substances 0.000 description 3
238000010526 radical polymerization reaction Methods 0.000 description 3
239000011347 resin Substances 0.000 description 3
229920005989 resin Polymers 0.000 description 3
229930195734 saturated hydrocarbon Natural products 0.000 description 3
238000003756 stirring Methods 0.000 description 3
FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 3
239000004925 Acrylic resin Substances 0.000 description 2
CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
UDIPTWFVPPPURJ-UHFFFAOYSA-M Cyclamate Chemical compound [Na+].[O-]S(=O)(=O)NC1CCCCC1 UDIPTWFVPPPURJ-UHFFFAOYSA-M 0.000 description 2
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
239000007864 aqueous solution Substances 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
238000001816 cooling Methods 0.000 description 2
JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
229960003964 deoxycholic acid Drugs 0.000 description 2
238000013461 design Methods 0.000 description 2
238000005530 etching Methods 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
238000002156 mixing Methods 0.000 description 2
BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
239000003921 oil Substances 0.000 description 2
CTSLXHKWHWQRSH-UHFFFAOYSA-N oxalyl chloride Chemical compound ClC(=O)C(Cl)=O CTSLXHKWHWQRSH-UHFFFAOYSA-N 0.000 description 2
YVOFTMXWTWHRBH-UHFFFAOYSA-N pentanedioyl dichloride Chemical compound ClC(=O)CCCC(Cl)=O YVOFTMXWTWHRBH-UHFFFAOYSA-N 0.000 description 2
238000001020 plasma etching Methods 0.000 description 2
238000001556 precipitation Methods 0.000 description 2
TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 description 1
239000004912 1,5-cyclooctadiene Substances 0.000 description 1
RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
LTMRRSWNXVJMBA-UHFFFAOYSA-N 2,2-diethylpropanedioic acid Chemical compound CCC(CC)(C(O)=O)C(O)=O LTMRRSWNXVJMBA-UHFFFAOYSA-N 0.000 description 1
FWKCXFPQSXNCBW-UHFFFAOYSA-N 2,2-diethylpropanedioyl dichloride Chemical compound CCC(CC)(C(Cl)=O)C(Cl)=O FWKCXFPQSXNCBW-UHFFFAOYSA-N 0.000 description 1
GTZXSBQCNBNWPK-UHFFFAOYSA-N 2-(2-chloro-2-oxoethoxy)acetyl chloride Chemical compound ClC(=O)COCC(Cl)=O GTZXSBQCNBNWPK-UHFFFAOYSA-N 0.000 description 1
OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
JDTUPLBMGDDPJS-UHFFFAOYSA-N 2-methoxy-2-phenylethanol Chemical compound COC(CO)C1=CC=CC=C1 JDTUPLBMGDDPJS-UHFFFAOYSA-N 0.000 description 1
GAYWCADKXYCKCG-UHFFFAOYSA-N 5-pyridin-3-yl-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound N1NC(=S)N=C1C1=CC=CN=C1 GAYWCADKXYCKCG-UHFFFAOYSA-N 0.000 description 1
OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
235000002754 Acer pseudoplatanus Nutrition 0.000 description 1
240000004731 Acer pseudoplatanus Species 0.000 description 1
USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
239000005695 Ammonium acetate Substances 0.000 description 1
QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
235000006485 Platanus occidentalis Nutrition 0.000 description 1
KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
238000005903 acid hydrolysis reaction Methods 0.000 description 1
230000002378 acidificating effect Effects 0.000 description 1
150000001252 acrylic acid derivatives Chemical class 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
239000001361 adipic acid Substances 0.000 description 1
235000011037 adipic acid Nutrition 0.000 description 1
PWAXUOGZOSVGBO-UHFFFAOYSA-N adipoyl chloride Chemical compound ClC(=O)CCCCC(Cl)=O PWAXUOGZOSVGBO-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
125000000217 alkyl group Chemical group 0.000 description 1
125000005233 alkylalcohol group Chemical group 0.000 description 1
229940043376 ammonium acetate Drugs 0.000 description 1
235000019257 ammonium acetate Nutrition 0.000 description 1
SYEOWUNSTUDKGM-UHFFFAOYSA-N beta-methyladipic acid Natural products OC(=O)CC(C)CCC(O)=O SYEOWUNSTUDKGM-UHFFFAOYSA-N 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
JVOIUCTWQIFGNJ-UHFFFAOYSA-M bis(2-tert-butylphenyl)iodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.CC(C)(C)C1=CC=CC=C1[I+]C1=CC=CC=C1C(C)(C)C JVOIUCTWQIFGNJ-UHFFFAOYSA-M 0.000 description 1
DNFSNYQTQMVTOK-UHFFFAOYSA-N bis(4-tert-butylphenyl)iodanium Chemical compound C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 DNFSNYQTQMVTOK-UHFFFAOYSA-N 0.000 description 1
JHPUIEDIXRYPTP-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;chloride Chemical compound [Cl-].C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 JHPUIEDIXRYPTP-UHFFFAOYSA-M 0.000 description 1
KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
150000007942 carboxylates Chemical class 0.000 description 1
150000001735 carboxylic acids Chemical class 0.000 description 1
238000005266 casting Methods 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
229920001577 copolymer Polymers 0.000 description 1
229940109275 cyclamate Drugs 0.000 description 1
239000000625 cyclamic acid and its Na and Ca salt Substances 0.000 description 1
QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
ASJCSAKCMTWGAH-UHFFFAOYSA-N cyclopentane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCC1C(O)=O ASJCSAKCMTWGAH-UHFFFAOYSA-N 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
125000001142 dicarboxylic acid group Chemical group 0.000 description 1
HANKSFAYJLDDKP-UHFFFAOYSA-N dihydrodicyclopentadiene Chemical compound C12CC=CC2C2CCC1C2 HANKSFAYJLDDKP-UHFFFAOYSA-N 0.000 description 1
238000010790 dilution Methods 0.000 description 1
239000012895 dilution Substances 0.000 description 1
ORPDKMPYOLFUBA-UHFFFAOYSA-M diphenyliodanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ORPDKMPYOLFUBA-UHFFFAOYSA-M 0.000 description 1
239000012153 distilled water Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000003912 environmental pollution Methods 0.000 description 1
125000001033 ether group Chemical group 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
238000007687 exposure technique Methods 0.000 description 1
238000000605 extraction Methods 0.000 description 1
230000009477 glass transition Effects 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
239000012528 membrane Substances 0.000 description 1
150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
125000002560 nitrile group Chemical group 0.000 description 1
150000002848 norbornenes Chemical class 0.000 description 1
125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
239000012044 organic layer Substances 0.000 description 1
235000006408 oxalic acid Nutrition 0.000 description 1
238000000059 patterning Methods 0.000 description 1
239000010695 polyglycol Substances 0.000 description 1
229920000151 polyglycol Polymers 0.000 description 1
229920006254 polymer film Polymers 0.000 description 1
SXYFKXOFMCIXQW-UHFFFAOYSA-N propanedioyl dichloride Chemical compound ClC(=O)CC(Cl)=O SXYFKXOFMCIXQW-UHFFFAOYSA-N 0.000 description 1
239000013557 residual solvent Substances 0.000 description 1
150000003839 salts Chemical class 0.000 description 1
239000002002 slurry Substances 0.000 description 1
229960001462 sodium cyclamate Drugs 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
241000894007 species Species 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

Physics & Mathematics (AREA)
Spectroscopy & Molecular Physics (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Architecture (AREA)
Structural Engineering (AREA)
Materials For Photolithography (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

JP10057221A 1997-03-07 1998-03-09 デバイスの製造方法及びレジスト材料 Pending JPH10307401A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US08/813,732 US5879857A (en)	1997-02-21	1997-03-07	Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US08/813732		1997-03-07

Publications (1)

Publication Number	Publication Date
JPH10307401A true JPH10307401A (ja)	1998-11-17

Family

ID=25213230

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP10057221A Pending JPH10307401A (ja)	1997-03-07	1998-03-09	デバイスの製造方法及びレジスト材料

Country Status (5)

Country	Link
US (1)	US5879857A (fr)
EP (1)	EP0880074B1 (fr)
JP (1)	JPH10307401A (fr)
KR (1)	KR100588369B1 (fr)
DE (1)	DE69800033T2 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2001142217A (ja) *	1999-08-31	2001-05-25	Tokyo Ohka Kogyo Co Ltd	感光性基材、それを用いたレジストパターンの形成方法およびポジ型レジスト組成物
US6451501B1 (en)	1999-01-22	2002-09-17	Fujitsu Limited	Acid sensitive copolymer, resist composition and resist pattern forming method
JP2002296779A (ja) *	2001-03-30	2002-10-09	Fuji Photo Film Co Ltd	ポジ型フォトレジスト組成物
JP2012190009A (ja) *	2011-02-25	2012-10-04	Sumitomo Chemical Co Ltd	レジスト組成物及びレジストパターンの製造方法
JP2012226337A (ja) *	2011-04-07	2012-11-15	Sumitomo Chemical Co Ltd	レジスト組成物及びレジストパターンの製造方法
KR20130010861A (ko) *	2011-07-19	2013-01-29	스미또모 가가꾸 가부시키가이샤	레지스트 조성물 및 레지스트 패턴의 제조 방법
WO2014050978A1 (fr) *	2012-09-27	2014-04-03	日本化薬株式会社	Résine d'acide polycarboxylique et composition de résine époxy
JP2017032658A (ja) *	2015-07-29	2017-02-09	信越化学工業株式会社	レジスト材料並びにこれを用いたパターン形成方法

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US5998099A (en) *	1996-03-08	1999-12-07	Lucent Technologies Inc.	Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6103845A (en) *	1996-10-11	2000-08-15	Samsung Electronics Co., Ltd.	Chemically amplified resist polymers
US6071670A (en) *	1996-10-11	2000-06-06	Kabushiki Kaisha Toshiba	Transparent resin, photosensitive composition, and method of forming a pattern
KR100538968B1 (ko) *	1997-02-18	2006-07-11	후지 샤신 필름 가부시기가이샤	포지티브감광성조성물
KR100594768B1 (ko) *	1998-03-12	2006-07-03	후지 샤신 필름 가부시기가이샤	포지티브 감광성 조성물
US6040119A (en) *	1998-03-27	2000-03-21	Industrial Technology Research Institute	Elimination of proximity effect in photoresist
JP3711198B2 (ja) *	1998-04-23	2005-10-26	東京応化工業株式会社	レジストパターンの形成方法
EP0955562A1 (fr) *	1998-05-07	1999-11-10	Siemens Aktiengesellschaft	Réserve chimiquement amplifiée
KR100263906B1 (ko) *	1998-06-02	2000-09-01	윤종용	백본이 환상구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
KR100271420B1 (ko) *	1998-09-23	2001-03-02	박찬구	화학증폭형 양성 포토레지스트 조성물
KR20000056355A (ko) *	1999-02-19	2000-09-15	김영환	고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
SG96547A1 (en) *	1999-03-11	2003-06-16	Ibm	Photoresist compositions with cyclic olefin polymers and additive
US6124074A (en) *	1999-03-11	2000-09-26	International Business Machines Corporation	Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives
CN1267000A (zh) *	1999-03-11	2000-09-20	国际商业机器公司	环状烯烃聚合物和添加剂的光刻胶组合物
US6365322B1 (en)	1999-12-07	2002-04-02	Clariant Finance (Bvi) Limited	Photoresist composition for deep UV radiation
KR100384810B1 (ko) *	2000-02-16	2003-05-22	금호석유화학 주식회사	저분자 화합물 첨가제를 포함하는 화학증폭형 레지스트조성물
EP1130469A1 (fr) *	2000-02-22	2001-09-05	Lucent Technologies Inc.	Matériau pour réserve photosensible et procédé pour fabriquer des objets en utilisant ce matériau
US6251560B1 (en)	2000-05-05	2001-06-26	International Business Machines Corporation	Photoresist compositions with cyclic olefin polymers having lactone moiety
US6627391B1 (en)	2000-08-16	2003-09-30	International Business Machines Corporation	Resist compositions containing lactone additives
US6723488B2 (en)	2001-11-07	2004-04-20	Clariant Finance (Bvi) Ltd	Photoresist composition for deep UV radiation containing an additive
US20030235775A1 (en) *	2002-06-13	2003-12-25	Munirathna Padmanaban	Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
US6756180B2 (en) *	2002-10-22	2004-06-29	International Business Machines Corporation	Cyclic olefin-based resist compositions having improved image stability
US7132218B2 (en) *	2004-03-23	2006-11-07	Sumitomo Chemical Company, Limited	Chemically amplified positive resist composition
US7358029B2 (en) *	2005-09-29	2008-04-15	International Business Machines Corporation	Low activation energy dissolution modification agents for photoresist applications
US20100136477A1 (en) *	2008-12-01	2010-06-03	Ng Edward W	Photosensitive Composition
JP6206379B2 (ja) *	2014-11-25	2017-10-04	信越化学工業株式会社	ポジ型レジスト材料並びにこれを用いたパターン形成方法

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US4666820A (en) *	1983-04-29	1987-05-19	American Telephone And Telegraph Company, At&T Laboratories	Photosensitive element comprising a substrate and an alkaline soluble mixture
US4857435A (en) *	1983-11-01	1989-08-15	Hoechst Celanese Corporation	Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
US5310619A (en) *	1986-06-13	1994-05-10	Microsi, Inc.	Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH0210344A (ja) *	1988-06-29	1990-01-16	Hitachi Ltd	微細パターン形成方法及び像のコントラストの増強方法
US5550004A (en) *	1992-05-06	1996-08-27	Ocg Microelectronic Materials, Inc.	Chemically amplified radiation-sensitive composition
JPH06123970A (ja) *	1992-10-12	1994-05-06	Shin Etsu Chem Co Ltd	ポジ型レジスト材料
US5580694A (en) *	1994-06-27	1996-12-03	International Business Machines Corporation	Photoresist composition with androstane and process for its use
JP2770740B2 (ja) *	1994-07-14	1998-07-02	日本電気株式会社	橋かけ環式アルキル基を有するスルホニウム塩化合物および光酸発生剤
JP3804138B2 (ja) *	1996-02-09	2006-08-02	Ｊｓｒ株式会社	ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物

1997
- 1997-03-07 US US08/813,732 patent/US5879857A/en not_active Expired - Lifetime
1998
- 1998-03-03 EP EP98301562A patent/EP0880074B1/fr not_active Expired - Lifetime
- 1998-03-03 DE DE69800033T patent/DE69800033T2/de not_active Expired - Lifetime
- 1998-03-06 KR KR1019980007413A patent/KR100588369B1/ko not_active Expired - Lifetime
- 1998-03-09 JP JP10057221A patent/JPH10307401A/ja active Pending

Cited By (10)

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Publication number	Priority date	Publication date	Assignee	Title
US6451501B1 (en)	1999-01-22	2002-09-17	Fujitsu Limited	Acid sensitive copolymer, resist composition and resist pattern forming method
JP2001142217A (ja) *	1999-08-31	2001-05-25	Tokyo Ohka Kogyo Co Ltd	感光性基材、それを用いたレジストパターンの形成方法およびポジ型レジスト組成物
JP2002296779A (ja) *	2001-03-30	2002-10-09	Fuji Photo Film Co Ltd	ポジ型フォトレジスト組成物
JP2012190009A (ja) *	2011-02-25	2012-10-04	Sumitomo Chemical Co Ltd	レジスト組成物及びレジストパターンの製造方法
JP2012226337A (ja) *	2011-04-07	2012-11-15	Sumitomo Chemical Co Ltd	レジスト組成物及びレジストパターンの製造方法
KR20130010861A (ko) *	2011-07-19	2013-01-29	스미또모 가가꾸 가부시키가이샤	레지스트 조성물 및 레지스트 패턴의 제조 방법
JP2013041255A (ja) *	2011-07-19	2013-02-28	Sumitomo Chemical Co Ltd	レジスト組成物及びレジストパターンの製造方法
WO2014050978A1 (fr) *	2012-09-27	2014-04-03	日本化薬株式会社	Résine d'acide polycarboxylique et composition de résine époxy
JPWO2014050978A1 (ja) *	2012-09-27	2016-08-22	日本化薬株式会社	多価カルボン酸樹脂およびエポキシ樹脂組成物
JP2017032658A (ja) *	2015-07-29	2017-02-09	信越化学工業株式会社	レジスト材料並びにこれを用いたパターン形成方法

Also Published As

Publication number	Publication date
EP0880074B1 (fr)	1999-10-27
KR19980079960A (ko)	1998-11-25
DE69800033T2 (de)	2000-07-20
DE69800033D1 (de)	1999-12-02
EP0880074A1 (fr)	1998-11-25
KR100588369B1 (ko)	2006-12-07
US5879857A (en)	1999-03-09

Publication	Publication Date	Title
JPH10307401A (ja)	1998-11-17	デバイスの製造方法及びレジスト材料
US6607868B2 (en)	2003-08-19	Photoresist monomers, polymers thereof, and photoresist compositions containing the same
JP3297272B2 (ja)	2002-07-02	レジスト組成物及びレジストパターンの形成方法
JP5687442B2 (ja)	2015-03-18	光酸発生剤およびこれを含むフォトレジスト
US7361447B2 (en)	2008-04-22	Photoresist polymer and photoresist composition containing the same
US20030091927A1 (en)	2003-05-15	Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion
KR100520183B1 (ko)	2005-10-10	두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체
JP2000038416A (ja)	2000-02-08	感光性重合体、溶解抑制剤及びこれらを含む化学増幅型フォトレジスト組成物
JP3793453B2 (ja)	2006-07-05	新規な感酸性重合体及びこれを含有するレジスト組成物
JP2003233190A (ja)	2003-08-22	混合フォト酸レイビル基を有するポリマーおよび該ポリマーを含むフォトレジスト
KR20000047041A (ko)	2000-07-25	신규의 포토레지스트 가교 단량체, 그 중합체 및이를 이용한포토레지스트 조성물
JP3609326B2 (ja)	2005-01-12	感光性重合体及びこれを含む化学増幅型フォトレジスト組成物
JP2001200016A (ja)	2001-07-24	アルキルビニールエーテルの共重合体を含む感光性ポリマー及びこれを含むレジスト組成物
KR20020038283A (ko)	2002-05-23	포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물
US6737217B2 (en)	2004-05-18	Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same
KR100557555B1 (ko)	2006-03-03	불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체
US6806025B2 (en)	2004-10-19	Photoresist monomers, polymers thereof and photoresist compositons containing the same
US20030013037A1 (en)	2003-01-16	Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same
US6627383B2 (en)	2003-09-30	Photoresist monomer comprising bisphenol derivatives and polymers thereof
US20030022100A1 (en)	2003-01-30	Photoresist monomers, polymers thereof and photoresist compositions containing the same
KR20050013780A (ko)	2005-02-05	포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
KR100583096B1 (ko)	2006-05-23	포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물
US6720129B2 (en)	2004-04-13	Maleimide-photoresist polymers containing fluorine and photoresist compositions comprising the same
JP2001255646A (ja)	2001-09-21	デバイスの製造方法及びレジスト材料
KR100682196B1 (ko)	2007-02-12	할로겐 원소를 포함하는 말레이미드계 포토레지스트중합체 및 이를 포함하는 포토레지스트 조성물