JPS51115770A - Annealing method after ion injection - Google Patents

Annealing method after ion injection

Info

Publication number
JPS51115770A
JPS51115770A JP50041030A JP4103075A JPS51115770A JP S51115770 A JPS51115770 A JP S51115770A JP 50041030 A JP50041030 A JP 50041030A JP 4103075 A JP4103075 A JP 4103075A JP S51115770 A JPS51115770 A JP S51115770A
Authority
JP
Japan
Prior art keywords
ion injection
annealing method
injection
rid
eliminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50041030A
Other languages
Japanese (ja)
Other versions
JPS5740648B2 (en
Inventor
Yasuo Tanii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP50041030A priority Critical patent/JPS51115770A/en
Publication of JPS51115770A publication Critical patent/JPS51115770A/en
Publication of JPS5740648B2 publication Critical patent/JPS5740648B2/ja
Granted legal-status Critical Current

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  • Inorganic Insulating Materials (AREA)

Abstract

PURPOSE: To eliminate the need to cover the ion injection surface during the annealing process performed after the injection and also to get rid of both the heat disintegration of the semi-conductor material and the effect of the impure atom dispersion.
COPYRIGHT: (C)1976,JPO&Japio
JP50041030A 1975-04-03 1975-04-03 Annealing method after ion injection Granted JPS51115770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50041030A JPS51115770A (en) 1975-04-03 1975-04-03 Annealing method after ion injection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50041030A JPS51115770A (en) 1975-04-03 1975-04-03 Annealing method after ion injection

Publications (2)

Publication Number Publication Date
JPS51115770A true JPS51115770A (en) 1976-10-12
JPS5740648B2 JPS5740648B2 (en) 1982-08-28

Family

ID=12596989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50041030A Granted JPS51115770A (en) 1975-04-03 1975-04-03 Annealing method after ion injection

Country Status (1)

Country Link
JP (1) JPS51115770A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556637A (en) * 1978-10-20 1980-04-25 Matsushita Electric Ind Co Ltd Preparation of semiconductor device
JPS5873112A (en) * 1981-10-28 1983-05-02 Nippon Hoso Kyokai <Nhk> Laser annealing
JPS60239030A (en) * 1984-05-11 1985-11-27 Sumitomo Electric Ind Ltd Annealing method of compound semiconductor
JPS6211225A (en) * 1986-07-18 1987-01-20 Sony Corp Heat treatment method for iii-v compound semiconductor
JPH05129203A (en) * 1991-11-07 1993-05-25 Japan Steel Works Ltd:The Method of forming epitaxial thin film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556637A (en) * 1978-10-20 1980-04-25 Matsushita Electric Ind Co Ltd Preparation of semiconductor device
JPS5873112A (en) * 1981-10-28 1983-05-02 Nippon Hoso Kyokai <Nhk> Laser annealing
JPS60239030A (en) * 1984-05-11 1985-11-27 Sumitomo Electric Ind Ltd Annealing method of compound semiconductor
JPS6211225A (en) * 1986-07-18 1987-01-20 Sony Corp Heat treatment method for iii-v compound semiconductor
JPH05129203A (en) * 1991-11-07 1993-05-25 Japan Steel Works Ltd:The Method of forming epitaxial thin film

Also Published As

Publication number Publication date
JPS5740648B2 (en) 1982-08-28

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