JPH11204793A5 - - Google Patents

Info

Publication number
JPH11204793A5
JPH11204793A5 JP1998304413A JP30441398A JPH11204793A5 JP H11204793 A5 JPH11204793 A5 JP H11204793A5 JP 1998304413 A JP1998304413 A JP 1998304413A JP 30441398 A JP30441398 A JP 30441398A JP H11204793 A5 JPH11204793 A5 JP H11204793A5
Authority
JP
Japan
Prior art keywords
nitrogen concentration
peak
sufficient
semiconductor device
polysilicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998304413A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204793A (ja
JP4809510B2 (ja
Filing date
Publication date
Priority claimed from US08/957,692 external-priority patent/US6017808A/en
Application filed filed Critical
Publication of JPH11204793A publication Critical patent/JPH11204793A/ja
Publication of JPH11204793A5 publication Critical patent/JPH11204793A5/ja
Application granted granted Critical
Publication of JP4809510B2 publication Critical patent/JP4809510B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30441398A 1997-10-24 1998-10-26 部分的に作製された金属酸化物半導体デバイスのゲート酸化物を硬化させる方法 Expired - Fee Related JP4809510B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/957,692 US6017808A (en) 1997-10-24 1997-10-24 Nitrogen implanted polysilicon gate for MOSFET gate oxide hardening
US957692 1997-10-24

Publications (3)

Publication Number Publication Date
JPH11204793A JPH11204793A (ja) 1999-07-30
JPH11204793A5 true JPH11204793A5 (2) 2005-12-08
JP4809510B2 JP4809510B2 (ja) 2011-11-09

Family

ID=25499975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30441398A Expired - Fee Related JP4809510B2 (ja) 1997-10-24 1998-10-26 部分的に作製された金属酸化物半導体デバイスのゲート酸化物を硬化させる方法

Country Status (2)

Country Link
US (1) US6017808A (2)
JP (1) JP4809510B2 (2)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3602679B2 (ja) * 1997-02-26 2004-12-15 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6815295B1 (en) * 1997-05-14 2004-11-09 Renesas Technology Corp. Method of manufacturing field effect transistors
US6989319B1 (en) 1998-08-28 2006-01-24 Advanced Micro Devices, Inc. Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devices
US6245652B1 (en) * 1998-09-04 2001-06-12 Advanced Micro Devices, Inc. Method of forming ultra thin gate dielectric for high performance semiconductor devices
US6221724B1 (en) * 1998-11-06 2001-04-24 Advanced Micro Devices, Inc. Method of fabricating an integrated circuit having punch-through suppression
US6342438B2 (en) * 1998-11-06 2002-01-29 Advanced Micro Devices, Inc. Method of manufacturing a dual doped CMOS gate
US6265291B1 (en) 1999-01-04 2001-07-24 Advanced Micro Devices, Inc. Circuit fabrication method which optimizes source/drain contact resistance
US6329670B1 (en) * 1999-04-06 2001-12-11 Micron Technology, Inc. Conductive material for integrated circuit fabrication
JP2001093903A (ja) * 1999-09-24 2001-04-06 Toshiba Corp 半導体装置及びその製造方法
US6277719B1 (en) * 1999-11-15 2001-08-21 Vanguard International Semiconductor Corporation Method for fabricating a low resistance Poly-Si/metal gate
US6559007B1 (en) * 2000-04-06 2003-05-06 Micron Technology, Inc. Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide
US6342437B1 (en) * 2000-06-01 2002-01-29 Micron Technology, Inc. Transistor and method of making the same
US6514825B1 (en) * 2000-06-28 2003-02-04 Conexant Systems, Inc. Technique for reducing 1/f noise in MOSFETs
US6399450B1 (en) 2000-07-05 2002-06-04 Advanced Micro Devices, Inc. Low thermal budget process for manufacturing MOS transistors having elevated source and drain regions
US6458663B1 (en) * 2000-08-17 2002-10-01 Micron Technology, Inc. Masked nitrogen enhanced gate oxide
US6544908B1 (en) 2000-08-30 2003-04-08 Micron Technology, Inc. Ammonia gas passivation on nitride encapsulated devices
TW531803B (en) * 2000-08-31 2003-05-11 Agere Syst Guardian Corp Electronic circuit structure with improved dielectric properties
KR100451036B1 (ko) * 2000-12-08 2004-10-02 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
US6551885B1 (en) 2001-02-09 2003-04-22 Advanced Micro Devices, Inc. Low temperature process for a thin film transistor
US6403434B1 (en) 2001-02-09 2002-06-11 Advanced Micro Devices, Inc. Process for manufacturing MOS transistors having elevated source and drain regions and a high-k gate dielectric
US6756277B1 (en) 2001-02-09 2004-06-29 Advanced Micro Devices, Inc. Replacement gate process for transistors having elevated source and drain regions
US6495437B1 (en) 2001-02-09 2002-12-17 Advanced Micro Devices, Inc. Low temperature process to locally form high-k gate dielectrics
US6787424B1 (en) 2001-02-09 2004-09-07 Advanced Micro Devices, Inc. Fully depleted SOI transistor with elevated source and drain
AU2002347561A1 (en) * 2001-12-20 2003-07-09 Koninklijke Philips Electronics N.V. Method of introducing nitrogen into semiconductor dielectric layers
KR20030054854A (ko) * 2001-12-26 2003-07-02 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100824661B1 (ko) * 2001-12-28 2008-04-25 매그나칩 반도체 유한회사 반도체 소자의 제조방법
DE10234488B4 (de) * 2002-07-29 2007-03-29 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer lokalisierten Implantationsbarriere in einer Polysiliziumleitung
US7314812B2 (en) * 2003-08-28 2008-01-01 Micron Technology, Inc. Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal
US7312125B1 (en) 2004-02-05 2007-12-25 Advanced Micro Devices, Inc. Fully depleted strained semiconductor on insulator transistor and method of making the same
US7271079B2 (en) * 2005-04-06 2007-09-18 International Business Machines Corporation Method of doping a gate electrode of a field effect transistor
JP2007188969A (ja) * 2006-01-11 2007-07-26 Toshiba Corp 半導体装置およびその製造方法
JP2007220755A (ja) * 2006-02-14 2007-08-30 Toshiba Corp 半導体装置及びその製造方法
US7754545B2 (en) * 2007-12-03 2010-07-13 Macronix International Co., Ltd. Semiconductor device and method of fabricating the same
US7736968B2 (en) * 2008-10-27 2010-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing poly-depletion through co-implanting carbon and nitrogen
JP2009071319A (ja) * 2008-10-30 2009-04-02 Renesas Technology Corp 半導体集積回路装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146567A (en) * 1976-05-31 1977-12-06 Nec Corp Production of semiconductor integrated circuits
JPS61191070A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 半導体装置の製造方法
JPH02237024A (ja) * 1988-07-12 1990-09-19 Seiko Epson Corp 半導体装置及びその製造方法
US4914046A (en) * 1989-02-03 1990-04-03 Motorola, Inc. Polycrystalline silicon device electrode and method
JP2889295B2 (ja) * 1989-07-17 1999-05-10 株式会社東芝 半導体装置及びその製造方法
JP2831805B2 (ja) * 1990-05-23 1998-12-02 富士通株式会社 半導体装置の製造方法
JPH04157766A (ja) * 1990-10-20 1992-05-29 Sony Corp シリコンゲートｐチャンネルＭＯＳ半導体装置の製造方法
JPH0629314A (ja) * 1992-07-08 1994-02-04 Hitachi Ltd 半導体装置及びその製造方法
JP3567465B2 (ja) * 1992-08-20 2004-09-22 富士通株式会社 半導体装置の製造方法
JPH06151829A (ja) * 1992-11-02 1994-05-31 Kawasaki Steel Corp 半導体装置の製造方法
US5464792A (en) * 1993-06-07 1995-11-07 Motorola, Inc. Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device
US5393676A (en) * 1993-09-22 1995-02-28 Advanced Micro Devices, Inc. Method of fabricating semiconductor gate electrode with fluorine migration barrier
US5633177A (en) * 1993-11-08 1997-05-27 Advanced Micro Devices, Inc. Method for producing a semiconductor gate conductor having an impurity migration barrier
JPH0823095A (ja) * 1994-07-07 1996-01-23 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JPH08330584A (ja) * 1995-05-31 1996-12-13 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタおよびその製造方法
JPH08330302A (ja) * 1995-06-02 1996-12-13 Sony Corp シリコン酸化膜の形成方法
US5567638A (en) * 1995-06-14 1996-10-22 National Science Council Method for suppressing boron penetration in PMOS with nitridized polysilicon gate
JPH09213942A (ja) * 1996-01-29 1997-08-15 Matsushita Electron Corp 半導体装置およびその製造方法
US5804496A (en) * 1997-01-08 1998-09-08 Advanced Micro Devices Semiconductor device having reduced overlap capacitance and method of manufacture thereof
US5885861A (en) * 1997-05-30 1999-03-23 Advanced Micro Devices, Inc. Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor
US5882974A (en) * 1998-04-08 1999-03-16 Advanced Micro Devices, Inc. High-performance PMOS transistor using a barrier implant in the source-side of the transistor channel

Similar Documents

Publication Publication Date Title
JPH11204793A5 (2)
GB2360631B (en) Trench isolation structure, semiconductor device having the same, and trench isolation method
AU7454501A (en) Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
DE60039535D1 (de) Lichtemittierdende bzw. lichtempfindliche halbleiteranordnung und ihre herstellungsmethode
EP0665557A3 (en) Semiconductor memory device.
ITRM20010289A1 (it) Procedimento ed apparecchiatura per l&#39;assemblaggio del telaio di un veicolo, in particolare per motocicli.
DE69332857D1 (de) Halbleitervorrichtung.
JP2000058258A5 (2)
DE69433543D1 (de) Halbleitervorrichtung.
MXPA03003913A (es) Substrato activable por tension.
ZA200201806B (en) Substituted 2-thio-3,5-dicyano-4-aryl-6-aminopyridines and the use thereof.
EP0588300A3 (en) Semiconductor transistor.
DE69832748D1 (de) Potentialtopf-Halbleiterbauelement
NL1010698A1 (nl) Halfgeleider lichtemitterende inrichting met een GaN-gebaseerde halfgeleiderlaag, werkwijze voor het vervaardigen daarvan en een werkwijze voor het vervaardigen van een GaN-gebaseerde halfgeleiderlaag.
NL1013625A1 (nl) Laterale hoogspanning halfgeleiderinrichting.
JP2001076484A5 (2)
AU2001284817A1 (en) Metal sulfide-oxide semiconductor transistor devices
DE59805430D1 (de) Halbleiter-strombegrenzer
ITTO20010845A0 (it) Dispositivo di bloccaggio per veicolo.
TR199800907A3 (tr) Gaz-sivi temasi saglayan tertibat.
NL194456B (nl) Leidgestel voor gebruik bij de vervaardiging van halfgeleiderinrichtingen, voorzien van eerste en tweede positioneerorganen.
EP0615963A3 (en) Sintered body of silicon nitride.
IT1318257B1 (it) Lead-frame per dispositivi a semiconduttore.
TW334632B (en) Field effective semiconductor
DE69609637D1 (de) Halbleiter-Quantentopfstruktur und Halbleiteranordnung, die dieselbe Struktur enthält